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    IPB100N06S3-03 Search Results

    IPB100N06S3-03 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPB100N06S3-03
    		Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 3.0 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; Original PDF 189.42KB 9
    IPB100N06S3-03
    		Infineon Technologies OptiMOS -T Power-Transistor Original PDF 161.7KB 8
    SF Impression Pixel

    IPB100N06S3-03 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB100N06S3-03

    POWER FIELD-EFFECT TRANSISTOR, 100A I(D), 55V, 0.003OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IPB100N06S3-03 12
    • 1 $3.75
    • 10 $2.50
    • 100 $1.88
    • 1000 $1.88
    • 10000 $1.88
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