SOT 223 FAIRCHILD Search Results

FQT13N60

Contextual Info: SOT-223 Tape and Reel Data SOT-223 Packaging Configuration: Figure 1.0 Packaging Description: SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated

F852 transistor

Abstract: F852 CBVK741B019 F63TNR PN2222A
Contextual Info: SOT-223 Tape and Reel Data SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated

CBVK741B019

Abstract: F63TNR F852 PN2222A corrugated box spec
Contextual Info: SOT-223 Tape and Reel Data SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Antistatic Cover Tape SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated

sot-223 package dimensions

Abstract: sot223 SOT223 Package sot223 weight sot 223 fairchild
Contextual Info: SOT-223 Package Dimensions SOT-223 FS PKG Code 47 1:1 Scale 1:1 on letter size paper Part Weight per unit (gram): 0.1246 2000 Fairchild Semiconductor International September 1999, Rev. C

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223

Schottky Diode SOT-89

Abstract: MBRL130 MBRL140 BAT54S SOT-23 CMR1U-02M SOT-89 MBRL120 MURS120 SMA BCX53 Rohm DPAK
Contextual Info: Competitive Part List Central Semiconductor Corp. 1. SOT-89 / SOT-223 Small Signal Transistors Our primary competition on the following devices is Philips, Siemens and Motorola. Competitor P/N BC868 BC869 BCP28 BCP29 BCP51, -10, -16 BCP52, -10, -16 BCP53, -10, -16

P0210

Abstract: 395n bf99 mpsa92 MPSA92 Fairchild
Contextual Info: MPSA92 MMBTA92 SOT-23 PZTA92 V B SOT-223 M ark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol ia Parameter Value Units VcEO Collector-Emitter Voltage 300

MMBT3906

Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A

PN2222A

Abstract: fairchild 1P MMBT2222A PZT2222A PN2222 pn222
Contextual Info: PN2222A / MMBT2222A / PZT2222A NPN General Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 SOT-223

Contextual Info: MPSA63 / MMBTA63 / PZTA63 PNP Darlington Transistor Features • This device is designed for applications requiring extremely high current gain at currents to 800 mA. • Sourced from Process 61. MMBTA63 MPSA63 PZTA63 C C E E TO-92 SOT-23 SOT-223 B Mark:2U

Contextual Info: MPSA06 / MMBTA06 / PZTA06 NPN General Purpose Amplifier Features • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from Process 33. MMBTA06 MPSA06 PZTA06 C C E E TO-92 SOT-23 SOT-223 B Mark:1G

Contextual Info: PN2222A / MMBT2222A / PZT2222A NPN General Purpose Amplifier Features • This device is for use as a medium power amplifierand switch requiring collector currents up to 500mA. • Sourced from process 19. MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 SOT-223

2n3906

Abstract: MMBT3906
Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A

SOT-23 EBC

Abstract: MPSA63 MMBTA63 PZTA63 Fairchild Semiconductor - Process
Contextual Info: MPSA63 / MMBTA63 / PZTA63 PNP Darlington Transistor Features • This device is designed for applications requiring extremely high current gain at currents to 800 mA. • Sourced from Process 61. MMBTA63 MPSA63 PZTA63 C C E E TO-92 SOT-23 SOT-223 B Mark:2U

Contextual Info: MMBTA92 / PZTA92 PNP High-Voltage Amplifier Description This device is designed for high-voltage driver applications. Sourced from process 76. C C E E SOT-23 Mark: 2D C SOT-223 B Figure 1. MMBTA92 Device Package B Figure 2. PZTA92 Device Package Ordering Information

MC4044P

Abstract: 7660CPA MC14411P 8038ccpd RC4151N ultrasonic proximity detector LM35CZ ICL7660SCPA 344C mc145151p
Contextual Info: Linear, Sensors & Digital Pots TO-5/TO-52 TO-92 TO-220 TO-252 TO-263 DD DIP Call us to see if you can save 10-20%. SOIC & SOP SOT-23 SOT-223 Manufacturer Cross Reference Table Manufacturer Analog Devices Anachip Code Manufacturer Code Manufacturer ADI Fairchild Semiconductor FSC Maxim Corporation

ic 3843 datasheet

Abstract: ua 3843 MMBTA06 MPSA06 PZTA06
Contextual Info: MPSA06 MMBTA06 PZTA06 C C E E C BE TO-92 SOT-23 C B B SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol

Mmbt3906

Abstract: 2N3906
Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 B Mark:2A EBC C SOT-223

MPSa56 equivalent

Abstract: MMBTA56 MPSA56 PZTA56 C-20-50
Contextual Info: MPSA56 MMBTA56 PZTA56 C C E E C BE TO-92 SOT-23 C B B SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings* Symbol

TRANSISTOR A64

Abstract: a64 TRANSISTOR sot23 a64 MMBTA64 MPSA64 PZTA64 darlington sot23 pnp a64 sot
Contextual Info: MPSA64 MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol

TRANSISTOR A63

Abstract: sot23 A63 a63 TRANSISTOR MPSA63 MMBTA63 MPSA64 PZTA63
Contextual Info: MPSA63 MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.

Contextual Info: MMBT2222A / PZT2222A NPN General-Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. C C E E SOT-23 Mark:1P C SOT-223 B Figure 1. MMBT2222A Device Package

Contextual Info: MPSA28 / MMBTA28 / PZTA28 MPSA28 MMBTA28 PZTA28 C C E C B TO-92 SOT-23 E B SOT-223 Mark: 3SS B E C NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03.

Contextual Info: PN2907A / MMBT2907A / PZT2907A PN2907A MMBT2907A PZT2907A C C E C B TO-92 B SOT-23 E B SOT-223 Mark: 2F E C PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced