SA64 Search Results

SA647DH

Abstract: overtone butler oscillator delay mixer circuit diagram SA647 TSSOP-20 KSR18
Contextual Info: Philips Semiconductors Product specification Low-voltage digital IF receiver SA647 DESCRIPTION APPLICATIONS The SA647 is a low-voltage high performance monolithic digital system with high-speed RSSI incorporating a mixer, oscillator with buffered output, two limiting interm ediate frequency amplifiers, fast

Contextual Info: Part: SA64 Series: 500W Axial Leaded TVS Diode - SA Series Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 3.00 Maximum Temperature Max Temp (°C )

ITER

Abstract: DIGITAL IF RECEIVER
Contextual Info: INTEGRATED CIRCUITS SA647 Low-voltage digital IF receiver Product specification Philips Semiconductors 1998 Aug 10 PHILIPS Philips Semiconductors Product specification Low-voltage digital IF receiver SA647 DESCRIPTION APPLICATIONS The SA647 is a low-voltage high performance m onolithic digital

ba6489fs

Abstract: BA6479AFP-Y BA6608K BA6489 BA6608 1450 transistor ba6485 BA6845 BA6491FS Fdd spindle motor circuit 300
Contextual Info: ranrn ICs for Industrial Equipment FDD Block Diagram of Typical Applications « Single-chip FD D available in tuli-custom design Read/write amplifier Side BA M O O S e rte Side Motor driver Transistor array c= => f FDO controller S2PCS Series SA6470/ 80 $9 0 9 »

1F CAPACITOR 5.5v dc

Abstract: 10KW SA647 SA647DH TSSOP-20 50W linear power amplifier 47 db 41 mhz r30 3.0v
Contextual Info: INTEGRATED CIRCUITS SA647 Low-voltage digital IF receiver Product specification Philips Semiconductors 1998 Aug 10 Philips Semiconductors Product specification Low-voltage digital IF receiver SA647 DESCRIPTION APPLICATIONS The SA647 is a low-voltage high performance monolithic digital

DIGITAL IF RECEIVER

Contextual Info: Philips Semiconductors Product specification Low-voltage digital IF receiver SA647 DESCRIPTION APPLICATIONS The SA647 is a fow-voltage high performance monolithic digital system with high-speed RSSt incorporating a mixer, oscillator with buffered output, two limiting intermediate frequency amplifiers, fast

Contextual Info: 2 6±0'3 □ 3 > M a r k i n gs 1 <c 1 _ □ V Abbreviation of the i t em name Tab le Item 4 à A 2 LTR. D A T E BY REV. D E S C R I PT SCALE DATE O C T . 12.2001 2/1 No. UN I T mm I NCH) Number LG C -SA640 Z i rcon i a LG C -S A 6 4 0P Phosphor Cap PBT Resin

MPS3645

Abstract: MPS3644 CSA643G CSA643R CSA643Y CSA708 CSA708G CSA708R CSA708Y CSA970
Contextual Info: Electrical Characteristic* Ta=25°C, Unless Otherwise Specified Maximum Ratings Type No. CflO 'C E O ^EBO (V) Min (V) Min (V) Min 20 SA643G 20 C SA6430 Pd (W) @Tc=25°c ’c es m « (v ) Max 0.1 0.5 0.1 0.5 ^ce (pA) (V) Max hFE Min 200 25 9 'c & (mA)

Contextual Info: SA5.0 thru SA170CA Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle :

Contextual Info: SA5.0A thru SA170CA www.vishay.com Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 500 W peak pulse power capability with a 10/1000 s waveform, repetitive rate duty

AT49BV320D

Abstract: AT49BV320DT SA70 AT49BV
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

w19b320

Contextual Info: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

48C20

Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Contextual Info: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

SA11

Abstract: SA11A SA12 SA12A SA13 SA13A SA10 SA10A
Contextual Info: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS SA SERIES REVERSE VOLTAGE - 5.0 to 170 Volts POWER DISSIPATION - 500 WATTS DO-15 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

M15451E

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

Contextual Info: S29NS-R MirrorBit Flash Family S29NS01GR, S29NS512R, S29NS256R, S29NS128R 1024/512/256/128 Mb 64/32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory S29NS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Retired Product)

KL SN 102 94v

Abstract: wire T568 SCV64 The VMEbus Handbook, Fourth Ed VMEbus interface handbook Q002 ih 584 el designer manual kds 1555 SAA 1260 Ka 2535
Contextual Info: O p e n b u s In t e r fa c e C o m p o n e n t s SCV64 User Manual Issue 1 * / • bSflfllDl Q[ D24A0 134 ■ This Material Copyrighted By Its Respective Manufacturer T h e in fo rm a tio n in th is d o c u m e n t is su b je c t to c h a n g e w ith o u t n o tic e an d sh o u ld n o t be c o n stru ed as a

29LV641

Abstract: 29LV640D
Contextual Info: A D V A N C E IN F O R M A T IO N AMDil Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation Compatibility with JEDEC standards

L323C

Contextual Info: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile

740-0007

Abstract: EN29GL064 6A000
Contextual Info: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and