SOT143 MARKING CODE G2 Search Results

c639

Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

sot143 marking code G2

Abstract: G2 MARKING CODE 5 PIN
Contextual Info: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1005

Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!

BF1009SW

Abstract: BF1009 marking code g2s
Contextual Info: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!

BFP181

Contextual Info: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!

BF1009SW

Contextual Info: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BF2030. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain G2 G1 AGC RF Input RG1 RF Output + DC GND VGG

Contextual Info: BF2030. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V Drain AGC RF Input RG1 G2 G1 RF Output + DC GND VGG ESD Electrostatic discharge sensitive device, observe handling precaution!

sot143 marking code G2

Abstract: DIN 6784 BF2030 BF2030R BF2030W BFP181 BFP181R BGA420 E6327
Contextual Info: BF2030. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1005SR

Contextual Info: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SLVE2.8 Preliminary Data Low Voltage TVS Diode Array PRELIMINARY & SLVG2.8 TEL:805-498-2111 FAX:805-498-3804 DESCRIPTION FEATURES: • • The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor components which are connected to data and

E6327

Abstract: DIN 6784 BF2040 BF2040R BF2040W BFP181 BGA420 sot143 marking code G2 p 1S marking SOT143
Contextual Info: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040

SEMTECH MARKING sot-143

Contextual Info: SLVE2.8 Preliminary Data Low Voltage TVS Diode Array ¡ n = [] & SLVG2.8 TEL805-498-2111 FAX:805-498-3804 PRELIMINARY DESCRIPTION FEATURES: The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor components which are connected to data and

BF998B-GS08

Abstract: NATIONAL SEMICONDUCTOR MARKING CODE sot-143 sot143 code marking MS BF998A BF998A-GS08 BF998 VISHAY application BF998 BF998RAW-GS08
Contextual Info: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance

Contextual Info: Preliminary Data Low Voltage TVS Diode Array SLVE2.8 SLVE3.3 SLVG2.8 SLVG3.3 TEL: 805-498-2111 PRELIMINARY DESCRIPTION FA X: 805-498-3804 FEATURES: The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor components which are connected to data and

marking code abc

Abstract: marking code ga sot 363 G4 SOT-363 Marking G4 SOT363 sot-23 MARKING GU 5968-7701E marking code tc sot 363 389C 389E G3 SOT-23
Contextual Info: Surface Mount RF PIN Switch Diodes Technical Data HSMP-389x Series HSMP-489x Series Features • Switching – Low Capacitance – Low Resistance at Low Current • Low Failure in Time FIT Rate[1] • Matched Diodes for Consistent Performance • Better Thermal

sot-23 MARKING GU

Abstract: Marking Code ABC marking code ga sot 363 marking G5 SC-70 marking CODE GA sot363 Marking Code m sc70-6 389V sot marking code G4 jedec SC-70-6 package marking code T1
Contextual Info: HSMP-389x Series, HSMP-489x Series Surface Mount RF PIN Switch Diodes Data Sheet Description/Applications Features The HSMP-389x series is ­optimized for switching applications where low resistance at low current and low capacitance are required. The HSMP-489x series products

389C

Abstract: 389E HSMP-389L HSMP-389T marking CODE GA sot363 sot-23 MARKING CODE 54 sot-23 MARKING GU sot marking code G4 Marking I09 sot23 marking code g5
Contextual Info: HSMP-389x Series, HSMP-489x Series Surface Mount RF PIN Switch Diodes Data Sheet Description/Applications Features The HSMP-389x series is ­optimized for switching applications where low resistance at low current and low capacitance are required. The HSMP-489x series products

hsmp-3800

Abstract: marking l4 sot-143
Contextual Info: Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface Mount SOT-23 and SOT-143 Packages

VPT CONNECTORS

Abstract: marking 5a TVS SOT143
Contextual Info: SLVE2.8 & Low Voltage TVS Diode for ESD and Latch-Up Protection SLVG2.8 Revised - February 17, 1999 DESCRIPTION The SLV series of transient voltage suppressors are designed to protect low voltage semiconductor components which are connected to data and transmission lines from transients caused by