amphenol 03554
Contextual Info: 1 2 3 4 5 REVISIONS PART NUMBER LAST DIGIT INDICATING PACKAGING TYPE, NOT PRINTED ON THE PART A 6 REV. ECN A B DESCRIPTION DATE PROPOSAL ADD 2X1 AND 2X8 MAR08/09 APPROVED SEP03/10 A DATE CODE LIGHT PIPE CONFIGURATIONS U86-DX42C-10XX1 U86-DX42C-30XX1 U86-DX42C-20XX1
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mar08/09sep03/10u86-dx42c-10xx1u86-dx42c-30xx1+5u86-dx42c-20xx1ul94-0jul06/09p-u86-dx42c-x0xx1amphenol 03554
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Contextual Info: FORM 10-Q UNITED STATES SECURITIES AND EXCHANGE COMMISSION Washington, DC 20549 [X] QUARTERLY REPORT PURSUANT TO SECTION 13 OR 15 d OF THE SECURITIES EXCHANGE ACT OF 1934 For the quarterly period ended June 1, 2000 OR [ ] TRANSITION REPORT PURSUANT TO SECTION 13 OR 15(d) OF THE SECURITIES
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aug-31-2000sep-03-1999jun-01-2000 |
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LL103A
Abstract: SD103A SD103AW SD103BW SD103CW Micro Electronic Instrument
Contextual Info: SCHOTTKY BARRIER DIODE SD103AW THRU SD103CW VOLTAGE RANGE CURRENT 20 To 40 Volts 350 mA FEATURES • • • • • Fast Switching speed Low forward voltage Low capacitance Guard ring for transient and ESD protection Also available in the DO-35 package as SD103A and
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sd103awsd103cwdo-35sd103a+6ll103aod-123mil-std-202sep-03sd103bwmicro electronic instrument
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transistor 5-2736
Abstract: 55320 163356 59265 40198 40198 IC 5-2736 TARF1503U 54139 4504 0227
Contextual Info: TARF1503U NPN Planer RF TRANSISTOR SOT-323 □ DESCRIPTION unit : mm The TARF1503U is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT323 package
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tarf1503uot-323ot32310ghz+14800ghz000ghz200ghz400ghz600ghztransistor 5-273655320163356592654019840198 ic5-2736541394504 0227
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1733-9-1
Abstract: 60466 ice 0565 162022 52491 54645 165341 at 89552 data 137-411 TARF1504U
Contextual Info: TARF1504U NPN Planer RF TRANSISTOR SOT-323 □ DESCRIPTION unit : mm The TARF1504U is a low Noise figure and good associated gain performance at UHF, VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT323 package
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tarf1504uot-323ot323000ghz+13200ghz400ghz600ghz800ghz1733-9-160466ice 05651620225249154645165341at 89552 data137-411
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504-G
Abstract: HER501G HER508G 506-G
Contextual Info: HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER HER501G THRU HER508G VOLTAGE RANGE CURRENT 50 to 1000 Volts 5.0 Ampere FEATURES • • • • • • Glass passivated chip junction Low power loss, high efficiency Low Leakage High speed switching High Surge Capacity
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her501gher508gul94vstd-202e+4do-27sep-03504-g506-g
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SFP0-3040-L
Contextual Info: 63,25 REF 8 ,0 R E E 0 0 . 2 5 |a [ b 1 S IG N A L S 5 1 ,6 3 TYP \K_ QYy Per; PART TRAY SARTEN 16 96 NUMBER STATEMENT SEP0-3040-L No. 01 D E S C R IP A T IO N SFP CAGE N on-Lo go IN N FR/EUTFR Q ’t y 1 LIG H T M A T E R IA L COPPER ALLOY 02 CONNECTOR
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sep0-3040-lsfp0-3040-lcsfp0-3040-l |
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BCR139
Abstract: BCR139F BCR139L3 BCR139T SC75
Contextual Info: BCR139. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ BCR139/F/L3 BCR139T C 3 R1 1 B 2 E EHA07264 Type Marking Pin Configuration BCR139 WYs 1=B 2=E 3=C - - - SOT23
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bcr139bcr139/f/l3bcr139teha07264+4bcr139fbcr139l3sep-03-2003sc75
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BCR108T
Abstract: BCR164 BCR164F BCR164L3 BCR164T E6327 SC75
Contextual Info: BCR164. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 10kΩ BCR164F/L3 BCR164T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration Package BCR164F*
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CYGNAL cp2101
Abstract: "USB Connector" CYGNAL USB CABLE usb connector CP2101 cable rs232 CP2101 data cable CYGNAL INTEGRATED PRODUCTS DB9-connector
Contextual Info: CP2101 Evaluation Kit User’s Guide * Attention: Windows users should install Software according to the instructions in Section 2 BEFORE connecting the CP2101 USB cable to a PC. * 1. Kit Contents
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cp2101rs232cygnal cp2101usb connector+6cygnalusb cablecable rs232cp2101 data cablecygnal integrated productsdb9-connector
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bridge rectifier KBJ 606g
Abstract: 604g transistor 606G 603G KBJ601G KBJ607G
Contextual Info: SINGLE PHASE GLASS PSSIVATED BRIDGE RECTIFIER KBJ601G THRU KBJ607G VOLTAGE RANGE CURRENT 50 to 1000 Volts 6.0 Ampere FEATURES • • • • • Plastic package has UL flammability Classification 94V – 0 Glass passivated chip junction High case dielectric strength of 1500 VRMS
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kbj601gkbj607gmil-std-750sep-03+4bridge rectifier kbj 606g604g transistor606g603g
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RAS50
Abstract: Automotive Rectifier RAS5005 thru RAS5010 RAS5010 RAS5005
Contextual Info: AUTOMOTIVE RECTIFIER RAS5005 THRU RAS5010 VOLTAGE RANGE CURRENT 50 to 1000 Volts 50.0 Ampere FEATURES • • • • Low Leakage Low forward voltage drop High current capability High forward surge current capacity MECHANICAL DATA • • • • • • Case: transfer molded plastic
