2N2324
Abstract: 2N2322 2N2329 2N2323 semiconductor 2N2323 2N2325 "Silicon Controlled Rectifier" 2 amps 2N2326 semiconductor case marking 16 2N2328
Contextual Info: 2N2322 2N2323 2N2324 2N2325 Central 2N2326 2N2327 2N2328 2N2329 TM Semiconductor Corp. SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2322 Series types are hermetically sealed Silicon Controlled Rectifiers designed for sensing
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2n23222n23232n23242n2325+82n23262n23272n23282n232911-decembersemiconductor 2n2323silicon controlled rectifier" 2 ampssemiconductor case marking 16
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1N5438
Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi
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27tfc1n5438tfc 56302n5161+7germanium2n41931n1319a2023 transistor2n2171n5159transistor bf 175
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1n813 fairchild
Abstract: 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog
Contextual Info: Fairchild Semiconductor Dab Cataloi 196! The Fairchild Semiconductor Data Cataloc — an all-inclusive volume of product infor mation covering diodes, transistors, digita and linear integrated circuits, MSI and LS devices from the world's largest suppliei
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br-br-0034-581n813 fairchild2n3303abb inverter manual acs 800+7fd6666 diode2n3137ua703 equivalentfd200 diode2n2369 avalanche pulse generatorua716fairchild dtl catalog
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108thmt11152n3303fpt100 phototransistor+7ua739 equivalenttransistor bc 554 pnpmt1039ft2974fairchild 2n3565fd6666 diodetransistor npn epitaxial silicon sst 117
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2N3800
Abstract: germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817
Contextual Info: DATA BDI S U P P L E M E NT This is the second supplement to the 2nd Edition of the Semiconductor Data Book originally published in August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. D evices characterized in this supplement include only the type numbers in tro
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29b52595f1352595f092n3800germanium+8diode germanium tu 38 e2n4051 motorola2n42802n39801n3492mc710f2n42762n3817
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2N2327A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SILICON CONTROLLED RECTIFIERS TO-39/TO-5 PACKAGE TO-39 jit^ nr fj! TO-5 UT li ! V drm VOLTS IT AMPS 80°C I drm HA VOLTS V gt Igt |iA mA WATTS 2N2322 25 1.6 10 0.35/0.8 200 2.0 0.1 2N2323 50 1.6 10 0.35/0.8 200 2.0 0.1 2N2323A 50
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2n23222n23232n2323a2n2324+72n2324a2n23252n2325a2n23262n2326a2n23272n2327a
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New England Semiconductor 2n2326a
Abstract: 2N2324A 2N2325 2N2322 2N2323 2N2323A 2N2324 2N2325A 2N2326 2N2326A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SILICON CONTROLLED RECTIFIERS TO-39/TO-5 PACKAGE DEVICE TYPE V drm VOLTS IT AMPS 80°C ¡D RM jiA Vgt VOLTS I gt HA mA Ih P gm WATTS TO-39 2N2322 25 1.6 10 0.35/0.8 200 2.0 0.1 fjl 2N2323 50 1.6 10 0.35/0.8 200 2.0 0.1 2N2323A 50
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o-39/to-52n23222n23232n2323a+72n23242n2324a2n23252n2325a2n23262n2326anew england semiconductor 2n2326a
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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triacs bt 804 600v
Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa tion for maintaining an unusually high level of quality, perfor
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comp27-1296triacs bt 804 600vur7201n4465+7ao110diode 1n5392n3750unitrode discrete databook2n6138cm104unitrode 679 bridge rectifier
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Q6012LH2
Abstract: mw 137 600g shindengen cf 318 rca thyristor manual SCR TAG 665 600 triac mw 137 600G SCR Handbook, rca motorola triac mac635-8 triac tag 252 600 S106D1
