IPB60R160C6 Search Results
IPB60R160C6 Datasheets (2)
Infineon Technologies
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPB60R160C6 | Infineon Technologies | N-Channel MOSFETs (>500V - 900V); Package: PG-TO263-3; VDS (max): 600.0 V; Package: D2PAK (TO-263); RDS(ON) @ TJ=25°C VGS=10: 160.0 mOhm; ID(max) @ TC=25°C: 23.8 A; IDpuls (max): 70.0 A; | Original | 1.62MB | 18 | ||
| IPB60R160C6ATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 23.8A TO263 | Original | 1.07MB |
IPB60R160C6 Price and Stock
Infineon Technologies AG
Infineon Technologies AG IPB60R160C6ATMA1Trans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R160C6ATMA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB60R160C6ATMA1 | Tape & Reel | 1,000 |
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IPB60R160C6ATMA1 |
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IPB60R160C6ATMA1 | 1 |
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IPB60R160C6ATMA1 | 9 Weeks | 1,000 |
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Infineon Technologies AG IPB60R160C6Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB60R160C6 | 391 |
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