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ras5005ras5010ul94v-0mil-std-202e+5105ocsep-03ras50automotive rectifierras5005 thru ras5010
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Cygnal Integrated Products
Contextual Info: Preliminary CP2101 Single-Chip USB to UART Bridge SINGLE-CHIP USB to UART DATA TRANSFER - Integrated USB Transceiver; No External Resistors - Required Integrated Clock; No External Crystal Required Integrated 512-Byte EEPROM for Vendor ID, Product ID, Serial Number, Power Descriptor, Release Number and
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cp2101512-bytecip-51mcs-51+4b-100ds014-1sep03cygnal integrated products
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IGW08T120
Abstract: BUP305D BUP305-D mj04
Contextual Info: Preliminary IGW08T120 TrenchStoP Series Low Loss IGBT in Trench and Fieldstop technology C • • • • • Approx. 1.0V reduced VCE sat compared to BUP305D Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply
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DRF1601
Abstract: smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER
Contextual Info: UHF POWER TRANSISTOR DRF1601 NPN SiGe RF TRANSISTOR The DRF1601 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1601 can be used as a driver device or an output device, depending on the specific application.
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drf1601ot-223900mhz100nf+10100pfsmd transistor jsuhf power transistornpn medium power transistor in a smdfr4 epoxy dielectric constant 4.2power transistorsmd transistorsmd transistor 026pl sot223uhf power
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XFATM9B
Contextual Info: Sch e m atic: Isolation Voltage: 1500Vrms UTP SIDE OCL: 350uH Min @100KHz 100mV SmADC Rise Time 1 0 - 9 0 % : 2.5ns Typical Insertion Loss (300KHz—100MHz): —1.1 dB Maximum Insertion Loss (1 DOMHz—125MHz)i —1.5dB Maximum Return Loss: —18dB Min. @30MHz
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1500vrms350uh100khz100mv+7300khz-100mhzddmhz-125mhz-18db30mhz80mhzxfatm9b
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ice 38156
Abstract: 52169 TARF1504E 6012 transistor 20449 163462 76129 62639 160505 67551
Contextual Info: TARF1504E NPN Planer RF TRANSISTOR SOT-523 □ DESCRIPTION unit : mm The TARF1504E is a low Noise figure and good associated gain performance at UHF, VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT523 package
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BCR164
Abstract: BCR164F BCR164L3 BCR164T SC75 bcr1
Contextual Info: BCR164. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 10kΩ BCR164F/L3 BCR164T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration Package BCR164F*
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455 800 jrc
Abstract: NSVS1065 s11 mark smd
Contextual Info: NSVS1065 Sep-03 JRC SAW FILTER NSVS1065 Application FRS Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Spec. Typical Input and Output Impedance ― 50Ω Nominal Center Frequency (f0)
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BCR191
Abstract: BCR191F BCR191L3 BCR191S BCR191T BCR191W
Contextual Info: BCR191. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22kΩ , R2 = 22kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
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samsung 10K filing SEC
Abstract: samsung 10K filing SEC 2015 List of company identifications samsung electronics 10K filing SEC INTEL 8049 PC NEC 9736 samsung 10K 2015 DRAM 4416
Contextual Info: FORM 10-Q UNITED STATES SECURITIES AND EXCHANGE COMMISSION Washington, DC 20549 [X] QUARTERLY REPORT PURSUANT TO SECTION 13 OR 15 d OF THE SECURITIES EXCHANGE ACT OF 1934 For the quarterly period ended December 2, 1999 OR [ ] TRANSITION REPORT PURSUANT TO SECTION 13 OR 15(d) OF THE SECURITIES
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aug-31-2000sep-03-1999dec-02-1999samsung 10k filing sec+7samsung 10k filing sec 2015list of company identificationssamsung electronics 10k filing secintel 8049 pcnec 9736samsung 10k 2015dram 4416
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DFM IV
Abstract: 1506M 1502M dfm circuit DF15005M DF1510M 1510M
Contextual Info: SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER DF15005M THRU DF1510M VOLTAGE RANGE CURRENT 50 to 1000 Volts 1.5 Ampere FEATURES • • • • high forward surge current capability Glass passivated chip junction High case dielectric strength High temperature soldering guaranteed:
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35495 power transistor
Abstract: TRANSISTOR 35495 IC 49701 62150 35495 transistor 145158 44258 148-509 164-895 69065
Contextual Info: TARF1503Z NPN Planer RF TRANSISTOR SOT-343 unit : [mm] □ DESCRIPTION The TARF1503Z is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT343 package
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A 69157
Abstract: 276-145 transistor 585-42 ice 0565 151-237 74292 ic 74210 16-878-1 TARF1503E 74288
Contextual Info: TARF1503E NPN Planer RF TRANSISTOR SOT-523 □ DESCRIPTION unit : mm The TARF1503E is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT523 package
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tarf1503eot-523ot52310ghz+13800ghz000ghz200ghz400ghza 69157276-145transistor 585-42ice 0565151-23774292ic 7421016-878-174288
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