Contextual Info: PRODUCT CATALOG & DESIGN GUIDE Power Switching Semiconductor Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop
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ec114ec2114v1e0807q6012lh2mw 137 600g+8shindengen cf 318rca thyristor manualscr tag 665 600triac mw 137 600gscr handbook, rcamotorola triac mac635-8triac tag 252 600s106d1
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TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1
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od-80od-323ot-23ot-89+13ot-143ot-223ot-323triac 97a6s0805bh13003 transistor to220 equivalenttriacs bt 804 600vtriac bt 808 600cdiode sot-23 marking 15dzener diode 1n ph 486bs smd transistorz0409mf equivalentbt 808 600c
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D 4206 TRANSISTOR
Abstract: application 2N2323 2N2329 2N2323 DIODE dla 9-F 2N2324 3S74 2N2323A 2N2324A 2N2326
Contextual Info: I c j D D D O I S S □ □03SSci fl I niL SPECS MIL-S-19500/276A AMENDMENT 3 18 February 1981_ Su p e r s ed i ng AMENDMENT 2 5 J a n u a r y 1977 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE^THYRISTORS CONTROLLED RECTIFIERS , TYPES (BOTH TX AND NON-TX)
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mil-s-19500/276a2n23232n23242n2326+102n23282n23292n2323a2n2324a2n2326a2n2328ad 4206 transistorapplication 2n2323diode dla 9-f3s74
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TIC2260
Abstract: C10601 SC141D IN5829 IN3492 in540i IN1190 IN3493 IN1183A IN1184
Contextual Info: G EN ERA L PURPOSE R ECTIFO SS 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82 ÍE1 02553511 n""""35 11 I 820 00035 o r~ Of-o / lo AVERAGE RECTIFIED FORWARD CURRENT AMPERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM VFM Ca s é 3 3 5 6 MR500
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ddqd035mr500in5400in1612+16in1341amr750in1199ain3208in248bin1191atic2260c10601sc141din5829in3492in540iin1190in3493in1183ain1184
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SD5115
Abstract: IN3492 in1615 IN1202A IN5829 IN3495 IN3491 in3493 IN3880 2N15
Contextual Info: GENERAL PURPOSE RECTIFOSS 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82 ÍE102553511 n""""35 11I 820 00035 o r ~ O f - o / lo A V ER A G E REC TIFIED FORW ARD C U R R EN T AM PERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM V FM Ca s é 3 3
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mr500mr501mr502mr504+13mr506mr508mr510in3491in3492in3493sd5115in1615in1202ain5829in3495in38802n15
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Contextual Info: SCRS Continued 1.0 It (AMPS) 1.6 @ T c (°C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 TO-18 CASE TO-39 VRRM (VOLTS) 2N2322 25 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 2N2325 150 200 CS18B CS18B Z 2N1597A 2N1597 2N2326 2N2327 250 300 400 CS18D
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2n23222n15952n1595a2n2323+52n15962n1596a2n23242n2325cs18b
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2N1595
Abstract: 2N1595A 2N2324 2n1596 CS18D 2N1596A 2N1597 2N2322 2N2323 2N2325
Contextual Info: SCRS Continued 1.0 It (AMPS) 1.6 @ T c (°C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 TO-39 TO-18 CASE VRRM (VOLTS) 2N2322 25 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 2N2325 150 200 C S18B C S18BZ 2N1597A 2N1597 2N2326 2N2327 250 300 400 CS18D
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2n23222n15952n1595a2n2323+82n15962n1596a2n23242n2325cs18bcs18bzcs18d2n1597
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Contextual Info: m 2N2323 \ \ SILICON CONTROLLED RECTIFIER SCR DESCRIPTION: The 2N2323 is a Medium Current SCR for General Purpose Power Control Applications. PACKAGE STYLE T O -39 (8 .8 9 0 - 9 .398) 0.315- 0.335 MAXIMUM RATINGS (8.001- 8 .509) T 'r 1-6 A (RMS) @ Tc - 85 °C
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SCR 2N1599
