AO3401 Search Results

AO3401A

Abstract: P-Channel MOSFET AO3401
Contextual Info: AO3401A 30V P-Channel MOSFET General Description Product Summary The AO3401A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications.

A18E smd

Abstract: A18E
Contextual Info: MOSFET IC SMD Type P-Channel Enhancement Mode Power MOSFET AO3401 SOT-23-3 Unit: mm • Features +0.2 2.9-0.2 +0.1 0.4-0.05 ● VDS V = -30V (VGS = -10V) RDS(ON) 65m (VGS = -4.5V) 1 ● RDS(ON) ＜ 120mΩ (VGS = -2.5V) 0.55 50m +0.2 1.6 -0.1 RDS(ON) +0.2

Contextual Info: AO3401 P-Channel Enhancement Mode Field Effect Transistor Features TO-236 SOT-23 VDS (V) = -30V ID = -4.2 A (V GS = -10V) RDS(ON) < 50m Ω (VGS = -10V) RDS(ON) < 65m Ω (VGS = -4.5V) RDS(ON) < 120m Ω (VGS = -2.5V) D G D S G S General Description The AO3401 uses advanced trench technology to

AO3401 equivalent

Abstract: AO3401 AO3401L
Contextual Info: AOS Semiconductor Product Reliability Report AO3401 / AO3401L, rev E Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Nov 16, 2005 1 This AOS product reliability report summarizes the qualification result for AO3401/AO3401L.

AO3401A

Abstract: 43a sot23 ao3401 AO3401A_101
Contextual Info: AO3401A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3401A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a

JESD22-A108

Abstract: AO3401A JESD22A108 AO3401 JEDEC htrb FIT rate
Contextual Info: AOS Semiconductor Product Reliability Report AO3401A, rev C Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com This AOS product reliability report summarizes the qualification result for AO3401A. Accelerated environmental tests are performed on a specific sample size, and then followed

Contextual Info: AO3401A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3401A uses advanced trench technology to provide excellent RDS ON , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a

AO3401

Abstract: AO3401L transistor AO3401 M8011
Contextual Info: AO3401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3401 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM

Contextual Info: AO3401A 30V P-Channel MOSFET SOT23 Product Summary VDS ID at VGS=-10V -30V -4.0A RDS(ON) (at VGS=-10V) < 50mΩ RDS(ON) (at VGS =-4.5V) < 60mΩ RDS(ON) (at VGS=-2.5V) < 85mΩ D General Description The AO3401A uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation

Contextual Info: AO3401A 30V P-Channel MOSFET SOT23 Product Summary VDS ID at VGS=-10V -30V -4.0A RDS(ON) (at VGS=-10V) < 50mΩ RDS(ON) (at VGS =-4.5V) < 60mΩ RDS(ON) (at VGS=-2.5V) < 85mΩ D General Description The AO3401A uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation

ao3401

Abstract: P-Channel MOSFET
Contextual Info: AO3401 30V P-Channel MOSFET General Description Product Summary The AO3401 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

AO3401

Contextual Info: AO3401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3401 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM

AO3401AL

Abstract: AO3401A 43A SOT23 ao3401 2A1200 transistor 43A
Contextual Info: AO3401A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3401A/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a

AO3401

Abstract: J 115 mosfet
Contextual Info: AO3401 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS ON , Vgs@-10V, Ids@-4.2A < 64m Ω RDS(ON), Vgs@-4.5V, Ids@-4.0A < 75m Ω RDS(ON), Vgs@-2.5V, Ids@-1.0A < 120mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance

pin configuration NPN transistor c828

Abstract: w32 smd transistor aa26 fairchild smd transistor w32 speedtech p65 GMT795 foxconn npn transistor w16 SMI TSOP 48pin c427 diode
Contextual Info: 5 4 3 2 1 First International Computer,Inc Protable Computer Group HW Department D D Board name : Mother Board Schematic 1. Schematic Page Description : Project : AT11 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : 4. Nat name Description :

