SMD 3B5 Search Results

CZRB3009-G

Abstract: CZRB3005-G 3b3 smd zener diode 330 marking diode 3A1 zener diode smd 3F7 marking code 3B6 ,zener DIODE smd color marking Zener diode smd marking code 63 3F6 smd
Contextual Info: Comchip SMD Zener Diode SMD Diode Specialist CZRB3005-G Thru CZRB3200-G Voltage: 6.2 to 200 Volts Power: 3 Watts RoHS Device Features DO-214AA SMB -Glass passivated chip -Low leakage 0.191 (4.85) 0.171 (4.35) -Built-in strain telief -Low inductance -High peak reverse power dissipation

SMD zener diode 7.5 b

Abstract: smd zener diode color code zener DIODE smd color marking ,zener DIODE smd color marking zener diode 8.2 v smd SMD DO-213 ZENER DIODE zener 3B2 marking code 3B6 Diode zener smd 152 Zener diode smd marking code 63
Contextual Info: Comchip SMD Zener Diode SMD Diode Specialist CZRB3005-G Thru CZRB3200-G Voltage: 6.2 to 200 Volts Power: 3 Watts RoHS Device Features DO-214AA SMB -Glass passivated chip -Low leakage 0.191 (4.85) 0.171 (4.35) -Built-in strain telief -Low inductance -High peak reverse power dissipation

Nippon Chemi-Con sxf

Abstract: cm 4700m Nippon Chemi-Con sxc LXF CHEMI-CON old MFZ Series TC04R Gw Series Capacitors lgsn NMHR Nippon Chemi-Con LXJ LXY35VB
Contextual Info: ALUMINUM ELECTROLYTIC NIPPON CHEMI-CON QS 9000/ISO 9001 REGISTERED CAT. No. 12 PX Surface Mount Rated Terminal voltage range type Vdc Capacitance range (mF) Functional-polymer, super low ESR 105C 2,000 hours SMD 4 to 25 6.8 to 680 Solid aluminum, high heat resistance

smd transistor 2t1

Abstract: smd 3b5 PZT2907 transistor 3b5 smd PZT2907A t45 sot
Contextual Info: • bbS3T31 GÜ25Iîcn T45 « A P X N AMER PHILIPS/DISCRETE PZT2907 PZT2907A b?E D SILICON PLANAR EPITAXIAL TRANSISTORS PNP medium power transistors in a microminiature SMD envelope SO T-223 . Designed prim arily fo r high-speed switching and driver applications.

smd 3b5

Abstract: smd code mh 130C LESMBA2HU21L0E LESMCA4HU21L0E LESMCA4JU21L0E
Contextual Info: AMORPHOUS CHOKE COILS RoHS Compliant ?MAJOR USES @Choke coils for DC-DC converter @Output choke coils for Switching Mode Power Supply ?FEATURES @Minimum device thickness of 6.8 mm with high D.C. rated current @Remarkably small of D.C. resistance in this type of device

Contextual Info: AMORPHOUS CHOKE COILS ?MAJOR USES @Choke coils for DC-DC converter @Output choke coils for Switching Mode Power Supply ?FEATURES @Minimum device thickness of 6.8 mm with high D.C. rated current @Remarkably small of D.C. resistance in this type of device @Use of Fe-base amorphous for excellent operation stability at high temperature

AMORPHOUS CORE

Contextual Info: AMORPHOUS CHOKE COILS RoHS Compliant ?MAJOR USES @Choke coils for DC-DC converter @Output choke coils for Switching Mode Power Supply ?FEATURES @Minimum device thickness of 6.8 mm with high D.C. rated current @Remarkably small of D.C. resistance in this type of device

smd 3b5

Abstract: F32 smd code coils smd
Contextual Info: AMORPHOUS CHOKE COILS RoHS Compliant ?MAJOR USES @Choke coils for DC-DC converter @Output choke coils for Switching Mode Power Supply ?FEATURES @Minimum device thickness of 6.8 mm with high D.C. rated current @Remarkably small of D.C. resistance in this type of device

smd 3b5

Contextual Info: AMORPHOUS CHOKE COILS RoHS Compliant ?MAJOR USES @Choke coils for DC-DC converter @Output choke coils for Switching Mode Power Supply ?FEATURES @Minimum device thickness of 6.8 mm with high D.C. rated current @Remarkably small of D.C. resistance in this type of device

PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06

LM2596-ADJ

Abstract: NEC c157 marking code R74 SMD Transistor VR4133 K4S511632D ad1826 short stop 12v p18 30a altera midas transistor BD 222 SMD MARKING 11C5
Contextual Info: Preliminary User’s Manual startWARE-GHS-VR4133 Starter Kit VR4133 Document No. U16916EE2V0UM00 Date Published March 2004  NEC Corporation 2004 Printed in Germany The information in this document is subject to change without notice. No part of this document may

SMCA4JU21

Contextual Info: AMORPHOUS CHOKE COILS Upgrade! ?MAJOR USES @For DC-DC converter. @For switching mode power supplies. ?FEATURES @Minimum device thickness of 6.8 mm with high d.c. rated current. @Remarkably small of d.c. resistance in this type of device. @Use of Fe-base amorphous for excellent operation stability at high temperature.

220 to 12 dc

Abstract: SM5F2JL32 Nippon Chemi-Con sm SMCA4HU21ZPBF SMCA4HU21Z SMBA2HU21ZPBF CHEMICON SM
Contextual Info: AMORPHOUS CHOKE COILS Upgrade! ?MAJOR USES @For DC-DC converter. @For switching mode power supplies. ?FEATURES @Minimum device thickness of 6.8 mm with high d.c. rated current. @Remarkably small of d.c. resistance in this type of device. @Use of Fe-base amorphous for excellent operation stability at high temperature.

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6

smd transistor 8c

Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6

smd transistor 8c

Abstract: Diode SMD SJ 8C 6R160C6 transistor SMD 2h TRANSISTOR SMD MARKING CODE m3 IPA60R160C6 IPB60R160C6 IPP60R160C6 IPW60R160C6 JESD22
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6

rj48_con

Abstract: 5B1 package SMD 11D4 pc motherboard schematics 11B7 5A6 t smd
Contextual Info: DS21352DK T1 Single-Chip Transceiver Design Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS21352 design kit is an easy-to-use evaluation board for the DS21352 T1 single-chip transceiver SCT . The DS21352DK is intended to be used as a

5A6 smd

Abstract: smd 5b1 9A4 smd transistor Transistor 8c4 smd 3D5 3 PIN 11d4 Teccor Electronics a6 DK101 DK2000 DS2155DK
Contextual Info: DS2155DK/DS2156DK T1/E1/J1 Single-Chip Transceiver Design Kit Daughter Cards www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS2155/DS2156 design kits are evaluation boards for the DS2155 and DS2156. The DS2155/DS2156 design kits are intended to be used

smd 3b5

Abstract: smd 1A9 4a7 SMD 59629557701NXD 2A9 SMD
Contextual Info: SN54ABTH32245, SN74ABTH32245 36-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS228G – JUNE 1992 – REVISED MAY 1997 D D D D D D D Members of the Texas Instruments Widebus+ Family State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation

5A6 smd

Abstract: 10uF 160v Transistor 8c4 6c2 diode 9A4 SMD SMD 6c6 TANTALUM SMD CAPACITOR CROSS-REFERENCES Transistor 6C5 DK101 DK2000
Contextual Info: DS21354DK E1 Single-Chip Transceiver Design Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS21354 design kit is an easy-to-use evaluation board for the DS21354 E1 single-chip transceiver SCT . The DS21354DK is intended to be used as a

5A6 smd

Abstract: 4C6 SPECIFICATIONS 11d4 Transistor 8c4 smd 8c7 5a7 02 11d5 XC95144XL-10TQ100c DK101 DS18
Contextual Info: DS21352DK T1 Single-Chip Transceiver Design Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS21352 design kit is an easy-to-use evaluation board for the DS21352 T1 single-chip transceiver SCT . The DS21352DK is intended to be used as a

HALO N5

Abstract: RB342 Transistor SMD 5A6V SW 54B8 smd diode l03 5B1 International Rectifier Ferrite 3c8 transistor 55a3 55D8 top mark smd A12 5PIN
Contextual Info: DS33Z41DK Ethernet Transport Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS33Z41 design kit is an easy-to-use evaluation board for the DS33Z41 Ethernet transport-over-serial link device. The DS33Z41DK is intended to be used with a resource card for the serial link. The serial link

diode 6a6

Abstract: 6A6 DIODE RJ48 BTS 132 SMD NTH069A3 rj48 to db9 smd 5b1 smd transistor 6c5 2D4 SMD DS10
Contextual Info: DS26503DK T1/E1/J1 BITS Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26503DK is an easy-to-use evaluation board for the DS26503 T1/E1/J1 BITS element. The DS26503DK is intended to be used as a stand-alone design kit. The board is complete with a DS26503