SOT223 Search Results

smd diode marking 271

Abstract: SIPMOS N-channel Small-Signal-Transistor
Contextual Info: BSP89 Rev. 2.1 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS RDS on · Enhancement mode ID · Logic Level 240 V 6 W 0.35 A PG-SOT223 · dv/dt rated • Pb-free lead plating; RoHS compliant 4.5V rated lead plating; RoHS compliant

07256

Contextual Info: BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP110 in SOT223.

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4206GV ISSUE 3 - APRIL 1998 FEATURES * 60 Volt VDS * RDS on = 1Ω * Repetitive avalanche rating * No transient protection required * Characterised for 5V logic drive APPLICATIONS * Automotive relay drivers

Contextual Info: SO T2 23 PBSS5360Z 60 V, 3 A PNP low VCEsat BISS transistor 19 February 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

S305NZ

Abstract: PBSS305NZ PBSS305PZ SC-73
Contextual Info: PBSS305NZ 80 V, 5.1 A NPN low VCEsat BISS transistor Rev. 01 — 19 September 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

S306NZ

Abstract: PBSS306NZ PBSS306PZ SC-73 philips transistor smd code
Contextual Info: PBSS306NZ 100 V, 5.1 A NPN low VCEsat BISS transistor Rev. 01 — 20 September 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

PBHV9040T

Abstract: piezo actuator driver PBHV9040Z PBHV8115T PBHV8540T PBHV8540Z PBHV9115T PMBTA44 SC-73 PBHV8115X
Contextual Info: NXP BISS high voltage transistors in SOT23, SOT89 SC-62 and SOT223 (SC-73) Boost performance with BISS HV technology Helping you keep ahead of increasing demands on system performance, our latest series of BISS (Breakthrough In Small-Signal) high voltage transistors

PBHV8540Z

Abstract: PBHV9040Z SC-73 MARKING CODE SMD IC MARKING SMD IC CODE
Contextual Info: PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 14 January 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

TOP 948

Abstract: S944 BDS948 m lc 945 f 948 BDS944 BDS946 USB002 c 948 W468
Contextual Info: PHILIPS IN TE RNATIONAL SbE Product specification date of issue April 1991 • 711002b 00431ÛG 33fi « P H I N 33-/7 BDS944/946/948 Data sheet status D T- PNP silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 PNP silicon epitaxial base transistors

IC 651

Abstract: BDS645 BD8643 BDS647 Darlington NPN Silicon Diode BDS643 BDS649 BDS651
Contextual Info: 5bE D PHILIPS INTERNATIONAL Philips Components B D S 643/645/647/649/651 Data sheet status Product specification date o f issue April 1991 m 7110ÛEb DQ4314b 17T • PHIN r-33-z^j NPN Silicon Darlington power transistors DESCRIPTION PINNING -SOT223 DESCRIPTION

fzt591

Abstract: FZT491A FZT591A
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT591A ISSUE 1 - DECEMBER 2001 FEATURES L o w e q u iv a le n t on resistance RCE sat = 350m PART M ARKING DETAIL - FZT591A C O M PLEM ENTAR Y TYPE - FZT491A at 1A ABSOLUTE M A X IM U M RATINGS. PARAMETER

BSP78

Abstract: TRANSISTOR BSP 149 scr tic 118d tic 118d lamp 12v 21w HL 941 BSP75 bts933
Contextual Info: HL Application Note BSP 76, BSP 77, BSP 78, BTS 118D, BTS 134D, BTS 142 D1 The second generation of the HITFET family offers low RDS on and restart function in the SOT223 and D-Pak with low-input current drive Benno Köppl Introduction The age of Siemens Smart Power low-side switches began with the introduction of the

ZXTP19060CG

Abstract: TS16949 ZXTN19060CG ZXTP19060CGTA
Contextual Info: ZXTP19060CG 60V PNP medium transistor in SOT223 Summary BVCEO > -60V BVECO > -7V IC cont = 5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 3.0W Complementary part number ZXTN19060CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor

ZXTN2007G

Abstract: ZXTN2007GTA ZXTN2007GTC zxtn
Contextual Info: ZXTN2007G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

ZXMN6A09G

Abstract: TS16949 ZXMN6A09GTA
Contextual Info: ZXMN6A09G 60V SOT223 N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.040 @ VGS= 10V 7.5 0.060 @ VGS= 4.5V 6.2 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast

FZT949

Abstract: C20A C55A partmarking 6 Cc tba 900 FZT948 DSA003675
Contextual Info: FZT948 FZT949 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2 - NOVEMBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) * 6 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * Excellent hFE characteristics specified upto 20 Amps

ZXTP2014G

Abstract: ZXTP2014
Contextual Info: A Product Line of Diodes Incorporated ZXTP2014G Green 140V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -140V IC = -4A high Continuous Collector Current ICM = -10A Peak Pulse Current

fzt591a

Contextual Info: A Product Line of Diodes Incorporated Green FZT591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > -40V IC = -1A high Continuous Current Low saturation voltage VCE sat < -500mV @ -1A

Contextual Info: SO T2 23 BTA204W-600B 3Q Hi-Com Triac 15 August 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT223 surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and

Contextual Info: VZETIX SEMICONDUCTORS BSP75G 60V self-protected low-side IntelliFET MOSFET switch Summary Continuous drain source voltage V ds=60V On-state resistance 550m O Nominal load current 1.4A V|N = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. M onolithic over tem perature, over

Contextual Info: SO T2 23 BT134W-800 4Q Triac 12 June 2014 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT223 surface-mountable plastic package intended for use in applications requiring high bidirectional transient and blocking voltage

Contextual Info: SO T2 23 BT168GWF SCR 11 July 2014 Product data sheet 1. General description Planar passivated SCR with faster switching performance and sensitive gate in a SOT223 surface mounted plastic package. This SCR with enhanced commutation performance is also designed to be interfaced directly to microcontrollers, logic integrated

Contextual Info: SO T2 23 BTA204W-600D 3Q Hi-Com Triac 15 August 2014 Product data sheet 1. General description Planar passivated guaranteed commutation triac in a SOT223 surface mountable plastic package for use in motor control circuits or with other highly inductive loads. This triac

TSSOP16

Abstract: TSSOP16 datasheet sot223 transistor SOT23 sot89 To92 transistor TSSOP-16 SOP8 Package SSOT24
Contextual Info: Package Power Dissipation Power Dissipation: Pd（mW） Package Power Dissipation vs. Ambient Temperature Ambient Temperature: Ta（℃） USP6B/C SOT23/25/26/26W, SSOT24, MSOP8A/10 SOP8, TO92, SOT223 TSSOP16 SOT89/89-5 SOT23/25/26 When mounted on PCB TSSOP16 (When mounted on PCB)