SOURCEGATE Search Results

HP-4921A

Abstract: SGMB451616S102 SGMB451616S151 SGMB451616S600 SGMB451616S601 SGMB451616S800 SGMB451616S851 4921a
Contextual Info: SOURCEGATE MULTILAYER FERRITE CHIP BEADS TECHNOLOGIES Your Gateway To A Reliable Source SGMB451616 1806 TYPE Electrical Characteristics Impedance (Ω)±25% [100MHz] SGMB451616S600 60 SGMB451616S800 80 SGMB451616S151 150 SGMB451616S601 600 SGMB451616S851

HP-4921A

Abstract: SGMB201209S121 SGMB201209 SGMB201209S101 SGMB201209S110 SGMB201209S151 SGMB201209S170 SGMB201209S260 SGMB201209S310 SGMB201209S520
Contextual Info: SOURCEGATE MULTILAYER FERRITE CHIP BEADS TECHNOLOGIES Your Gateway To A Reliable Source SGMB201209 0805 TYPE Electrical Characteristics Impedance (Ω)±25% [100MHz] SGMB201209S110 11 SGMB201209S170 17 SGMB201209S260 26 SGMB201209S310 31 SGMB201209S520

Low Capacitance MOS FET 13005

Abstract: BF1205C
Contextual Info: BF1205C Dual N-channel dual gate MOS-FET Rev. 02 — 15 August 2006 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1

LM373

Abstract: MC1303L LM566 "direct replacement" transistor BD 540 LYS MFC6030 LM566 equivalent LM3039 SN72558P LM370 SN72741P
Contextual Info: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communica­ tions and consumer-oriented circuits to precision instrumentation and computer designs.

J111 national

Abstract: J112 J113 25CC J111 MMBFJ111 MMBFJ112 MMBFJ113 MARK 6C SOT-23 k20a
Contextual Info: S e m i c o n d u c t o r " J111 J112 J113 G MMBFJ111 MMBFJ112 MMBFJ113 T O -9 2 D M ark: 6 P / 6 R / 6 S N-Channel Switch T his device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Proce ss 51.

MIXER GHz

Abstract: B82412-A3820-K FERRITE TOROID CF750
Contextual Info: CF 750 - 250 MHz to 1900 MHz Up-Converter Application Note No. 044 CF 750 is a GaAs-MMIC for amplifier and mixer applications for frequencies up to 3 GHz. It is suitable for use in handheld equipment with low power consumption requirements. Since the CF 750 is not matched to 50 Ω the following design rules have

04NG

Abstract: 48 04NG 4804NG 369D
Contextual Info: NTD4804NA Advance Information Power MOSFET 25 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices

MIXER GHz

Abstract: B82412-A3221-K CF750
Contextual Info: CF 750 - 1500 MHz to 130 MHz Down-Converter Application Note No. 042 CF 750 is a GaAs-MMIC for amplifier and mixer applications for frequencies up to 3 GHz. It is suitable for use in handheld equipment with low power consumption requirements. Since the CF 750 is not matched to 50 Ω the following design rules have

2N3819 equivalent

Abstract: MPF111 2N3821-4 2N5045 2N3819 2N3921-2 2N4220-2 2N4223-24 2N5457-9 2N5556-58
Contextual Info: designed fo r B . S ilic o n ix Performance Curves NRL See Section 5 • G eneral Purpose Am plifiers MPF109 n-channel JFET B E N E F IT S • Low Cost ■ Analog Switches • Autom atic Insertion Package TO -92 See Section 7 A B S O L U T E M AXIM UM R A T IN G S 25°C

CP1L

Abstract: pwm 001 MC33395 CP2H HSE2 32-PIN 33395T cp1h 98ARH99137A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MC33395 Rev 4.0, 2/2007 Three-Phase Gate Driver IC 33395 33395T The 33395 simplifies the design of high-power BLDC motor control design by combining the gate drive, charge pump, current sense, and protection circuitry necessary to drive a three-phase bridge

Transistor J310

Abstract: J309 J310 J310 applications CBVK741B019 F63TNR MMBFJ309 MMBFJ310 PN2222N J310 Application Note
Contextual Info: MMBFJ309 MMBFJ310 J309 J310 G D G S TO-92 SOT-23 D S Mark: 6U / 6T N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.

