SI443 Search Results

SI4431CDY

Contextual Info: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SI4430B

Abstract: si4430bd
Contextual Info: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested

Contextual Info: AN440 Si4430/31/32 R EGISTER D ESCRIPTIONS 1. Complete Register Summary Table 1. Register Descriptions Add R/W Function/Desc D7 D6 D5 Data D4 D3 D2 D1 D0 POR Default 00 R Device Type dt[4] dt[3] dt[2] dt[1] dt[0] 08h 01 R Device Version vc[4] vc[3] vc[2] vc[1]

Si4430BDY

Abstract: Si4430BDY-T1-E3 Si4430BDY-T1-GE3
Contextual Info: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested

Si4430DY

Contextual Info: SPICE Device Model Si4430DY N-Channel 30-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

Si4431BDY-T1

Abstract: Si4431BDY Si4431BDY-T1-E3 si4431b
Contextual Info: Si4431BDY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V - 7.5 0.050 at VGS = - 4.5 V - 5.8 • TrenchFET Power MOSFETs Pb-free - 30 Available RoHS* COMPLIANT SO-8 S 1 8

7w66

Abstract: Si4435DY D665
Contextual Info: Si4435DY P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Si64

Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94
Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S

Si4435DY

Contextual Info: Si4435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

SI4431DY

Contextual Info: Si4431DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "5.8 0.070 @ VGS = –4.5 V "4.5 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

Si4435DY

Contextual Info: Si4435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

Contextual Info: Tem ic Si4431DY Semiconductors P-Channel 30-V D-S Rated MOSFET Product Sum m ary VDS(V) r DS(on) (£2) 30 Id (A) 0.040 @VGs = -10 V ±5.8 0.070 @ VGs = -4.5 V ±4.5 s s s SO-8 D D D D P-Channel MOSFET Absolute M axim um Ratings (Ta = 25 °C Unless Otherwise Noted)

Si1000

Abstract: 1000-TCB1C915 AN474 Silabs Si10xx Crystal Radio ezradiopro Si100x AN440 C8051F930
Contextual Info: AN474 Si1000 C OD E E X A M P L E S 1. Introduction The Si1000 is a mixed signal microcontroller with an integrated EZRadioPRO Sub-GHz wireless transceiver. The single chip Si1000 is functionally equivalent to the C8051F930 MCU and the Si4432 EZRadioPRO transceiver. The

SI4430BDY-E3

Abstract: S3550 SI4430BDY-T1-E3 Si4430BDY
Contextual Info: Si4430BDY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.006 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFETS D 100% Rg Tested Qg (Typ) 24 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D

Si4436DY

Abstract: S-60081-Rev
Contextual Info: Si4436DY New Product Vishay Siliconix N-Channel 60–V D–S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.036 at VGS = 10 V 8 0.043 at VGS = 4.5 V 8 VDS (V) 60 Qg (Typ) 10 5 nC 10.5 D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous

65521

Abstract: 9221 AN609 73727
Contextual Info: Si4438DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SI4430BDY

Abstract: 80 diode Si4430DY Si4430BDY-T1-E3 Si4430DY-T1 Si4430DY-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si4430BDY vs. Si4430DY Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4430BDY-T1-E3 Replaces Si4430DY-T1-E3 Si4430BDY-T1-E3 Replaces Si4430DY-T1 Summary of Performance:

Contextual Info: New Product Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • PWM-Optimized TrenchFET Power MOSFET • 100 % Rg Tested • Avalanche Tested

SI-4436

Contextual Info: New Product Si4436DY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.036 at VGS = 10 V 8 0.043 at VGS = 4.5 V 8 VDS (V) 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous

A1818

Abstract: SI4431BDY-T1-E3
Contextual Info: Si4431BDY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V - 7.5 0.050 at VGS = - 4.5 V - 5.8 • TrenchFET Power MOSFETs Pb-free - 30 Available RoHS* COMPLIANT SO-8 S 1 8

Si4430BDY

Abstract: A18280
Contextual Info: SPICE Device Model Si4430BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI4435DY

Abstract: AN609 74549N
Contextual Info: Si4435DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4434DY

Abstract: Si4434DY-T1-E3 Si4434DY-T1-GE3
Contextual Info: Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RrDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • Halogen-free According to IEC 61249-2-21 Definition • PWM-Optimized TrenchFET Power MOSFET

Si4430BDY

Abstract: Si4430BDY-T1-GE3 Si4430BDY-T1-E3
Contextual Info: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested