S6204 Search Results

S5590

Contextual Info: A a Si PHOTODIODES r-^tvî-iîMŒ! S-10. Si Photodiode with Built-in Pre-amp TE-cooledTyp Large area ( 1 0 x 1 0 mm , low noise, high stability The S6204 is a TE-cooled Si photodiode with operational amplifier for lowlight-level detection, e. g. spectrophotometry, NOx sensor. This integrates

Contextual Info: S6204 Data Sheet SiC Schottky Barrier Diode Bare Die VR 650V IF 8A*1 13nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type

nox sensor

Contextual Info: PHOTODIODE WITH PRE-AMP S6204-01 PRELIMINARY DATA Jul. 1997 TE-cooled type, large area 10x10 mm FEATURES • UV to NIR Si photodiode optimized for precision photometry • Compact hermetic package with sapphire window • High precision FET input operational amplifier

NOx sensor

Contextual Info: Si PHOTODIODE WITH PRE-AMP S6204-03 PRELIMINARY DATA Jan. 1999 TE-cooled type, large active area <t>13 mm FEATURES • NIR Si photodiode optimized for precision photometry • Compact hermetic package with plastic lens ■ High precision FET input operational amplifier

photodiode ge

Abstract: UV light lens detector S6204 S6204-01 S6204-03
Contextual Info: PHOTODIODE Si photodiode with preamp S6204 series Large area photodiode integrated with op amp and TE-cooler S6204 series is a thermoelectrically cooled Si photodiode developed for low-light-level detection. A large area photodiode, op amp, TE-cooler and feedback resistor 10 GΩ are integrated into a single package. A thermistor is also included in the same package for temperature control so that

Contextual Info: Si PHOTODIODES WITH PREAMP S6204-01, S6204-03 Thermoelectrically cooled, large-area photodiodes FEATURES l Silicon photodiode for high precision photometry in UV to near infrared l Hermetically sealed metal package S6204-01: Sapphire window S6204-03: Plastic lens

S4112

Abstract: S25920
Contextual Info: Other Types of Si Photodiode S i P h o t o d i o d e s W it h P r e - a m p lif ie r Atfive Area TyceNo F oas SSRStMfy Waueiength Spectral Response Rango X dm rnm) 190 to 1100 S1406-04 320 to 1100 2.4x2.4 S 1406-06 SSS80 960 «2.54 320 to 1060 920 High-speed response

SI3437DV

Abstract: 74214 SI3437
Contextual Info: SPICE Device Model Si3437DV Vishay Siliconix P-Channel 150-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3475DV

Contextual Info: SPICE Device Model Si3475DV Vishay Siliconix P-Channel 200-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUD40N10-25

Contextual Info: SPICE Device Model SUD40N10-25 Vishay Siliconix N-Channel 100-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

D2061 transistor

Abstract: B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064
Contextual Info: ORDER NO. MD0604120A3 DVD Stereo System SA-VK650GCP Colour S . Silver Type Please use this manual together with the service manual for Model No. [SA-VK650GC/GN/GS/GCS/GCT-S, Order No. MD0604118C3]. Specifications n SYSTEM SC-VK650(GCP) Notes: Music Center: SA-VK650 (GCP)

74219

Abstract: SiE812DF 74219+ram
Contextual Info: SPICE Device Model SiE812DF Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1470DH

Contextual Info: SPICE Device Model Si1470DH Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUD40N10-25

Abstract: 119pF
Contextual Info: SPICE Device Model SUD40N10-25 Vishay Siliconix N-Channel 100-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74211

Abstract: Si3475DV
Contextual Info: SPICE Device Model Si3475DV Vishay Siliconix P-Channel 200-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Photodiodes

Abstract: solar photodiodes TO66 PLASTIC package S6468
Contextual Info: Custom Photodiodes Multielement Types, Built-in Pre-amp Types, TE-cooled Types, etc. In addition to a wide range of devices listed in this catalog, Hamamatsu provides a variety of custom devices including multielement photo­ diodes, photodiodes with built-in preamplifiers and thermoelectrically-cooled photodiodes, with specifications and configurations matching your

Contextual Info: Si Photodiodes with Pre-amp Type No. Active Area Feature mm S1406 Series 2.4 X S5590 2.4 X S5591 5.8 X Uses a photodiode chip of the S1226 or S1336 series and a borosilicate glass or quartz glass 2.4 window. Low noise operation suitable for precision measurement at low-light-level.

74219

Abstract: SiE812DF
Contextual Info: SPICE Device Model SiE812DF Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range