SMD IC MARKING 115 Search Results

marking QE

Abstract: PMBTA14 PMBTA13
Contextual Info: bb53T31 □025flAcl 115 * A P X N APIER PHILIPS/DISCRETE PMBTA13 PMBTA14 b7E D y v . N-P-N SMALL-SIGNAL DARLINGTON TRANSISTORS N-P-N small-signal darlington transistors in a microminiature SMD envelope SOT-23 . Designed primarily for preamplifier input applications requiring high input impedance.

transistor pnp 12V 1A Continuous Current Peak 2A

Abstract: diode smd marking 147 MARKING SMD PNP TRANSISTOR 2a IB 115 smd transistor 2A FCX1147A
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX1147A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance.

Contextual Info: Transistors SMD Type Product specification FMMT634 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Highest current capability SOT23 darlington 0.55 625mW power dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

smd marking 634

Abstract: smd transistor 5k smd transistor MARKING 2A sot23 FMMT634 50K MARKING SOT23 high voltage TRANSISTOR SMD 1a 9 IS920
Contextual Info: Transistors SMD Type Power Darlington Transistor FMMT634 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Highest current capability SOT23 darlington 0.55 625mW power dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

ic 3A hfe 500

Abstract: MARKING SMD PNP TRANSISTOR FCX1149A TRANSISTOR SMD PNP 1A
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX1149A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 45mv Typ. Extremely low equivalent on-resistance.

Contextual Info: Transistors IC SMD Type Product specification FCX1149A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 45mv Typ. Extremely low equivalent on-resistance. RCE sat 67mÙ at 3A.

Contextual Info: SMD Type Product specification FZT851 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE sat 44mÙ at 5A. +0.1 3.00-0.1 6 Amps continuous current, up to 20 Amps peak current. +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features

6a smd transistor

Abstract: fzt851 npn smd 2a smd transistor 2A smd transistor MARKING 2A npn transistor smd 6a transistor marking 6A smd 6a transistor
Contextual Info: Transistors SMD Type NPN Silicon Planar High Current High Performance Transistor FZT851 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A. +0.1 3.00-0.1 6 Amps continuous current, up to 20 Amps peak current.

Contextual Info: Transistors IC SMD Type Product specification FCX1147A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance. RCE sat 53mÙ at 3A.

smd marking wm

Abstract: 2SA2058 smd marking TF
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Type 2SA2058 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High DC current gain: hFE = 200 to 500 IC = ?0.2 A 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low collector-emitter saturation voltage: VCE (sat) = ?0.19 V (max)

Contextual Info: SMD Type Product specification 2SA2058 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High DC current gain: hFE = 200 to 500 IC = ?0.2 A 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low collector-emitter saturation voltage: VCE (sat) = ?0.19 V (max)

Contextual Info: MOSFET IC SMD Type P-Channel 20V DS MOSFET UI2321DS K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 RDS(ON) < 50m RDS(ON) < 65m 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -4.5V) +0.05 0.1-0.01 (VGS = -2.5V) +0.1 0.97-0.1 RDS(ON) < 120m (VGS = -10V)

A18E smd

Abstract: A18E
Contextual Info: MOSFET IC SMD Type P-Channel Enhancement Mode Power MOSFET AO3401 SOT-23-3 Unit: mm • Features +0.2 2.9-0.2 +0.1 0.4-0.05 ● VDS V = -30V (VGS = -10V) RDS(ON) 65m (VGS = -4.5V) 1 ● RDS(ON) ＜ 120mΩ (VGS = -2.5V) 0.55 50m +0.2 1.6 -0.1 RDS(ON) +0.2

st smd marking code VU

Abstract: SMD TRANSISTOR MARKING 3B SMD HF transistor AEB01100 AED01098 AED010B7 AEP01099 AET01085 TLE4263G MARKING CODE SMD IC
Contextual Info: 823Sb05 DMfaSBB 115 SIEMENS 5-V Low -D rop V o ltage R eg u lato r TL E 4263 G P relim inary Data Bipolar 1C Features • • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Very low standby current consumption Overtemperature protection

