SOT429 Search Results

Contextual Info: TO -24 7 BYV74W-400 Dual ultrafast power diode 16 July 2013 Product data sheet 1. General description Dual ultrafast power diode in a SOT429 3-lead TO-247 plastic package. 2. Features and benefits • • • • • Very low on-state loss Fast switching

BYV72EW-200

Contextual Info: TO -24 7 BYV72EW-200 Dual ultrafast power diode 16 July 2013 Product data sheet 1. General description Dual ultrafast power diode in a SOT429 3-lead TO-247 plastic package. 2. Features and benefits • • • • • • Very low on-state loss Fast switching

Contextual Info: TO -24 7 BYV415W-600P Dual ultrafast power diode 26 August 2014 Product data sheet 1. General description Dual ultrafast power diode in a SOT429 3-lead TO-247 plastic package. 2. Features and benefits • • • • Very low on-state loss Fast switching

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUW13W; BUW13AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. APPLICATIONS • Converters • Inverters • Switching regulators

BYV72EW-200

Contextual Info: TO -24 7 BYV72EW-200 Dual ultrafast power diode 24 July 2013 Product data sheet 1. General description Dual ultrafast power diode in a SOT429 3-lead TO-247 plastic package. 2. Features and benefits • • • • • • Very low on-state loss Fast switching

power diode

Abstract: Power Diodes Diodes diode schottky 600v high power diode axial power diode package BYD1100 BYM99 BYV1100 BYV2100
Contextual Info: Philips Semiconductors Power Diodes New Products Philips Semiconductors is working intensively to bring new Power Diode products to the market. These are the products and technologies which appear for the first time in this data handbook:- schottky and ultrafast epitaxial rectifiers in the SOT429

BUT11A1

Abstract: Power Bipolar Transistors bu2708dx BU2725DX BU1508AX BU4506AX BU2532 BU4506AF BU2720DX BU2527
Contextual Info: LEADED PACKAGES VcESM V 1500 tf lc lc (DC) sat. max. (A) 2.5 (A) 2 fas) 0.9 S0T82 S0T78 (T0220AB) S0T186A S0T186 (isolated S0T199 T0220AB) BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF S0T399 (TOP3D) SOT429 (T0247) SOT430 (TOP3L) TYPICAL APPLICATIONS

Contextual Info: MOUNTING AND SOLDERING INSTRUCTIONS page TO126/SOT82 768 SOT186/A; SOT78 T0220AB 772 SOT199/SOT429 (TC>247)/SOT339 (TOP3D) 776 Philips Semiconductors Power Bipolar Transistors Mounting and Soldering GENERAL DATA AND INSTRUCTIONS FOR T0126/S0T82 When the driven nut or screw is in direct contact with a

SOT429

Contextual Info: Package outline Philips Semiconductors Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247 SOT429 A E A1 P q D L1 Q L 1 2 3 b2 c b1 b e e 10 20 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 b b1 b2 c

Contextual Info: TO -24 7 BYC30WT-600P Hyperfast power diode 10 February 2014 Product data sheet 1. General description Hyperfast power diode in a SOT429 3-lead TO247 plastic package. 2. Features and benefits • • • • Low leakage current Low thermal resistance Low reverse recovery current

Power Bipolar Transistors

Contextual Info: PACKAGE OUTLINES Page SOT78 T0-220AB SOT82 SOT186(10-220) S O U 86A (Isolated TO-220AB) SOT199 SOT399 (TOP3D) 754 755 756 757 758 759 SOT429 (TO-247) SOT43Q (TOP3L) 760 761 Philips Semiconductors Power Bipolar Transistors Package outlines Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-22QAB

Power Bipolar Transistors

Abstract: SOT430 transistors A1 757 sot199 to220 5 lead plastic
Contextual Info: PACKAGE OUTLINES SOT78 TO-220AB SOT82 SOT186(TO-220) SOT186A (Isolated TO-220AB) SOT199 SOT399 (TOP3D) SOT429 (TO-247) SOT430 (TOP3L) Page 754 755 756 757 758 759 760 761 Philips Semiconductors Power Bipolar Transistors Package outlines Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

12aw

Abstract: transistor C 548 B Philips b872 BUW12A transistor vc 548
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. APPLICATIONS • Converters • Inverters • Switching regulators

PHW7N60

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor PINNING - SOT429 T0247 PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance Id F*tol RdS(ON) PIN CONFIGURATION MAX. UNIT 600 7 147 1.2

Contextual Info: Package outline Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247 SOT429 E A ø A1 p P2 D2 q E2 D D1 E3 E1 L1 Q b1 b2 L b e c 20 mm scale Dimensions mm are the original dimensions Unit(1) A A1 b b1 b2 c D D1 D2 E

BUT11APX equivalent

Abstract: BUT11A1 equivalent BU2725DX BU2527 BU506D, BU1506DX, BU2506DF BUT11APX BU4522AX BU2506DF equivalent bu2520dx BU2527DX
Contextual Info: DISCRETE SEMICONDUCTORS Selection guide Power Bipolar Transistors 1998 Dec 16 SOT82 SOT78 TO220AB SOT186 BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF SOT186A (isolated TO220AB) SOT199 SOT399 (TOP3D) SOT429 (TO247) SOT430 (TOP3L) TYPICAL APPLICATIONS

SOT429

Contextual Info: PDF: 1999 Aug 05 Philips Semiconductors Package outline Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247 SOT429 α E P A A1 β q S R D Y L1 1 Q b2 L 1 2 3 c w M b b1 e e 10 20 mm scale DIMENSIONS (mm are the original dimensions)

Contextual Info: MOUNTING INSTRUCTIONS page TO126/SOT82 616 SOT186/A; T0220AB 620 SOT199/SOT429/TOP3D 624 Philips Semiconductors Mounting Instructions T0126/S0T82 GENERAL DATA AND INSTRUCTIONS General rules 1. Fasten the device to the heatsink before soldering the leads. 2. Avoid stress to the leads.

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUW11W; BUW11 AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. o APPLICATIONS _ o • Converters • Inverters • Switching regulators

BUT11APX equivalent

Abstract: diode BY229 BUT11APX BU4508DX plasma tv ic BU2720DX BUT11APX-1200 BU4507DX BU4508DX equivalent BU2520DF
Contextual Info: Bipolar power diodes and transistors for TV Understanding PFC - TV applications What is Power Factor Correction PFC Ñ It can be defined as the reduction of the harmonic content, and/or the aligning of the phase angle of incoming current Ñ PFC is required to reduce disturbance on the AC distribution

FREDFET

Abstract: PHP6N60 BUK457-500B PHB8ND50E PHP8N50 PHP8ND50E PHW8ND50E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance

PHB13N40E

Abstract: PHP13N40E PHW13N40E
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP13N40E, PHB13N40E, PHW13N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance

BUW12A

Abstract: BUW12AW BUW12W MGB927
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUW12W; BUW12AW Silicon diffused power transistors Product specification Supersedes data of December 1991 File under Discrete Semiconductors, SC06 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors

BUK436-800A

Abstract: BUK436-800B BUK456-800A
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,