BSP75 Search Results

BSP75NTA

Abstract: D8154
Contextual Info: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 500m⍀ Maximum nominal load current a 1.1A (VIN = 5V) Minimum nominal load current(c) 0.7A (VIN = 5V) Clamping energy 550mJ

Contextual Info: VZETIX SEMICONDUCTORS BSP75G 60V self-protected low-side IntelliFET MOSFET switch Summary Continuous drain source voltage V ds=60V On-state resistance 550m O Nominal load current 1.4A V|N = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. M onolithic over tem perature, over

BSP75N

Abstract: 24V PLC BSP75NTA
Contextual Info: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 500m⍀ Maximum nominal load current a 1.1A (VIN = 5V) Minimum nominal load current(c) 0.7A (VIN = 5V) Clamping energy 550mJ

Contextual Info: BSP75G ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET SUMMARY Continuous drain source voltage VDS=60V On-state resistance 550m Nominal load current 1.6A Clamping Energy 550mJ DESCRIPTION SOT223 PACKAGE Self protected low side MOSFET. Monolithic over temperature, over current, over

BSP75G

Contextual Info: BSP75G ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET SUMMARY Continuous drain source voltage VDS=60V On-state resistance 550m Nominal load current 1.6A Clamping Energy 550mJ DESCRIPTION Self protected low side MOSFET. Monolithic over temperature, over current, over

Contextual Info: SIEMENS HITFET Preliminary data BSP75 Smart Lowside Power Switch Features Product Summary • • • • • • • Continuous drain source voltage On-state resistance Current limitation Load current ISO Clamping energy Logic Level Input Input protection (ESD)

BSP75N

Contextual Info: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.2A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over

bsp752t switch

Contextual Info: Smart High-Side Power Switch BSP752T 6PDUW 3RZHU +LJK6LGH6ZLWFK HDWXUHV 3URGXFW 6XPPDU\ • 2YHUORDG SURWHFWLRQ 2YHUYROWDJH SURWHFWLRQ 9EE $= • &XUUHQW OLPLWDWLRQ 2SHUDWLQJ YROWDJH 9EE RQ • 6KRUW FLUFXLW SURWHFWLRQ 2QVWDWH UHVLVWDQFH 521  PΩ

BSP75

Abstract: Q67060-S7200-A2
Contextual Info: SIEMENS HITFET Preliminary data BSP75 Smart Lowside Power Switch Features Product Summary • • • • • • • Continuous drain source voltage On-state resistance Current limitation Load current ISO Clamping energy Logic Level Input Input protection (ESD)

MQ 136 pin diagram

Contextual Info: SIEMENS HITFET Preliminary data BSP75 Smart Lowside Power Switch Features Product Summary • • • • • • • Continuous drain source voltage On-state resistance Current limitation Load current ISO Clamping energy Logic Level Input Input protection (ESD)

Contextual Info: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 500m⍀ Maximum nominal load current a 1.1A (VIN = 5V) Minimum nominal load current(c) 0.7A (VIN = 5V) Clamping energy 550mJ

Contextual Info: BSP75G 60V N-channel self-protected enhancement mode IntelliFETTM MOSFET Summary Continuous drain source voltage On-state resistance Nominal load current Clamping energy S VDS=60V 550mΩ 1.6A 550mJ D D IN SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over current, over voltage active

Contextual Info: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over

522BS

Abstract: BSP75GTA
Contextual Info: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over

BSP752R

Abstract: Smart High-Side Power Switch smart SIPMOS
Contextual Info: Smart High-Side Power Switch BSP752R 6PDUW 3RZHU +LJK6LGH6ZLWFK HDWXUHV 3URGXFW 6XPPDU\ • 2YHUORDG SURWHFWLRQ 2YHUYROWDJH SURWHFWLRQ 9EE $= • &XUUHQW OLPLWDWLRQ 2SHUDWLQJ YROWDJH 9EE RQ • 6KRUW FLUFXLW SURWHFWLRQ 2QVWDWH UHVLVWDQFH 521  PΩ

Contextual Info: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over

Contextual Info: BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.2A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over

BSP75G

Abstract: BSP75GTA BSP75GTC
Contextual Info: BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m⍀ Nominal load current 1.4A VIN = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over

Contextual Info: www.zetex.com Company proprietary – Sales network use only Know–how New product information from Zetex March 2006 BSP75G and BSP75N self-protected MOSFETs Features Benefits • Load dump protection actively protects load • • Thermal shutdown with auto restart

BSP75G

Contextual Info: BSP75G ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET MOSFET SUMMARY Continuous drain source voltage VDS=60V On-state resistance 550m Nominal load current 1.6A Clamping Energy 550mJ DESCRIPTION Self protected low side MOSFET. Monolithic over temperature, over current, over

Contextual Info: SIEMENS Preliminary data sheet HITFET BSP 75A Smart Lowside Power Switch Features • • • • • • • Product Summary Continuous drain source voltage On-state resistance Current limitation Load current ISO Clamping energy Logic Level Input Input protection (ESD)

BSP78

Abstract: TRANSISTOR BSP 149 scr tic 118d tic 118d lamp 12v 21w HL 941 BSP75 bts933
Contextual Info: HL Application Note BSP 76, BSP 77, BSP 78, BTS 118D, BTS 134D, BTS 142 D1 The second generation of the HITFET family offers low RDS on and restart function in the SOT223 and D-Pak with low-input current drive Benno Köppl Introduction The age of Siemens Smart Power low-side switches began with the introduction of the

HITFET

Abstract: BSP75 Q67060-S7200-A2
Contextual Info: HITFET BSP 75A Smart Lowside Power Switch Features Product Summary Continuous drain source voltage On-state resistance Current limitation Load current ISO Clamping energy • Logic Level Input • Input protection (ESD) • Thermal shutdown (with restart)

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction