SITI Search Results

ic sony 0642

Abstract: sony 0642 2SK677 IC 0642 sony ke 931 0642 sony
Contextual Info: _ 2SK677H5 SONY» AIGaAs/GaAs Low Noise Microwave H EM T C H IP Description The 2 S K 6 7 7 H 5 is an A IG aA s/G aA s HEM T c h ip fa b ric a te d by M O CVD M e ta l O rganic C hem ical V a p o r D e p o sitio n . T his 0 .5 m icro n gate FET fe a tu re s very lo w n o ise fig u re and h ig h

s272

Contextual Info: Temic BPY11 S e m i c o n d u c t o r s Silicon NPN Phototransistor Description B P V U is a v e ry h ig h se n sitiv e silic o n N P N e p ita x ial p la n a r p h o to tra n s is to r in a sta n d a rd T - 1 % p la stic p a c k ­ age. D u e to its w a te rc le a r e p o x y len s th e d e v ic e is se n sitiv e to

smd 1C

Contextual Info: TAIYO YUDEN H Y B R ID 1C : CAR AUDIO DIMENSIONAL PLAN OF SMD APPLIED PACKAGE TOR CAR AUDIO SET Dual type SMD-S M o unting D epo sition 1C it n n Iniiiin'n r r ~ n ~ T r r :i L i l ri f n ' Ì n r. unni m m nn _r. 3 . 2 + or ir n n T c z ir f i] gy 3.2 2.6

Contextual Info: SLD301V Sony. lO O m W High Power Laser Diode D e scrip tion SLD 301V P a ck a g e O u tlin e is a g ain-gu ided , high-pow ered U n it : mm la se r d io d e fa b ric a te d by M O C V D . M O C V D : M e ta l O rg a n ic C h e m ic a l V a p o r D e p o sitio n

SO-140

Abstract: DN74LS12
Contextual Info: DN74LS1 2 LS TTL DN74LS Series DN74LS12 T rip le 3 - input P o sitiv e NAND G ates with Open C ollector Outputs • Description P-1 DN 74LS12 contains three 3-input sitive isolation NAND gate circuits w ith open collector outputs. ■ Features • •

UGN 3140 sensor

Abstract: 3140u UGN-3140U 3140u hall effect switches UGN3140U UGS3140U UGS-3140U UGN 3140u sensor UGN-3140T 50G HALL SENSOR
Contextual Info: I UGN-3140T/U AND UGS-3140T/U SINGLE OUTPUT UNIPOLAR HALL EFFECT SWITCHES U G N -3140T/U A N D U GS-3140T/U U LTR A -SEN SITIV E H A LL EFFECT SW ITCHES FEATURES • • • • • • FUNCTIONAL BLOCK DIAGRAM 4.5 V to 24V Operation High Reliability— No Moving Parts

lu110

Abstract: PN108CL
Contextual Info: Panasonic Phototransistors PN108CL Silicon NPN Phototransistor U nit : mm For optical control systems • Features • H ig h se n sitiv ity : I C e l = 3-5 m A (m in .) (at L = 5 0 0 lx ) . 3 -00.45+ 0.05 • W id e d irection al se n sitiv ity for e a sy u se

74LS11 pin configuration

Abstract: M74HC11P 74LS11 IC pin configuration M74HC11 74LS11 circuit diagram with voltage 4000B 74LS11 M74HC11DP Mitsubishi 74LS11 CMOS 74LS11
Contextual Info: M I T S U B I S H I HIGH S P E E D C M O S M 74H C11P M 74H C11D P T R I P L E 3 -IN P U T P O S I T I V E AND G A T E DESCRIPTION PIN T he M74HC11 is a sem iconductor integrated circuit con­ CONFIGURATION TOP VIEW sisting of th re e 3-in put po sitiv e -lo g ic AND, usable as ne ga­

IC PIN CONFIGURATION OF 74LS02

Abstract: 74LS02 gate diagram 74LS02 pin configuration M74HC02DP M74HC02 74LS02 4000B M74HC02P
Contextual Info: M IT S U B IS H I HIGH S P E E D C M O S M74HC02P M74HC02DP Q U A D R U P L E 2 -IN P U T P O S IT IV E NOR G A TE DESCRIPTION The M 74H C 02 is a sem ico ndu ctor integrated circuit con­ sisting of four 2-input p o sitive -lo g ic NOR, usable as nega­ tiv e -lo g ic NAND gates.

DN74LS10

Abstract: MA161
Contextual Info: I LS TTL DN74LS Series DN74LS10 DN74LS10 T riple 3 - input P o sitiv e NAND Gates • Description D N 74LS10 contains three 3-input sitive isolation NAND gate circuits. ■ Features • • • • Low pow er consum ption P,j = 6mW typical High speed ( tpd = 10ns typical)

DN74LS22

Contextual Info: DN74LS22 LS T TL DN74LS Series DN74LS22 Dual 4 - input P o sitiv e NAND G ates with Open C ollector Outputs P-1 • Description DN 74LS22 contains tw o 4-input sitive isolation NAND gate circuits w ith open collector outputs. ■ Features • • • •

4000B

Abstract: M74HC4002 M74HC4002P
Contextual Info: M IT S U B IS H I HIGH S P E E D C M O S M 74H C 4002P D U A L 4 -IN P U T P O S IT IV E NOR G ATE DESCRIPTION PIN CONFIGURATION TOP VIEW T h e M 7 4 H C 4 0 0 2 is a sem iconductor in teg ra te d circuit con­ sisting of tw o 4-inp ut po sitive-logic N O R , usable as n e g a ­

MC75450

Abstract: mttl dk transistor DK 51* transistor
Contextual Info: g MC75450 M O TO R O LA D U A L PERIPHERAL P O SITIVE " A N D " D R IV E R D U A L PERIPHERAL PO S ITIVE "A N D " D R IV E R S ILIC O N M O N O L IT H IC IN T E G R A T E D C IR C U ITS T h e M C 7 5 4 5 0 is a versatile device designed fo r use as a general­

24A24

Contextual Info: VG/CA-B Alternate Insert sitions Special Insert A lte rna tions Sp ecia l insert a lternations are m a rke d b y p o s itio n . T h e p o sition n u m b e r Contact Arrangem ent sition of C on ta d Arrangem ent 1 2 S -1 1 2 S -2 12 S A 1 0 12 8 3 8 12

Contextual Info: Catalog 1307515 I s s u e d 9 -9 9 C H A M P .050 Series I Connectors Continued Single Connector Attachment (SCA-2) For SCSI Disk Drives HSSDC 8-sition Receptacle Assembly 8 -P o sitio n R e c e p ta c le , S tra d d le M ou n t Part N u m b e r 636145-1

Contextual Info: A-MP * 6, 14, 20 and 41 PO SITION SERIES “ M " CO N N EC T O R S IS 7170 RELEASED 9 • 1 4 * 6 4 j AMP IN C O R P O R A T E D 1 H A R R I S B U R G . PA . U S . A | REVISED 2•20•70 | TYPE n SOCKET T Y P E 11 I 50CKET S U B M I NI A T U RE C O A X IC O N

Contextual Info: 5Y P- CATHODE-RAY TUBES T h e T y p e 5 Y P - is an e lectro sta tic focus and de­ flectio n cathod e-ray tu b e, w ith very high sen sitiv ­ ity D 3 D 4 d eflectio n plates, featu rin g an in ten sifier for increased brigh tness and w riting rate, w ith a

sylvania

Abstract: 6y7g le 94 ST-12
Contextual Info: rHT' Sytvanio TYPE 6Y7G DOUBLE TRIO D E A M P L IF IC A T E U R 8-1 C LA SSE B C A R A C T E R IST IQ U E S T en sio n C o u ran t Am poule Culot — P o sition de ch a u ffa g e CA ou CC . de c h a u f f a g e .

6sg7

Abstract: 6SG7GT02SG7 jc7a 6S67 6sg7gt
Contextual Info: Û2SG7 6SG7, 6SG7GT TUNG'SOL -PENTODE COATED UNIPOTENTIAL CATHODE _ I 6 _ MA X. HEATER 6 . 3 VOLTS 300 MA. T -9 AC OR DC H MAX. ANY MOUNTING PO SITIO N 3— 16 MAX. - f t MAX HETAL SHELL GLASS BULB SMALL 8 PIN WAFER OCTAL THE 6SG7,6SG7GT IS A SEMI-REMOTE CUT OFF PENTODE VOLTAGE A M P L IF IE R IN THE

ST-12

Abstract: detecteur gaz
Contextual Info: DETECTEUR AMPLIFICATEUR CARACTERISTIQUES T ension filam e n t CA ou CC . C o u ra n t filam e n t . A m poule . C ulot — P e tit m odèle 5 b ro ch es P o sitio n de m o n tag e . C o n d itio n s d e fo n c tio n n e m e n t e t c a r a c té r is tiq u e s

74701

Abstract: TORR
Contextual Info: MAZDA BELMU F 9117 La jauge à ionisation F 9117 a été conçue pour la mesure des b asses pressions comprises entre 1 0 '3 Torr et 10'6 Torr. E lle comporte 3 électrodes dont la grille, faisant office d’accélérateur et de collecteur d’électrons, e s t portée à un potentiel po sitif élevé et le collecteur

Contextual Info: 5LP-A CATHODE-RAY TUBES T h e T y p e 5 L P - A c a th o d e -ra y tu b e s are d e ­ sig n ed fo r o sc illo g ra p h ic a p p lic a tio n s. T h e in te n ­ sifie r p r in c ip le is u se d to p ro v id e a m ax im u m d e fle c tio n se n sitiv ity fo r a g iv en fin a l a c c e le r a tin g

35z3 tube

Abstract: redresseur 35Z3 Sylvania 35A5
Contextual Info: CT9*F ï Sylvania TYPE 35Z3 Kî O REDRESSEUR DEM I-ONDE i I 1 CARACTERISTIQUES T en sio n C o u ran t Am poule Culot : P o sitio n 130 ch a u ffa g e n o m in ale CA ou CC ch a u ffa g e (n o m in al) . . .

caesium

Contextual Info: MAZDA PE52 PHOTO-ELECTRIC CELL GENERAL The Mazda H3.52 is a vacuum Photo-Electric C ell with a Caesium-Oxygen-Silver Cathode Surface, having maximum s e n s itiv ity In the red and Infra­ red region of the spectrum. PAT p ig Approximate S e n sitiv ity jiAAumen