SI3475DV Search Results

Si3475DV

Contextual Info: SPICE Device Model Si3475DV Vishay Siliconix P-Channel 200-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si3475DV Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω) ID (A)a 1.61 at VGS = - 10 V - 0.95 1.65 at VGS = - 6 V - 0.93 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

74249

Contextual Info: Si3475DV Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω) ID (A)a 1.61 at VGS = - 10 V - 0.95 1.65 at VGS = - 6 V - 0.93 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

74249

Abstract: Si3475DV Si3475
Contextual Info: Si3475DV Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω) ID (A)a 1.61 at VGS = - 10 V - 0.95 1.65 at VGS = - 6 V - 0.93 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

c 2437 power mosfet

Abstract: AN609 Si3475DV
Contextual Info: Si3475DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74211

Abstract: Si3475DV
Contextual Info: SPICE Device Model Si3475DV Vishay Siliconix P-Channel 200-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74249

Abstract: SI3475 Si3475DV
Contextual Info: Si3475DV Vishay Siliconix New Product P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 rDS(on) (Ω) ID (A)a 1.61 at VGS = - 10 V - 0.95 1.65 at VGS = - 6 V - 0.93 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 8 nC RoHS

74249

Abstract: P-Channel 200V MOSFET TSOP6 Si3475DV
Contextual Info: Si3475DV Vishay Siliconix New Product P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 rDS(on) (Ω) ID (A)a 1.61 at VGS = - 10 V - 0.95 1.65 at VGS = - 6 V - 0.93 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 8 nC RoHS

Contextual Info: Si3475DV Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω) ID (A)a 1.61 at VGS = - 10 V - 0.95 1.65 at VGS = - 6 V - 0.93 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

SI3475

Abstract: 74249
Contextual Info: Si3475DV Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω) ID (A)a 1.61 at VGS = - 10 V - 0.95 1.65 at VGS = - 6 V - 0.93 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

74249

Abstract: si3475dv
Contextual Info: Si3475DV Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω) ID (A)a 1.61 at VGS = - 10 V - 0.95 1.65 at VGS = - 6 V - 0.93 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

BS250KL

Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
Contextual Info: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs