SC 107 TRANSISTOR Search Results

2N3820

Contextual Info: riOTOROLA SC -CDIODES/OPT0 } Type Number Page Number Page Number D-S D-S S-G Power 2N3743 3-105 3-107 3-107 3-100 3-109 3-109 3-111 3-111 2N3439 2N3440 2N3444S 2N3467 2N3468 2N34B5A 2N3486A 2-6 2-7 2-7 THYRISTORS 2-7 3-105 2N4199 through 2N4206 2-5 3-120 TRANSISTORS

BC107 characteristic

Abstract: BC109 MOTOROLA BC108 motorola BC107 BC109 characteristic BC107 MOTOROLA h22e bc107a BC109 BC108 characteristic
Contextual Info: MOTOROLA SC XSTRS/R F 12E 0 I b3b?SSM G0ä b4S S 1 BC107, A, B* C thru BC109, A, B, C M A X IM U M RATINGS R a tin g Sym bol BC BC BC 107 108 109 U nit Collector-Emitter Voltage VCEO 45 25 25 Vdc Collector-Base Voltage VcBO 50 30 30 Vdc Em itter-Base Voltage

mrf941

Abstract: MRF9411L s2l sot23
Contextual Info: MOTOROLA SC X S T R S / R MOTOROLA 4bE D • b3b?25M _ F m SEMICONDUCTOR ■ 0014*14*1 4 ■ *T^3 I - TECHNICAL DATA MRF941 MMBR941L MRF9411L The RF Lino NPN S ilico n Low N bise, High-Frequency Transistors lc 3 50 mA LOW NOISE HIGH FREQUENCY

MRF586

Abstract: MRF506 Motorola AR 164 MRF587 MRF587 equivalent
Contextual Info: MOTOROL A SC XSTRS/R F *4hE D b3b?254 DDTMTTM 1 •ROTfe » E 3 5 -O S MOTOROLA ■ SEMICONDUCTOR I MRF586 MRF587 TECHNICAL DATA D esign er's D ata Sheet The RF Line NPN SIU C O N HIGH FREQUENCY TRANSISTORS . . . designed for use in high-gain. low-noise ultra-linear, tuned and

transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

npn, transistor, sc 107 b

Abstract: motorola automotive transistor sc 107 transistor mj10012 motorola mj10012
Contextual Info: MOTOROLA Order this document by MJ10012/D SEMICONDUCTOR TECHNICAL DATA M J10012 M JH 10012 NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high-voltage, high-current Darlington transistors designed for automotive ignition, switching regulator and motor control applications.

bc 303 transistor

Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
Contextual Info: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in

TRANSISTOR BC 137

Abstract: TRANSISTOR bc107 current gain BC107 characteristic transistor bc 138 transistor BC109 bc 104 npn transistor XL08 bc109 BC107 Transistor BC107
Contextual Info: 2SC D • 023SbGS 00Q40ÔC1 T ■ S I E G ^ r NPN Silicon Transistors _ T -a f-V f SIEMENS AKTIEN G ESELLSCHA F IC 107 J C 108 BC 10g B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case 18 A 3 DIN 41876 . The collector is electrically connected to the case.

MRF9411L

Abstract: BR941
Contextual Info: 1EE D § b3L>7fiSM 0007=153 M | MOTOROLA SC XSTRS/R F MOTOROLA ! SEM ICONDUCTOR TECHNICAL DATA M RF941 M MBR941 M R F9 411 ,L The RF Line NPN Silicon Low Noise, High-Frequency Transistors lc = 50 m A L O W N O IS E H IG H F R E Q U E N C Y T R A N S IS T O R S

MRF9331

Abstract: MRF9331L BF432L BF432 MRF933
Contextual Info: MOTOROLA SC CXSTRS/R F ifbE H • b3b?25M 0015073 3 ■MOTb MOTOROLA ■ SEMICONDUCTOR wm TECHNICAL DATA MRF9331L BF432L* The RF Line N P N Silicon High-Frequency Transistor 'European Part Number . designed primarily for use in low power amplifiers to 1 GHz. Ideal for pagers and

bf433

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68
Contextual Info: MOTOROLA SC XSTR S/R F MbE » • b3b?ES4 OQTSGS^ *1 I noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Th« RF Line NPN Silico n RF Low Pow er Transistor 'European Part Number lc - 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz.

Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

BUS36

Abstract: BUS37 BUS37 MOTOROLA transistor 3-440 MARK B3L
Contextual Info: M O T O R O L A SC -CXSTRS/R F} I" ' 6367254 MOTÖ RO LA D^|t,3b7ESM SC' X S T R S / R F 96D -80706 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 12 A M PER ES SWITCHMODE llA SERIES NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS The BU S36 and BUS37 transistors are designed for low voltage,

2SC736

Abstract: BLY25 BLY26 CP430 2N5276 TA-D93 ML101B TAB101 NS9726
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C

MRF949

Abstract: MRF949T1
Contextual Info: Order this document by MRF949T1/D MRF949T1 NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9.0 GHz

Contextual Info: Order this document by MRF949T1/D MRF949T1 NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9.0 GHz

transistor k 425

Abstract: sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A
Contextual Info: MOTOROLA SC XSTRS/R F 12E I b3b75SM Q0fl4fl22 7 | BU522 BU522A BU522B MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O LTA G E SILICON POWER DARLINGTO NS 7 AMPERES Power Transistor mainly intended for use as ignition circuit output transistor. DARLINGTON T R IPLE D IFFU SED

microlab fc 730

Abstract: ic 1 ne 555 RF NPN POWER TRANSISTOR C 10-12 GHZ 02059 BF 245 A spice IC NE 555 datasheet part marking leb RF NPN POWER TRANSISTOR 2.5 GHZ MRF949 MRF949T1
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Order this document by MRF949T1/D NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well

transistor motorola 351

Abstract: MRF949T1 MRF949 sc 2878
Contextual Info: Order this document by MRF949T1/D NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9.0 GHz

sc 107 transistor

Abstract: SOT143 thermal impedance curve
Contextual Info: GENERAL Page Quality 82 Pro Electron type numbering system 82 Rating systems 83 Letter symbols 84 S-parameter definitions 87 Equivalent package designators 88 Transistor ratings 88 Thermal considerations 91 Power derating curves for SMDs Power derating curve for SOT23

Motorola transistor 388 TO-204AA

Contextual Info: MOTOROLA SC X S T R S / R F bBF T> b3b?2SM □ □ ' l a m a I MOTb 3?o MOTOROLA • I SEM ICO NDUCTO R TECHNICAL DATA IRF350 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number Voss IRF350 400 V This TMOS Power FET is designed for high voltage, high speed

2N6284 inverter schematic diagram

Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
Contextual Info: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital

Transistor BFX 90

Abstract: transistor bfx 73 BFX 514 BFX89 b 514 transistor
Contextual Info: 2SC D • û23ShQS 000474^ 4 W S I E ù NPN Silicon Transistor for RF Broadband Amplifier T ~ Z 'tï BFX 89 -SIEMENS AKTIEN GE SE LL SC HA F BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general