Contextual Info: Transistors IC SMD Type PNP Silicon Planar Medium Power High Transistor FZT1151A SOT-223 • Features Unit: mm +0.2 3.50-0.2 ● Low saturation Voltage ● High Gain +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3

Contextual Info: Transistors SMD Type Product specification FZT1151A SOT-223 • Features Unit: mm +0.2 3.50-0.2 ● Low saturation Voltage ● High Gain +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 +0.2 0.90-0.2 +0.1 3.00-0.1 +0.3 7.00-0.3 4 1 Base 2 Collector 1 3

smd transistor A1

Abstract: DIODE smd marking A1 smd transistor 2a 43 KO3401 smd transistor marking A1 SMD TRANSISTOR MARKING 94 SMD TRANSISTOR A1 SOT23 smd diode A1 smd transistor A1 sot-23 marking A1 TRANSISTOR
Contextual Info: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3401 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 VDS V = -30V 0.4 3 (VGS = -10V) RDS(ON) 65m (VGS = -4.5V) 120m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -2.5V) +0.05 0.1-0.01

smd transistor g1

Abstract: g1 smd transistor g1 transistor smd ic MARKING QG marking G1 sot-23 smd transistor 26 smd transistor marking 26 SMD Transistor nc sot-23 Marking G1 MARKING 526 smd
Contextual Info: Transistors IC SMD Type P-Channel 20-V D-S MOSFET KI2351DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 100 % Rg tested 0.55 PWM Optimized +0.1 1.3-0.1 +0.1 2.4-0.1 TrenchFET Power MOSFET 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1

LM4851

Abstract: LM4851IBL LM4851IBL-1 LM4851ITL Thermalloy
Contextual Info: LM4851 Integrated Audio Amplifier System General Description Key Specifications The LM4851 is an audio power amplifier system capable of delivering 1.1W typ of continuous average power into a mono 8Ω bridged-tied load (BTL) with 1% THD+N and 115mW (typ) per channel of continuous average power into

JPP-95

Abstract: t3.15A/250V optocoupler 356T TEA1733 smd diode MARKING U3 SOD123 2KBP206G NCC KY NCC kmg smd diode GW t3.15A/250V fuse
Contextual Info: UM10385 GreenChip 65 W TEA1733 L T demo board Rev. 02 — 2 June 2010 User manual Document information Info Content Keywords Notebook adapter, TEA1733(L)T, Low standby power, High efficiency, fixed frequency flyback, jitter Abstract This manual provides the specification, schematics, and Printed-Circuit

Contextual Info: UM10421 GreenChip 65 W TEA1733LT/T printer reference board Rev. 1 — 17 December 2010 User manual Document information Info Content Keywords Printer adapter, TEA1733LT/T, low standby power, high-efficiency, fixed frequency flyback, jitter Abstract This manual provides the specification, schematics and Printed-Circuit

qml-38535

Abstract: CDFP2-F10 GDFP1-F10 LM7171 5962-9553601QPa LM7171AMWG-QMLV
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED Y R -M O -D A Add a device class V device. Make changes to table II and add table 115. 96-11-19 R. MONNIN Add case outlines H and X. Make changes to 1.2.4, 1.3, and FIGURE 1. 97-06-13 R. MONNIN Change case outline X dimensions L, R, and R1 for Figure 1. -Igt

IPC-SM-785

Abstract: GENERAL SEMICONDUCTOR MARKING UM micro solder ball AN-1112 WLCSP stencil design BGA and CSP
Contextual Info: National Semiconductor Application Note 1112 March 2002 CONTENTS Introduction to Micro SMD Package Construction Micro SMD Package Data Surface Mount Assembly Considerations PCB Layout Stencil Printing Process Component Placement Solder Paste Reflow and Cleaning

Power Supply Control IC dap 07 smd

Abstract: MARKING CODE SMD IC g1 tc-l 11w LM4855 LM4855IBL LM4855ITL
Contextual Info: LM4855 Integrated Audio Amplifier System General Description Key Specifications The LM4855 is an audio power amplifier system capable of delivering 1.1W typ of continuous average power into a mono 8Ω bridged-tied load (BTL) with 1% THD+N and 115mW (typ) per channel of continuous average power into