S620 Search Results

S5590

Contextual Info: A a Si PHOTODIODES r-^tvî-iîMŒ! S-10. Si Photodiode with Built-in Pre-amp TE-cooledTyp Large area ( 1 0 x 1 0 mm , low noise, high stability The S6204 is a TE-cooled Si photodiode with operational amplifier for lowlight-level detection, e. g. spectrophotometry, NOx sensor. This integrates

IC 6201

Abstract: S6201 timer delay ic
Contextual Info: Preliminary S6201 Semiconductor BATTERY PROTECTION IC FOR 1-CELL PACK Description This is a battery protect solution IC which is integrated the protection IC developed for 1-cell series use in lithium Ion/lithium polymer rechargeable batteries and dual common drain N-channel MOSFET. It functions to protect the

Contextual Info: S6204 Data Sheet SiC Schottky Barrier Diode Bare Die VR 650V IF 8A*1 13nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type

lithium* protection overdischarge

Abstract: 12v lithium ion battery S-6202 VM330
Contextual Info: Preliminary S6202 Semiconductor BATTERY PROTECTION IC FOR 1-CELL PACK General Description This is a battery protect solution IC which is integrated the protection IC developed for 1-cell series use in lithium Ion/lithium polymer rechargeable batteries and dual common drain N-channel MOSFET. It functions to protect the

nox sensor

Contextual Info: PHOTODIODE WITH PRE-AMP S6204-01 PRELIMINARY DATA Jul. 1997 TE-cooled type, large area 10x10 mm FEATURES • UV to NIR Si photodiode optimized for precision photometry • Compact hermetic package with sapphire window • High precision FET input operational amplifier

Contextual Info: February 11th, 2004 TMX S620 SAW BANDPASS FILTER – BASE STATION - IF Preliminary Specification Rev 2 Operating Temperature range : [-5°C ; +85°C] Electrical parameters Unit Minimum Typical(2) Maximum (1) - Source Impedance (single ended) Ω - 50 Load Impedance (single ended)

Contextual Info: S6201 Data Sheet SiC Schottky Barrier Diode Bare Die VR 650V IF 6A*1 9nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type

Contextual Info: S6202 Data Sheet SiC Schottky Barrier Diode Bare Die VR 650V IF 10A*1 15nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type

NOx sensor

Contextual Info: Si PHOTODIODE WITH PRE-AMP S6204-03 PRELIMINARY DATA Jan. 1999 TE-cooled type, large active area <t>13 mm FEATURES • NIR Si photodiode optimized for precision photometry • Compact hermetic package with plastic lens ■ High precision FET input operational amplifier

photodiode ge

Abstract: UV light lens detector S6204 S6204-01 S6204-03
Contextual Info: PHOTODIODE Si photodiode with preamp S6204 series Large area photodiode integrated with op amp and TE-cooler S6204 series is a thermoelectrically cooled Si photodiode developed for low-light-level detection. A large area photodiode, op amp, TE-cooler and feedback resistor 10 GΩ are integrated into a single package. A thermistor is also included in the same package for temperature control so that

Contextual Info: Preliminary S6202 Semiconductor BATTERY PROTECTION IC FOR 1-CELL PACK General Description This is a battery protect solution IC which is integrated the protection IC developed for 1-cell series use in lithium Ion/lithium polymer rechargeable batteries and dual common drain N-channel MOSFET. It functions to protect the

Contextual Info: DIGITRON SEMICONDUCTORS S6200 SERIES S6210 SERIES S6220 SERIES SILICON CONTROLLED RECTIFIER Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

lithium protection ic

Abstract: S6200 battery overcharge overdischarge integrated circuit BATTERY CHARGE I.C
Contextual Info: S6200 Semiconductor BATTERY PROTECTION IC FOR 1-CELL PACK Description This is a battery protect solution IC which is integrated the protection IC developed for 1-cell series use in lithium Ion/lithium polymer rechargeable batteries and dual common drain N-channel MOSFET. It functions to protect the

Contextual Info: S6203 Data Sheet SiC Schottky Barrier Diode Bare Die VR 650V IF 20A*1 31nC QC lFeatures lInner circuit 1 Shorter recovery time C) 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type

Contextual Info: S6207 Data Sheet SiC Schottky Barrier Diode Bare Die VR 650V IF 15A*1 23nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type

Contextual Info: S6205 Data Sheet SiC Schottky Barrier Diode Bare Die VR 650V IF 12A*1 18nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type

Contextual Info: S6200 Semiconductor BATTERY PROTECTION IC FOR 1-CELL PACK Description This is a battery protect solution IC which is integrated the protection IC developed for 1-cell series use in lithium Ion/lithium polymer rechargeable batteries and dual common drain N-channel MOSFET. It functions to protect the

Contextual Info: Preliminary S6201 Semiconductor BATTERY PROTECTION IC FOR 1-CELL PACK Description This is a battery protect solution IC which is integrated the protection IC developed for 1-cell series use in lithium Ion/lithium polymer rechargeable batteries and dual common drain N-channel MOSFET. It functions to protect the

DS1200

Abstract: DS1204 DS2400 DS6200 DS6201 DS6204 DS6205 DS6207 DS620X
Contextual Info: DALLAS SEMI CON DUCTOR CORP 3SE D H EblHlBO 0003b4L. Ô El DAL S620x am M iM •«¿ÉT N * M a ÌH te ÌN M M B a i S620X CyberKey SEMICONDUCTOR - T ' C , 3 . f5 T jr v ' ¡¿ â n à iâ a à FEATURES PACKAGE/PIN DESCRIPTION • G rea ter than 5 0 ,0 0 0 cycle connector life

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Q600

Abstract: 2N4101 2N4102 S2060 S2061 S2062 S2400 S2600 S2610 S2620
Contextual Info: Application Information continued SCR's Current *T (R M S ) a Voltage Range - V Package Series T O -2 2 0 A 8 (V E R S A W A T T ) S2060 S2061 S2062 Typical Applications LOW -CURRENT S E N S IT IV E -G A T E 4 15-600 Logic Interface to Power C o n tro l

MA7805

Abstract: BC128 2S746 BSY37 2S745 2SC183 OC740 PMT120 SAC40
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

S4112

Abstract: S25920
Contextual Info: Other Types of Si Photodiode S i P h o t o d i o d e s W it h P r e - a m p lif ie r Atfive Area TyceNo F oas SSRStMfy Waueiength Spectral Response Rango X dm rnm) 190 to 1100 S1406-04 320 to 1100 2.4x2.4 S 1406-06 SSS80 960 «2.54 320 to 1060 920 High-speed response

SiE812DF

Abstract: SiE812DF-T1-E3
Contextual Info: SiE812DF Vishay Siliconix New Product N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package