CP1L

Abstract: HSE2
Contextual Info: Freescale Semiconductor Technical Data MC33395 Rev 3.0, 11/2005 Document order number: Three-Phase Gate Driver IC 33395 33395T The 33395 simplifies the design of high-power BLDC motor control design by combining the gate drive, charge pump, current sense, and

Contextual Info: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 3 — 14 November 2014 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are

2N5653

Abstract: 2N5654
Contextual Info: 2N5654 2N5653 s »channel JFETs designed for S ilic o n ix . Performance Curves NC See Section 5 • Analog Switches ■ Commutators ■ Choppers B E N E F IT S • Low Cost • Automatic Insertion Package • High Speed tQisi + t Q F F = 24 ns Max 2N5653

2N5640 equivalent

Abstract: 2N5640 2N5638 2N5639 2N5638 equivalent 2N5638-40 J111 J111 equivalent
Contextual Info: caloric N-Channel JFET Switch CORPORATION 2N5638- 2N5640 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified Drain-Source Drain-Gate Voltage .30V

ELEVATOR LOGIC CONTROL PLC

Abstract: encoder 80058 80058 ENCODER VMIVME 2540 ERNI rel 14 timer rel 14 ERNI rel 14 a1 5.5 erni PLC ELEVATOR CONTROL VMIVME-2540 M68030
Contextual Info: VMIVME-2540 Intelligent Counter/Controller Product Manual 256 880-0444 w 12090 South Memorial Parkway Huntsville, Alabama 35803-3308, USA (800) 322-3616 w Fax: (256) 882-0859 500-002540-000 Rev. N (256) 880-0444 w 12090 South Memorial Parkway Huntsville, Alabama 35803-3308, USA

Contextual Info: BF1205C Dual N-channel dual gate MOS-FET Rev. 3 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1

BF1208

Abstract: transistor BF1208 Dual N-channel dual gate MOSFET MARKING CODE 2l mosfet 7810
Contextual Info: 66 SO T6 BF1208 Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1

hg1b

Abstract: marking 822 sot363
Contextual Info: BF1207 Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current

ua309

Abstract: J310 equivalent J310 J310G J309-J310 J309 MMBFJ309 MMBFJ310 fr 309 625 GFG
Contextual Info: J309 / J310 / MMBFJ309 / MMBFJ310 MMBFJ309 MMBFJ310 J309 J310 G S G S TO-92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and

J108

Abstract: MMBFJ108
Contextual Info: N-Channel Switch 3 • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. 2 1 TO-92 1. Drain 2. Source 3. Gate 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted

SST174 P04

Abstract: J177 j174 EQUIVALENT J176 SST177 2N5114 J174 J175 SST174 SST175
Contextual Info: P-Channel JFET Switch CORPORATION J174 – J177 / SST174 – SST177 FEATURES • Low Insertion Loss • No Offset or Error Generated By Closed Switch Resistive - Purely - High Isolation Resistance From Driver • Short Sample and Hold Aperture Time • Fast Switching

VCR2N

Abstract: jfet transistor for VCR AN105
Contextual Info: VCR2N/4N/7N Vishay Siliconix JFET Voltage-Controlled Resistors PRODUCT SUMMARY Part Number VGS off Max (V) V(BR)GSS Min (V) rDS(on) Max (W) VCR2N −7 −25 60 VCR4N −7 −25 600 VCR7N −5 −25 8000 FEATURES BENEFITS APPLICATIONS D Continuous Voltage-Controlled

A1668

Abstract: r50 transistor 00-B
Contextual Info: TMF3202Z Semiconductor Dual Gate MOSFET □ Description SOT-343 Unit in mm The TMF3202Z is an enhancement type N-channel field-effect transistor. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good crossmodulation performance during AGC. Integrated diodes between