SI4435D Search Results
SI4435D Datasheets (16)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| SI4435DDY-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 11.4A 8SOIC | Original | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4435DDY-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 11.4A 8-SOIC | Original | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Si4435DY | Fairchild Semiconductor | P-Channel Logic Level PowerTrench MOSFET | Original | 314.37KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4435DY | Fairchild Semiconductor | 30V P-Channel PowerTrench MOSFET | Original | 90.81KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4435DY | International Rectifier | HEXFET Power MOSFET | Original | 88.41KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4435DY | Kexin | P-Channel MOSFET | Original | 182.46KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Si4435DY | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Si4435DY | International Rectifier | HEXFET Power MOSFET | Scan | 328.64KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4435DY_NF073 | Fairchild Semiconductor | 30V P-Channel PowerTrench MOSFET | Original | 90.82KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4435DY_NL | Fairchild Semiconductor | 30V P-Channel PowerTrench MOSFET | Original | 90.82KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4435DYPBF | International Rectifier | HEXFET Power MOSFET | Original | 106.7KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4435DY-REVA | Vishay Telefunken | P-Channel 30-V (D-S) MOSFET | Original | 51.42KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4435DY-REVA | Siliconix | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P-Channel, -30V, Single, Pkg Style TSSOP-8 | Scan | 41.73KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Si4435DY SPICE Device Model | Vishay | P-Channel 30-V (D-S) MOSFET | Original | 177.58KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4435DYTR | International Rectifier | -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package | Original | 88.41KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4435DYTRPBF | International Rectifier | Original | 88.41KB | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4435D Price and Stock
Vishay Intertechnologies SI4435DDY-T1-GE3Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.5A; Idm: -50A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4435DDY-T1-GE3 | 3,387 | 1 |
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Buy Now | ||||||
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SI4435DDY-T1-GE3 | 130,000 | 2,500 |
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Buy Now | ||||||
| SI4435DDY-T1-GE3 | 17,500 | 2,500 |
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| SI4435DDY-T1-GE3 | 7,500 | 2,500 |
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| SI4435DDY-T1-GE3 | 3,387 | 129 |
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| SI4435DDY-T1-GE3 | 2,277 | 23 |
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SI4435DDY-T1-GE3 | Ammo Pack | 2,500 |
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Get Quote | ||||||
| SI4435DDY-T1-GE3 | Tape & Reel | 19 Weeks | 2,500 |
|
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SI4435DDY-T1-GE3 | 17,500 | 19 Weeks | 2,500 |
|
Buy Now | |||||
| SI4435DDY-T1-GE3 | 7,500 | 19 Weeks | 2,500 |
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Buy Now | ||||||
| SI4435DDY-T1-GE3 | Cut Strips | 2,277 | 19 Weeks | 1 |
|
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| SI4435DDY-T1-GE3 | 1,237 | 19 Weeks | 1 |
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SI4435DDY-T1-GE3 | Tape & Reel | 5,653 | 100 |
|
Buy Now | |||||
| SI4435DDY-T1-GE3 | Cut Tape | 5,653 | 1 |
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| SI4435DDY-T1-GE3 | Cut Tape | 2,500 | 2,500 |
|
Buy Now | ||||||
| SI4435DDY-T1-GE3 | Tape & Reel | 2,500 |
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Buy Now | |||||||
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SI4435DDY-T1-GE3 | Reel | 5,000 | 2,500 |
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| SI4435DDY-T1-GE3 | Cut Tape | 2,500 | 25 |
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SI4435DDY-T1-GE3 | 75 |
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SI4435DDY-T1-GE3 | 582 |
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SI4435DDY-T1-GE3 | Tape & Reel | 2,500 | 2,500 |
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SI4435DDY-T1-GE3 | 21 Weeks | 2,500 |
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SI4435DDY-T1-GE3 | 27 Weeks | 2,500 |
