SA144 Search Results

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

Contextual Info: S29NS-R MirrorBit Flash Family S29NS01GR, S29NS512R, S29NS256R, S29NS128R 1024/512/256/128 Mb 64/32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory S29NS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Retired Product)

Contextual Info: IBM13T2649JC 2M x 64 S D R A M SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-Iine Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: 10 CAS Latency J Units j 3 jfcK I Clock Frequency j 100 j MHz ! jtcK

Contextual Info: IBM13T2649NC 2M x 64 SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-Iine Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: 10 CAS Latency § Units 3 jfcK I Clock Frequency I 100 j MHz jtcK j Clock Cycle

Contextual Info: IBM014405 IBM014405B 1 M x 4 10/10 EDO DRAM Features • 1,048,576 word by 4 bit organization - Active max - 95 mA / 80 mA (3.3V) - 85 mA / 70 mA (5.0V) - Standby Current: TTL Inputs (max) - 2.0 mA - Standby Current: CMOS Inputs (max) - 1.0 mA • Power Supply: 3.3V ± 0.3V or 5.0V ± 0.5V

Contextual Info: IBM0164805B IBM0164805P 8 M x 8 13/10 EDO DRAM Features • 8,388,608 word by 8 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time

Contextual Info: IB M 1 1 S 2 3 2 0 L N IB M 1 1 S 2 3 2 0 L L 2M x 32 SODIMM Module Features • 72-Pin Small Outline Dual-ln-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns fc A C CAS Access Time 15ns 20ns Access Time From Address 30ns 35ns W Irc Cycle Time

Contextual Info: IBM11M2720Q 2M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write parity applications • System Performance Benefits: • 2Mx72 Dual Bank Fast Page Mode DIMM - • Performance: -60 -70 Buffered inputs except RAS, Data

Contextual Info: IBM11M2645H 2M x 64 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 2Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins)

Contextual Info: IBM11S4320CP IBM11S4320CM 4M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: • High Performance C M O S process • Single 3.3 ± 0 .3V or 5 .0 ± 0 .25 V Power Supply -60 -70 tRAC RAS Access Time 60ns 70ns

Contextual Info: IB M 1 3 T 1 6 4 9 N C Preliminary 1M x 64 1 Bank SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: I 10 CAS Latency 3 ! 12 j Units ! 3 jfcK I Clock Frequency

Contextual Info: IBM11M2730H 2M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module Optimized for ECC applications System Performance Benefits: • 2Mx72 Fast Page Mode DIMM - Buffered inputs except RAS, Data - Reduced noise (32 Vss/Vcc Pins)

Contextual Info: IBM0117400 IBM0117400M IBM0117400B IBM0117400P 4M x 4 11/11 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 2048 Refresh Cycles - 32 ms Refresh Rate (SP version)

Contextual Info: IBM014440 IBM014440M IBM014440P 1M x 4 10/10 QUAD CAS DRAM Features • 1,048,576 word by 4 bit organization • Low Power Dissipation - Active max - 95 mA / 80 mA (3.3V) - 85 mA / 70 mA (5.0V) - Standby Current: TTL Inputs (max) - 2.0 mA (SP version) - 1.0 mA (IP version)

Contextual Info: IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1 M x 16 12/8 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)

Contextual Info: IBM11N16735B IBM11N16645B IBM11N16735C IBM11N16645C 16M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 16Mx64.16Mx72 Extended Data Out Page Mode DÎMMs • Performance: -60 Wc [RAS Access Time tCAC

Contextual Info: IBM11S4325BP IBM11S4325BM 4M X 32 SO DIMM Module Features 72-Pin Small Outline Dual-In -Line Memory Module Performance: -60 I -70 I i tRAc i RAS Access Time 60ns j 70ns j i tcAG i CAS Access Time 15ns I 20ns j i tAA I Access Time From Address j 30ns j 35ns !

Contextual Info: IBM0117800 IBM0117800M IBM0117800B IBM0117800P 2 M x 8 11/10 DRAM Features • 2,097,152 word by 8 bit organization • Single 3.3V ± 0 .3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 2048 Refresh Cycles - 32 ms Refresh Rate (SP version)

Contextual Info: IBM13N8739CC 8M x 72 2 Bank Unbuffered SDRAM Module Features • 168 Pin Unbuffered 8 Byte Dual In-line Memory Module • 8Mx72 Synchronous DRAM DIMM • Performance: j 10 j Units! CAS Latency 3 ! fcK I Clock Frequency jtcK j Clock Cycle iUc j Clock Access Time j

Contextual Info: IBM041814PQKB Preliminary 6 4 K X 18 BURST SRAM Features • 64K x 18 Synchronous Burst Mode SRAM • 5 V Tolerant I/O • 0.5n CMOS Technology • Asynchronous Output Enable • Synchronous Burst Mode of Operation Compati­ ble with PowerPC Processors

Contextual Info: IB M 0 1 5 1 6 0 IB M 0 1 5 1 6 1 256K X 16 DRAM Features • 256K X • 66MHz EDO performance 16 DRAM • Non-Persistent WPBM mode • Performance: Parameter -40 -50 -60 tRP RE Precharge 20ns 25ns 30ns tCAC Access Time from CË 12ns 14ns 15ns Ua Column Address Access

Contextual Info: IBM11M4640C 4M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 4Mx64 Fast Page Mode DIMM • Performance: -60 -70 W c RAS Access Time 60ns 70ns fc A C CAS Access Time 20ns 25ns tA A Access Time From Address 35ns

Contextual Info: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)

Contextual Info: IB M 1 1 M 1 6 7 3 5 B IB M 1 1 M 1 6 7 3 5 C 16M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • 16Mx72 Extended Data Out EDO Mode DIMMs • System Performance Benefits: - Buffered inputs (except RAS, Data)