SEME LAB Search Results

1N4003CSM

Contextual Info: mi- ËFFË mi SEME 1N4003CSM LAB MECHANICAL DATA Dimensions in mm inches GENERAL PURPOSE SILICON RECTIFIER DIODE 0.51 ± 0.10 (0.02 ± 0.004) 0.31 ' ( 0.012) rad. i 3 I General Purpose Rectifier Diode

2N2222ACSM4

Abstract: LCC3 weight 2n2222a
Contextual Info: SEME 2N2222ACSM4 LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR

28X1

Contextual Info: lili Itti SEME SMP1000G-KQ LAB MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES HIGH SENSITIVITY WIDEST SPECTRAL RESPONSE ENHANCED UV SENSITIVITY PHOTODIODE ISOLATED FROM PACKAGE EXCELLENT LINEARITY LOW NOISE INTEGRAL OPTICAL FILTER OPTION note 1

Contextual Info: SEME 2N930CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR

12W SOT23

Abstract: 2N2484 2N2484CSM 2n2484 reliability data 2N2484 SOT23
Contextual Info: SEME 2N2484CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR

LCC3 weight

Abstract: 2N2222A LCC1 2N2222ACSM-JQR-B 2N2222ACSM 2N2222ACSM4 2N2222ACSM4R
Contextual Info: SEME 2N2222ACSM4 LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR

2N918 semelab

Contextual Info: SEME 2N918CSM LAB GENERAL PURPOSE, SMALL SIGNAL NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.

SML5020BN

Abstract: W112A
Contextual Info: SEME SML5020BN LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC

2N3904CSM

Contextual Info: SEME 2N3904CSM LAB GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2

Contextual Info: SEME 2N2484CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR

2n918 transistor SOT23

Abstract: 2N918 2N918CSM
Contextual Info: SEME 2N918CSM LAB GENERAL PURPOSE, SMALL SIGNAL NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.

diode 104

Abstract: click 0819 SML5023BN
Contextual Info: SEME SML5023BN LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC

BFC42

Contextual Info: SEME BFC42 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69

LCC3 weight

Abstract: TRANSISTOR 023 2N3439 2N3439CSM4 2N3440 2N3440CSM4
Contextual Info: 2N3439CSM4 2N3440CSM4 SEME LAB HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13

Contextual Info: lili iFFi SEME SMP550G-FN LAB MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES NARROW RECEIVING ANGLES PHOTODIODE ISOLATED FROM PACKAGE EXCELLENT LINEARITY LOW NOISE WIDE SPECTRAL RESPONSE WIDE INTRINSIC BANDWIDTH LOW LEAKAGE CURRENT LOW CAPACITANCE

2N2907A

Abstract: 2N2907ACSM
Contextual Info: SEME 2N2907ACSM LAB HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 0.31 rad.

Contextual Info: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.

2N2369A

Abstract: 2N2369ACSM
Contextual Info: SEME 2N2369ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN

2N2222ACSM4

Contextual Info: mi SEME 2N2222ACSM4 LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR

NPN, PNP for 500ma, 30v

Contextual Info: Illl SEME HCT700 LAB MECHANICAL DATA Dimensions in mm inches COMPLIMENTARY SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS LCC2 - Ceramic Surface Mount Package FEATURES 2.29 * 0.20 (0.09 ± 0.008)

Contextual Info: mi Etti mi SMP400G-CB SEME LAB MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES PHOTODIODE ISOLATED FROM PACKAGE ENHANCED UV SENSITIVITY < EXCELLENT LINEARITY LOW NOISE WIDEST SPECTRAL RESPONSE WIDE INTRINSIC BANDWIDTH - - 0 4 .7 h

2N930

Abstract: 2N930CSM 500mW 5v transistor
Contextual Info: SEME 2N930CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR

SML01N07

Abstract: SML01N07T 100V 60A Diode
Contextual Info: SEME SML01N07 LAB 4TH GENERATION MOSFET MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790)

Contextual Info: Illl SEME 1N4001CSM LAB MECHANICAL DATA GENERAL PURPOSE SILICON RECTIFIER DIODE General Purpose Rectifier Diode In Hermetic Ceramic Surface Mount Package for High Reliability Applications 0.055 a = 1.02 ±0.10 max. (0.04 ± 0.004) SOT23 CERAMIC (CSM) Underside View