800GHZ Search Results

"Schottky Barrier Diodes"

Abstract: dh38 dh379 DH378 DH385
Contextual Info: DH378.DH385 G a A s S C H O T T K Y R E C E I V I N G D I O D E S FEATURES Chip diodes : 2 to 60GHz Case style flexibility M208, BH10, F51. Operating frequency range : packaged diodes : 2 to 40GHz A P P L IC A T IO N S The GaAs SCHOTTKY barrier diodes are used

Contextual Info: MITSUBISHI SILICON AVALANCHE PHOTODIODES blE ]> • PD1XX2 SERIES bSHRflST 0014705 TiT » M I T S MITSUBISHI DISCRETE SC FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS TYPE NAME DESCRIPTION FEATURES PD1XX2 is a silicon avalanche photodiode (Si-APD) • High speed response (pulse rise tim e 150ps)

FIM37200

Abstract: 100GBASE-LR4
Contextual Info: 100GE CFP Transceiver Description • CFP MSA Compliant • Data rate 103.125G 100GE & 111.809G (OTU-4) • Hot-pluggable • +3.3V single power supply • Dimensions (L W H) 145 77 14 mm • RoHS compliant Specifications Part Number Application Data Rate, each lane

SCF1001L4

Abstract: 8029 l2 SCF1011L4LNGG01
Contextual Info: TS-S12D072D January, 2013 100Gb/s CFP Optical Transceiver Module SCF1001L4 Series 100GBASE-LR4, ITU-T OTU-4,1300nm 4-lane WDM, EA-DFB, PIN-PD Features Æ 4-lane x 25.78Gb/s L-WDM Optical Interface Ü High quality and reliability optical sub-assemblies Ü

APX378

Abstract: C116
Contextual Info: APX378 GaAs BEAM LEAD SCHOTTKY R E C E I V I N G D I O D E S FEATURES Noise figure : 7.5dB at 94GHz Low capacitance Extremely rugged Passivated planar process construction. A P P L IC A T IO N S The GaAs SCHOTTKY barrier diodes are used as mixer or detector in receivers of frequency

750NR

Abstract: AD1000 1000nm ir avalanche photodiodes M025 PD1002 PD1032 10 gb laser diode Silicon apd
Contextual Info: MITSUBISHI SILICON AVALANCHE PHOTODIODES LIE D • b S 4 tìfl2cì 0 a m 7 0 S MITSUBISHI PD1XX2 SERIES TTT « M I T S DISCRETE SC FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS TYPE NAME FEATURES DESCRIPTION PD 1XX2 is a silico n avalanche p h o to d io d e (S i-A P D )