Abstract: SCR 2N1595 BRX49 SCR c106B1 scr scr c103b CS83-110N 2N4174 scr 2N3669 2N4172
Contextual Info: SCRS Silicon Controlled Rectifiers Metal/Plastic Packages 0.8 to 110 Am peres RMS 15 to 1200 Volts 0.8 IT (AMPS) @ TC (°C) •TSM (AMPS) 55 55 55 55 60 60 6.0 6.0 6.0 6.0 10 10 I TO-18 CASE I TO-92 TO-92-18R VRRM (VOLTS) 15 2N876 2N884 30 2N877 2N885 2N3001
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2n8762n8772n8782n879+152n8802n8812n8822n8832n8842n885scr 2n1599scr 2n1595brx49 scrc106b1 scrscr c103bcs83-110n2n4174scr 2n36692n4172
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laser range finder schematics
Abstract: schematic satellite finder thyristor cdi Notebook lcd inverter schematic PNP SILICON TRANSISTORS MIL GRADE JANTXV 2N5666 1n5819 trr MICROSEMI 2N2907A scr firing circuit for dc servo driver cdi dc/dc
Contextual Info: power conditioning More than solutions, enabling possibilities Discrete Semiconductors Powermite Products Power Schottkys/Rectifiers MOSFETs Bipolar Transistors Silicon Controlled Rectifiers Battery Bypass Circuits Switching Power and Conditioning Signals
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laser range finder schematicsschematic satellite finderthyristor cdinotebook lcd inverter schematic+6pnp silicon transistors mil gradejantxv 2n56661n5819 trrmicrosemi 2n2907ascr firing circuit for dc servo drivercdi dc/dc
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2N2324
Abstract: 2N2323 JANTX application 2N2323 2N2323 2n2329s 2N2326S 2N2323A 2N2326 JANTX 2N2326 transistor U4
Contextual Info: INCH-POUND MIL-PRF-19500/276H w/AMENDMENT 1 24 November 2009 SUPERSEDING MIL-PRF-19500/276H 22 March 2006 The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 February 2010. PERFORMANCE SPECIFICATION SHEET
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mil-prf-19500/276h2n23232n23242n2326+112n23282n23292n2323a2n2324a2n2326a2n2323 jantxapplication 2n23232n2329s2n2326sjantx 2n2326transistor u4
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BRX49 equivalent
Abstract: FR207 equivalent 4835D TYN 208 equivalent BDW84C equivalent BTA16-600B equivalent BCX38C equivalent MP 1048 EM q4003l4 TYN208
Contextual Info: Index/Cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 Central Part Number Page Industry Part Number 1N968B 122 1N2838B 118 IN 969B 122 1N2839B 129 1N 67 A 118 1N970B 122 1N2840B 129 Code Code Central Part Number
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1n2701n2761n2831n295+161n457a1n703a1n705a1n746a1n747a1n750abrx49 equivalentfr207 equivalent4835dtyn 208 equivalentbdw84c equivalentbta16-600b equivalentbcx38c equivalentmp 1048 emq4003l4tyn208
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TIC2260
Abstract: t25000 IN1190 IN5829 IN3492 IN1184A sc1430 jb33 IN2158 in5834
Contextual Info: G E K E R A LP U R P O S E R EC TïFISR S 0258354 A D VA N CED S E M IC O N D U C T O R 82 tEl Q25a3Sl<0000035 ° I 82D 00035 o r - o / - o f lo AV ER A G E R ECTIFIED FORW ARD C U R R EN T AM PERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200
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mr500in5400in1612in1341a+16mr750in1199ain3208in248bin1191ain2154tic2260t25000in1190in5829in3492in1184asc1430jb33in2158in5834
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TRANSISTOR J 5804 NPN
Abstract: TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621
Contextual Info: PART NUMBER INDEX ni CR O S E M I CO RP / UIATERTOUN PART NU M BER I N 5614, 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, I N 5622, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, JTXV JTXV JTXV JTXV JTXV JTXV JTXV JTXV 1N5767 1N5802 1N5802, J, JTX, JTXV
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1n56151n56161n56171n5618+101n56191n56201n57671n58021n5804transistor j 5804 npntransistor j 5804transistor j 5803j 5804 transistor1n6621
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
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