SMD IC MARKING 1A Search Results

transistor smd marking KA

Abstract: Marking KA 2SA1681 2SC4409 smd 1A smd marking KA smd marking TF
Contextual Info: Transistors SMD Type Power Switching Applications 2SC4409 Features Low Collector Saturation Voltage: VCE sat = 0.5V(max)(IC = 1A) High Speed Switching Time: tstg = 500ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SA1681

Contextual Info: SMD Type Product specification 2SA1681 Features Low Saturation Voltage: VCE sat = -0.5V(max)(IC = -1A) High Speed Switching Time: tstg = 300ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SC4409 Absolute Maximum Ratings Ta = 25

SMD transistor 23

Abstract: smd transistor marking 1A 2SA1681 la smd marking MARKING LA 1a smd transistor 2SC4409 smd 1A marking LA SMD smd marking 1a
Contextual Info: Transistors SMD Type Power Switching Applications 2SA1681 Features Low Saturation Voltage: VCE sat = -0.5V(max)(IC = -1A) High Speed Switching Time: tstg = 300ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SC4409

MARKING SMD npn TRANSISTOR 1a

Abstract: smd transistor marking br MARKING SMD npn TRANSISTOR 690 transistor Ic 1A datasheet NPN transistor smd 6a 9v smd transistor npn smd 2a smd transistor MARKING 2A npn SMD TRANSISTOR MARKING 2A smd transistor marking 1A
Contextual Info: Transistors SMD Type NPN Silicon Power Switching Transistor FCX690B Features 2W power dissipation. 6A peak pulse current. Gain of 400 @IC=1Amp. Very low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

Contextual Info: IC Transistors SMD Type PNP Silicon Planar Medium Power High Performance Transistor FCX591 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Power Collector dissipation: PC=1W ● Continuous Collector Current: IC=-1A 0.53±0.1

Contextual Info: Transistors IC SMD Type Product specification FCX690B Features 2W power dissipation. 6A peak pulse current. Gain of 400 @IC=1Amp. Very low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 45 V Collector-emitter voltage

Contextual Info: Transistors IC SMD Type Product specification FCX591 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Power Collector dissipation: PC=1W ● Continuous Collector Current: IC=-1A 0.53±0.1 3.00±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1

fmmt625

Contextual Info: ransistors SMD Type Product specification FMMT625 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Power dissipation :PC=625mW +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector current:IC=1A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

Contextual Info: ransistors SMD Type Product specification FMMT624 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Power dissipation :PC=625mW +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector current:IC=1A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

Contextual Info: Transistors SMD Type NPN Silicon Power Switching Transistor FMMT624 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Power dissipation :PC=625mW +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector current:IC=1A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1

Contextual Info: Transistors SMD Type NPN Silicon Power Switching Transistor FMMT625 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Power dissipation :PC=625mW +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector current:IC=1A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1

FMMT734

Abstract: smd transistor 5k
Contextual Info: Transistors SMD Type Power Darlington Transistor FMMT734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Extremely low VCE sat at high current (1A) 0.55 Very high hFE at high current (5A) +0.1 1.3-0.1 +0.1 2.4-0.1 625mW Power Dissipation 0.4 3 2 +0.1

Contextual Info: Transistors SMD Type Product specification FMMT734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Extremely low VCE sat at high current (1A) 0.55 Very high hFE at high current (5A) +0.1 1.3-0.1 +0.1 2.4-0.1 625mW Power Dissipation 0.4 3 2 +0.1 0.95-0.1

SMD MARKING A16

Contextual Info: Transistors IC SMD Type PNP Transistors 2SB1561-Q SOT-89 • Features Unit: mm +0.1 -0.1 +0.1 -0.1 4.50 1.50 +0.1 1.80-0.1 +0.1 2.50-0.1 1 2 3 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 VCE SAT =-0.15Vat IC/IB=-1A/-50mA +0.1 0.80-0.1

Contextual Info: SMD Type Product specification 2SA1364 Features High Voltage VCEO = -60V High Collector Current IC = -1A High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3444 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage

2SA1213

Abstract: 2SC2873 smd 1A smd ic marking PC SMD 20A 2SC287
Contextual Info: Transistors SMD Type Power Switching Applications 2SA1213 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -1A) High Speed Switching Time: tstg = 1.0ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2873

Contextual Info: SMD Type Product specification 2SA1213 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -1A) High Speed Switching Time: tstg = 1.0ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2873 Absolute Maximum Ratings Ta = 25

smd TRANSISTOR 1D

Abstract: SMD TRANSISTOR MARKING 1D SMD TRANSISTOR MARKING 1F smd transistor 1g SMD TRANSISTOR MARKING 1B transistor smd 1E ts 4141 TRANSISTOR smd 1D smd transistor TRANSISTOR smd 1D smd transistor marking 1h
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 Formed SMD Package NPN Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5212 Features Low collector saturation voltage VCE sat =0.2V typ. High fT fT=180MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1A. Small package for mounting. Absolute Maximum Ratings Ta = 25

C3076

Abstract: 2SC3076
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial 2SC3076 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low Collectror Saturation Voltage:VCE sat =0.5V(Max.)(IC=1A) +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15

transistor smd marking PE

Abstract: SMD TRANSISTOR MARKING 1D transistor smd marking PE 1b
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 Formed SMD Package NPN Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G

smd ic marking BJE

Abstract: transistor smd marking BJE 2SB1427
Contextual Info: Transistors SMD Type Power Transistor 2SB1427 Features Low saturation voltage, typically VCE sat =-0.5V at IC/IB =-1A/-50mA. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO

TRANSISTOR SMD 491

Contextual Info: Transistors IC SMD Type NPN Silicon Planar Medium Power Transistor FZT491 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 ● Continuous Collector Current: IC=1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Power Dissipation: PC=2W +0.2 0.90-0.2 +0.1

Contextual Info: Transistors IC SMD Type Product specification FZT489 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 ● Continuous Collector Current: IC=1A +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Power Dissipation: PC=2W +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3