TO126FM Search Results

diode BB102

Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

Hitachi DSA00164

Contextual Info: 2SC5025 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 1.2 GHz typ • Low output capacitance Cob = 5.0 pF typ Outline TO-126FM 1 2 1. Emitter 2. Collector 3. Base 3 2SC5025 Absolute Maximum Ratings Ta = 25°C

Hitachi DSA00164

Contextual Info: 2SC5120 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 500 MHz typ • High voltage and low output capacitance VCEO = 150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier

Contextual Info: 2SD2491, 2SD2492 Silicon NPN Epitaxial HITACHI Application Low frequency high voltage amplifier Features • Isolated package TO-126FM Outline 2SD2491, 2SD2492 Absolute Maximum Ratings Ta = 25 °C Ratings Item Symbol Collector to base voltage 2SD2491 2SD2492

2SD1609

Abstract: 2SD1610 2SD2491 2SD2492 TO-126-F Hitachi DSA00397
Contextual Info: 2SD2491, 2SD2492 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Features • Isolated package TO-126FM Outline TO-126FM 1 2 1. Emitter 2. Collector 3. Base 3 2SD2491, 2SD2492 Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol

IC51-128

Abstract: transistor fpq 630 PC-68 TTP-48DF OF IC 7421 Enplas fpq Enplas PT740 AB am fm radio Hitachi DSAUTAZ005
Contextual Info: Hitachi Semiconductor Package Data Book Introduction Contents Section 1 Introduction of Packages 1.1 Types of Packages and Advantages 1.2 IC Package Name and Code Indication 1.3 Method of Indicating IC Package Dimensions 1.4 Lineups in Terms of Shapes and Materials

3SK238

Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

HITACHI SMD TRANSISTORS

Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,

Contextual Info: H ITACH I 2SC5390 Silicon NPN Epitaxial High Frequency Amplifier HITACHI Features • Excellent high frequency characteristics fT = 1.4GHz typ. • Low output capacitance Cob = 2.4 pF (typ.) • Isolated package TO-126FM Outline TO-126FM I 1. Emitter 2. Collector

Contextual Info: HITACHI 2SC4828-Silicon NPN Triple Diffused High Voltage Amplifier, TV Video Output Absolute Maximum Ratings Ta = 25 °C Item TO-126FM Symbol Rating Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

2SC4828

Contextual Info: 2SC4828 Silicon NPN Triple Diffused High Voltage Amplifier, TV Video Output Absolute Maximum Ratings Ta = 25°C Item TO-126FM Symbol Rating Unit ————————————————————– Collector to base voltage VCBO 300 V ————————————————————–

HT 1200-4

Abstract: YAMAICHI ic234 PT740 AB TSSOP YAMAICHI SOCKET FP-20-0.65-01 IC51-1444-1354-7 PT817 Enplas drawings IC51-2084-1052-11 IC 7418 IC51-0242-1341
Contextual Info: Hitachi Semiconductor Package Data Book ADE–410–001B 3rd Edition March/97 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher functional

HT 1200-4

Abstract: IC51-2084-1052-11 IC51-0242-1341 YAMAICHI ic234 transistor fpq 630 IC51-0404-1511 fpq-144-0.5-03 648-0482211-A01 IC189 Series Open Top SOP, SSOP, TSOP Type I a HLQFP 176 Package drawing
Contextual Info: Hitachi Semiconductor Package Data Book ADE–410–001C 4th Edition March/98 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher

2SK1778

Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

hitachi ha 250

Contextual Info: 2SC4828 Silicon NPN Triple Diffused HITACHI Application High voltage amplifier. TV Video output Outline TO-126FM 1 1 Emitter 2 Collector 3 Base i '3 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit C ollector to em itter voltage VCBQ VCEQ Emitter to base voltage

2sc5024

Abstract: Hitachi 2SA Hitachi DSA00164
Contextual Info: 2SC5024 Silicon NPN Epitaxial Application High frequency amplifier Features • • • • Excellent high frequency characteristics fT = 300 MHz typ High breakdown voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ Suitable for wide band video amplifier

Hitachi DSA00164

Contextual Info: 2SC5023 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 1000 MHz typ • High breakdown voltage and low output capacitance VCEO = 100 V, Cob = 4.5 pF typ • Suitable for wide band video amplifier

Hitachi DSA00164

Contextual Info: 2SC4828 Silicon NPN Triple Diffused Application High voltage amplifier, TV Video output Outline TO-126FM 1 2 1. Emitter 2. Collector 3. Base 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage

PT740 AB

Abstract: PM351 transistor 9726 126 EDR-7313 ED-7402 texas instruments data guide manual Hitachi DSAUTAZ006 DO-35 land pattern Silicon Point Contact Mixer Diodes ED-7311
Contextual Info: Hitachi Semiconductor Package Data Book ADE–410–001H 9th Edition March/2001 Semiconductor & Integrated Circuits Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher

Contextual Info: I HITACHI 2SA1889 Silicon PNP Epitaxial Application TO-126FM High frequency amplifier Features f 'W • Excellent high frequency characteristics f j = 300 M Hz typ • High voltage and low output capacitance v ceo t = - 200 v > Cob = 5 0 pf typ 2 • Suitable for wide band video amplifier

5252 F 1108

Abstract: 4550J TO220FM 12015C 5252 F 1104 0345A msp18 E1113 K2613 SP1211
Contextual Info: B 2 S A series P 5 5 6 8 8 8 6 6 6 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 6 9 5 5 5 5 5 5 5 5 5 6 5 5 8 8 8 6 P*c*^aeoda TO-92 TO-92 TO-92 TO-126M TO-126M TO-126M TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

Contextual Info: 2SA1889 Silicon PNP Epitaxial HITACHI Application High frequency amplifier Features • Excellent high frequency characteristics fT= 300 MHz typ • High voltage and low output capacitance V CE0 = -2 0 0 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier