SMD DIODE CODE BER Search Results

smd diod

Abstract: smd diod mm
Contextual Info: Temic S e m i c o n d u c t o r s Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron T he type num ber o f sem iconductor devices consists of two letters follow ed by a serial num ber C M aterial

sot 363 dual smd ea code transistor

Abstract: smd diode 4pin D13 BAT6203WE scl 1444 ADUM1250ARZ CB6 smd transistor smd diode 4pin D11 EA 5pin transistor smd transistor A1 J45 USBMULTILINKBDME
Contextual Info: ISL9208EVAL2Z Rev. A User Guide Application Note Description This document is intended for use by individuals engaged in the development of hardware for a 4 to 7 series connected Li-ion battery pack using the ISL9208EVAL2Z board. The evaluation kit consists of the ISL9208EVAL2Z board.

3P03L04

Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
Contextual Info: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V

sanyo capacitor SE wg

Abstract: diode smd ED 56a smd diode bd QV smd mosfet
Contextual Info: y UNITRDDE UCC2882/-1 UCC3882/-1 Average Current Mode Synchronous Controller With 5-Bit DAC FEATURES DESCRIPTION • Combined DAC/Voltage Monitor and PWM with Synchronous Rectification Functions The UCC3882 combines high precision reference and voltage monitoring circuitry with average current mode PWM synchro­

3N06L06

Abstract: C4 diode ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 INFINEON smd PART MARKING IPI80N06S3L06
Contextual Info: Target data sheet IPI80N06S3L-06 IPP80N06S3L-06,IPB80N06S3L-06 OptiMOS -T Power-Transistor Feature • n-Channel • Enhancement mode • Logic Level • AEC Q101 qualified Product Summary VDS 55 V RDS on max. SMD version 5.6 mΩ ID 80 A P- TO262 -3-1

TDA 1004

Abstract: SH100G upn o GPP09027 STM16 STM-16 C622 sh100gbased gcdr3300a tdk inv
Contextual Info: High-Speed Clock and Data Recovery CDR 3300-00 Preliminary Data Bipolar IC Features • • • • • • Data rate from 2.5 to 3.3 Gbit/s Supply range from – 4.0 V to – 5.0 V Supply current 350 mA typ. Input sensitivity 20 mVpp differential BER = 10– 12

3N0625

Abstract: INFINEON PART MARKING 252 SMD marking code 1696 ANPS071E IPI25N06S3-25 IPP25N06S3-25 IPB25N06S3-25 INFINEON smd PART MARKING smd diode code marking 33A TO220 package infineon
Contextual Info: Target data sheet OptiMOS -T Power-Transistor Product Summary VDS Feature • n-Channel 55 RDS on max. SMD version • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) IPI25N06S3-25 IPP25N06S3-25,IPB25N06S3-25 P- TO262 -3-1 V 24.9

3N0607

Abstract: ANPS071E IPB80N06S3-07 IPI80N06S3-07 IPP80N06S3-07 DIODE 7387 smd diode code 102a c4 09 smd marking code
Contextual Info: Target data sheet OptiMOS -T Power-Transistor Feature • n-Channel • Enhancement mode • AEC Q101 qualified • Low On-Resistance RDS on IPI80N06S3-07 IPP80N06S3-07,IPB80N06S3-07 Product Summary VDS 55 V RDS(on) max. SMD version 6.5 mΩ ID 80 A P- TO262 -3-1

3PN0603

Abstract: INFINEON smd PART MARKING ANPS071E BIPP100N06S3-03 IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03
Contextual Info: Target data sheet IPI100N06S3-03 IPP100N06S3-03,IPB100N06S3-03 OptiMOS-T Power-Transistor Product Summary Feature VDS • n-Channel RDS on • Enhancement mode ID • AEC Q101 qualified • Low On-Resistance RDS(on) max. SMD version P- TO262 -3-1 55 V

ECG diodes

Abstract: L3 SOT23 MINIPROG CY7C63803 tyco header 6936 6 channel rc controller CY7C63803-SXC TV-20R
Contextual Info: CYRF6936 WirelessUSB LP 2.4 GHz Radio SoC Features • 2.4 GHz Direct Sequence Spread Spectrum DSSS radio transceiver ■ Battery Voltage Monitoring Circuitry ■ Supports coin-cell operated applications ■ Operating voltage from 1.8 V to 3.6 V ■ Operating temperature from 0 to 70°C

ECG diodes

Abstract: CYRF6936-40LFXC L3 SOT23 UAR72-4N5J10 LNA RSSI cyrf6936 40ltxc cyrf6936 CY7C63803-SXC cyrf6936 programming IND0402
Contextual Info: CYRF6936 WirelessUSB LP 2.4 GHz Radio SoC Features • 2.4 GHz Direct Sequence Spread Spectrum DSSS radio transceiver ■ Battery Voltage Monitoring Circuitry ■ Supports coin-cell operated applications ■ Operating voltage from 1.8 V to 3.6 V ■ Operating temperature from 0 to 70°C

Contextual Info: CYRF6936 WirelessUSB LP 2.4 GHz Radio SoC WirelessUSB™ LP 2.4 GHz Radio SoC Features • Battery Voltage Monitoring Circuitry ■ Supports coin-cell operated applications ■ Operating voltage from 1.8 V to 3.6 V ■ Operating temperature from 0 °C to 70 °C

2N04L03

Abstract: SPB80N04S2L-03 SPP80N04S2L-03
Contextual Info: SPP80N04S2L-03 SPB80N04S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version • Logic Level ID •=175°C operating temperature P-TO263-3-2 40 V 3.1 mΩ 80 A P-TO220-3-1

2N04L03

Abstract: ANPS071E SPB80N04S2L-03 SPP80N04S2L-03
Contextual Info: SPP80N04S2L-03 SPB80N04S2L-03 OptiMOS
Power-Transistor Product Summary Feature 40 VDS
N-Channel RDS on
Enhancement mode max. SMD version ID
Logic Level P- TO263 -3-2
175°C operating temperature V 3.1 m
80 A P- TO220 -3-1
Avalanche rated
dv/dt rated

2n08l07

Abstract: 67a smd 2N08L07 POWER 2n08l 2n08l07 marking smd diode 67A s6015 ANPS071E SPB80N08S2L-07 SPP80N08S2L-07
Contextual Info: SPP80N08S2L-07 SPB80N08S2L-07 OptiMOS
Power-Transistor Product Summary Feature 75 VDS
N-Channel RDS on
Enhancement mode max. SMD version ID
Logic Level P- TO263 -3-2
175°C operating temperature V 6.8 m
80 A P- TO220 -3-1
Avalanche rated
dv/dt rated

pn03l03

Abstract: Q67042-S4094 SPB100N03S2L-03 SPI100N03S2L-03 SPP100N03S2L-03 Q67042-S4055
Contextual Info: Preliminary data SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Excellent Gate Charge x RDS on P-TO262-3-1 VDS 30 RDS(on) max. SMD version 2.7 m
ID 100 A P-TO263-3-2

07n03l

Abstract: smd DIODE code marking 20A DIODE 07n03l 07N03 transistor 07N03L IPB07N03L IPP07N03L IPB07N03L SMD smd code diode 20a 246 smd code
Contextual Info: IPP07N03L IPB07N03L Preliminary data OptiMOS =Buck converter series Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 RDS(on) max. SMD version 5.9 m
ID 80 A P-TO263-3-2

Q67060-S6038

Abstract: SPB100N04S2L-03 SPP100N04S2L-03 Diode 1_b SMD PN04L03
Contextual Info: SPP100N04S2L-03 SPB100N04S2L-03 Preliminary data OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated Type Package VDS 40 RDS on max. SMD version 3 ID

2N03L06

Abstract: s4089 SPB80N03S2L-06 SPI80N03S2L-06 SPP80N03S2L-06 OPTIMOS
Contextual Info: Preliminary data SPI80N03S2L-06 SPP80N03S2L-06,SPB80N03S2L-06 OptiMOSâ Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) P-TO262-3-1 VDS 30 RDS(on) max. SMD version 5.9 m
ID 80

04N03L

Abstract: 04n03 IPB04N03L IPP04N03L Q67042-S4107
Contextual Info: IPP04N03L IPB04N03L Preliminary data OptiMOS
Buck converter series Product Summary Feature  N-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM) VDS 30 RDS(on) max. SMD version 3.9 m
ID 80 A
Superior thermal resistance P-TO263-3-2 V

05N03L

Abstract: SMD marking code 55A smd code diode 20a 154W IPB05N03L IPP05N03L
Contextual Info: IPP05N03L IPB05N03L Preliminary data OptiMOS =Buck converter series Product Summary Feature  N-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM) VDS 30 RDS(on) max. SMD version 4.9 m
ID 80 A
Superior thermal resistance P-TO263-3-2

2n03l03

Abstract: SPB80N03S2L-03 SPP80N03S2L-03
Contextual Info: SPP80N03S2L-03 SPB80N03S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Excellent Gate Charge x RDS on product (FOM) VDS 30 RDS(on) max. SMD version 2.8 m
ID 80 A P-TO263-3-2 V

ANPS071E

Abstract: SPB100N04S2L-03 SPP100N04S2L-03
Contextual Info: SPP100N04S2L-03 SPB100N04S2L-03 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level V 3 mΩ 100 P- TO263 -3-2 • 175°C operating temperature 40 A P- TO220 -3-1 • Avalanche rated

2n06l05

Abstract: ANPS071E SPB80N06S2L-05 SPI80N06S2L-05 SPP80N06S2L-05
Contextual Info: SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Avalanche rated  dv/dt rated P- TO262 -3-1 VDS 55 RDS on max. SMD version 4.5 m ID 80 A P- TO263 -3-2 Type Package