|
Get Quote | ||||||
Vishay Intertechnologies SI4435DDY-T1-E3Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.5A; Idm: -50A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SI4435DDY-T1-E3 | 3,041 | 1 |
|
Buy Now | ||||||
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SI4435DDY-T1-E3 | 7,500 | 2,500 |
|
Buy Now | ||||||
| SI4435DDY-T1-E3 | 3,041 | 134 |
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| SI4435DDY-T1-E3 | 1,927 | 49 |
|
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SI4435DDY-T1-E3 | Tape & Reel | 2,500 | 19 Weeks | 2,500 |
|
Buy Now | ||||
| SI4435DDY-T1-E3 | Ammo Pack | 2,500 |
|
Get Quote | |||||||
|
SI4435DDY-T1-E3 | 7,500 | 19 Weeks | 2,500 |
|
Buy Now | |||||
| SI4435DDY-T1-E3 | Cut Strips | 1,927 | 19 Weeks | 1 |
|
Buy Now | |||||
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SI4435DDY-T1-E3 | Cut Tape | 2,500 | 2,500 |
|
Buy Now | |||||
| SI4435DDY-T1-E3 | Cut Tape | 1,718 | 1 |
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Buy Now | ||||||
| SI4435DDY-T1-E3 | Tape & Reel | 1,718 | 100 |
|
Buy Now | ||||||
| SI4435DDY-T1-E3 | Tape & Reel | 2,500 |
|
Buy Now | |||||||
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SI4435DDY-T1-E3 | Reel | 2,500 |
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SI4435DDY-T1-E3 | 1,490 | 1 |
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Buy Now | ||||||
| SI4435DDY-T1-E3 | 283 |
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Get Quote | ||||||||
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SI4435DDY-T1-E3 | 1,192 |
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Buy Now | |||||||
| SI4435DDY-T1-E3 | 1,192 |
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Buy Now | ||||||||
| SI4435DDY-T1-E3 | 760 |
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Buy Now | ||||||||
| SI4435DDY-T1-E3 | 760 |
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Buy Now | ||||||||
| SI4435DDY-T1-E3 | 16 |
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Buy Now | ||||||||
| SI4435DDY-T1-E3 | 16 |
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Buy Now | ||||||||
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SI4435DDY-T1-E3 | 21 Weeks | 2,500 |
|
Get Quote | ||||||
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SI4435DDY-T1-E3 | 27 Weeks | 2,500 |
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Get Quote | ||||||
onsemi SI4435DYTransistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4435DY | 1,033 | 1 |
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Buy Now | ||||||
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SI4435DY | 7,500 | 671 |
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Buy Now | ||||||
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SI4435DY | Tape & Reel | 3,772 | 100 |
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Buy Now | |||||
| SI4435DY | Cut Tape | 3,772 | 5 |
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Buy Now | ||||||
| SI4435DY | Cut Tape | 2,500 |
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Buy Now | |||||||
| SI4435DY | Tape & Reel | 2,500 |
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Buy Now | |||||||
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SI4435DY | 996 | 1 |
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Buy Now | ||||||
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SI4435DY | 796 |
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Buy Now | |||||||
| SI4435DY | 796 |
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SI4435DY | 8,084 | 1 |
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Buy Now | ||||||
Infineon Technologies AG SI4435DYTRPBFTrans MOSFET P-CH Si 30V 8A 8-Pin SOIC T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4435DYTRPBF | 6,688 | 6 |
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Buy Now | ||||||
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SI4435DYTRPBF | Ammo Pack | 1 |
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Get Quote | ||||||
| SI4435DYTRPBF | Tape & Reel | 4,000 |
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SI4435DYTRPBF | Cut Strips | 6,688 | 22 Weeks | 1 |
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Buy Now | ||||
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SI4435DYTRPBF | Tape & Reel | 24 | 100 |
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Buy Now | |||||
| SI4435DYTRPBF | Cut Tape | 24 | 1 |
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Buy Now | ||||||
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SI4435DYTRPBF | Bulk | 4,000 |
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Get Quote | ||||||
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SI4435DYTRPBF | 30 |
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Get Quote | |||||||
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SI4435DYTRPBF | 18,700 |
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Buy Now | |||||||
Infineon Technologies AG SI4435DYPBFMOSFET, POWER, P-CH, VDSS -30V, RDS(ON) 0.015OHM, ID -8A, SO-8,PD 2.5W, VGS+/-20V,-55C |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4435DYPBF | Bulk | 3,800 |
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Get Quote | ||||||
SI4435D Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
7w66
Abstract: Si4435DY D665
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Original |
si4435dy7w66d665 | |
Si64
Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94
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Original |
si9435dysi4435dysi4953dysi6435dq+5 | |
Si4435DYContextual Info: Si4435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
Original |
si4435dys-47958--rev15-apr-96 | |
Si4435DYContextual Info: Si4435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
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si4435dys-47958--rev15-apr-96 | |
SI4435DY
Abstract: AN609 74549N
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Original |
si4435dyan60931-aug-0574549n | |
Si4435DDY
Abstract: Si4435DDY-T1-E3 Si4435DDY-T1-GE3
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Original |
si4435ddy2002/95/ecsi4435ddy-t1-e3si4435ddy-t1-ge3+1 | |
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Contextual Info: SPICE Device Model Si4435DDY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
si4435ddy2002/95/ec2011/65/eujs709a+1 | |
S-49534
Abstract: Si4435DY
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Original |
si4435dys-49534--rev06-oct-97s-49534 | |
IRF7101
Abstract: Si4435DYPbF
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Original |
si4435dypbfeia-481eia-541irf7101 | |
S-49534
Abstract: Si4435DY
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Original |
si4435dys-49534--rev06-oct-97s-49534 | |
Si4435DY
Abstract: Si4953DY Si6435DQ Si9430DY
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Original |
si9430dysi4435dysi4953dysi6435dq+2 | |
Si4435DY
Abstract: Si4953DY Si6435DQ Si9435DY
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Original |
si9435dysi4435dysi4953dysi6435dq+2 | |
Si9430DY
Abstract: Si4435DY Si4953DY Si6435DQ
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Original |
si9430dysi4435dysi4953dysi6435dq+2 | |
Si4435DY
Abstract: Si4953DY Si6435DQ Si9435DY
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Original |
si9435dysi4435dysi4953dysi6435dq+2 | |
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Si4435DY
Abstract: si4435
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Original |
si4435dysi4435 | |
PL504
Abstract: PQ508 PC525 PR521 PC515 PD510 PC523 RLZ20C mitac 6120 PR518
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Original |
pq508si4435dy80uh/33t/dpd506+13 | |
SI4435DY
Abstract: SI4435DY-T1
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Original |
si4435dysi4435dy-t118-jul-08 | |
AN609
Abstract: Si4435DDY
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Original |
si4435ddyan60930-jul-08 | |
PR40
Abstract: js27 C598 BKLVMAIN SFPJ-73 JS11
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Original |
sfpj-73dc2010120z/100mpc501+10 | |
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Contextual Info: New Product Si4435DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.024 at VGS = - 10 V - 11.4 0.035 at VGS = - 4.5 V - 9.4 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
Original |
si4435ddy2002/95/ecsi4435ddy-t1-e3si4435ddy-t1-ge3+2 | |
Si4435DDY
Abstract: Si4435DDY-T1-GE3 Si4435DDY-T1-E3 68841 Tf-1225
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Original |
si4435ddy2002/95/ecsi4435ddy-t1-e3si4435ddy-t1-ge3+3 | |
7w66Contextual Info: Si4435DY* P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching |
Original |
si4435dy7w66 | |
Si4435DYContextual Info: Si4435DY Siliconix PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -30 rDS(on) (W) ID (A) 0.02 @ VGS = -10 V "8.0 0.035 @ VGS = -4.5 V "6.0 S S S SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D Top View G D D D D PĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
Original |
si4435dys45252rev | |
Si4435DY
Abstract: Si4953DY Si6435DQ Si9435DY 70513 51361
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Original |
si9435dysi4435dysi4953dysi6435dq+4 | |