8a320

Abstract: TEESVB TEESVB21A VT1631 RM06FTN TEESVA1A 2R5TPE330M9 sanyo TEESVB21 CB1410QF smd transistor A7p
Contextual Info: 5 3 2 1 First International Computer,Inc Portable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : LM7WV 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : D C 4. Net name Description :

G545B1

Abstract: MAX8776 KBC1070-NU PDTA124EU-1-GP 74LVC1G08GW-1-GP 1SS355PT-GP SC470P50V2KX-3GP G546A1 kbc1070 isl6260
Contextual Info: 5 4 3 2 1 D D Wistron Confidential PV C 2007/03/30 C REV :PV-04 B B <Variant Name> A A Wistron Corporation 21F, 88, Sec.1, Hsin Tai Wu Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C. Title Size A3 Document Number Date: Friday, March 30, 2007 5 4 3 2 NORN Rev

SiS 661FX

Abstract: jbt1 D400F sis661fx Notebook lcd inverter schematic 71-D40U0-D04 lcd lg power board schematic LG crt monitor PCB schematic Preface Notebook Computer SiS 661 clock
Contextual Info: Preface Notebook Computer D400F/D410F Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are

CP2211

Abstract: VT1634 ac14g mitac 8 W83L950 LM358 K8N800 h55 MOTHERBOARD CIRCUIT diagram ICS952007 cb-1410
Contextual Info: SERVICE MANUAL FOR 8889 BY: Star Meng Repair Technology Research Department /EDVD Nov.2004 8889 N/B Maintenance Contents 1. Hardware Engineering Specification ……………………………………………………………………… 4 1.1 Introduction ………………………………………………………………………………………………………………. 4

diagram HANNSTAR k mv

Abstract: diagram HANNSTAR k mv 4 diagram motherboard hannStar K MV intel g31 motherboard repair 301LV ics1883 intel chipset g31 motherboard repair 8X8 DOT MATRIX DISPLAY COMMON ANODE g31 motherboard repair ICS1883AF
Contextual Info: SERVICE MANUAL FOR 8599 BY: Star Meng Repair Technology Research Department /EDVD Jun.2004 8599 N/B Maintenance Contents 1. Hardware Engineering Specification ……………………………………………………………………… 4 1.1 Introduction ………………………………………………………………………………………………………………. 4

str - z2156

Abstract: nforce4 ultra nForce4 sli CLEVO nvidia nforce4 TPS2231 rqa130n03 nforce4 subwoofer preamp diagram 6600m
Contextual Info: Preface Notebook Computer M590K Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are

Tablet PC R116 schematic

Abstract: swap net ns681680 qe r524 via vt1634 VT1631 vt8233a Insyde bios manual ns681680 VT2835 vt1634
Contextual Info: Preface TabletNote Computer T200C/T210C T200V/T210V Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are

SK 18751

Abstract: RR0510S-80R6-FN ALC269 FIC CW0A0 TRANSISTOR SMD K27 smd transistor g28 w32 smd transistor w27 smd transistor 1TJE125DP1A000B aPM4906
Contextual Info: 5 4 3 2 1 First International Computer,Inc Portable Computer Group HW Department D Board name : Mother Board Schematic D 1. Schematic Page Description : Project : CW0A0/CW0A1 Diamondville+945GMS+ICH7M Version : 0.1 2. PCI & IRQ & DMA Description : 3. Block Diagram :

ZENER D30

Abstract: aa26 fairchild ag20 taiyo R170 diode DIODE SMD C136 w32 smd transistor foxconn fic at11 st c632 Zener diode transistor C458
Contextual Info: 5 4 3 2 1 First International Computer,Inc Protable Computer Group HW Department D D Board name : Mother Board Schematic 1. Schematic Page Description : Project : AT11 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : 4. Nat name Description :