S6202 Search Results

lithium* protection overdischarge

Abstract: 12v lithium ion battery S-6202 VM330
Contextual Info: Preliminary S6202 Semiconductor BATTERY PROTECTION IC FOR 1-CELL PACK General Description This is a battery protect solution IC which is integrated the protection IC developed for 1-cell series use in lithium Ion/lithium polymer rechargeable batteries and dual common drain N-channel MOSFET. It functions to protect the

Contextual Info: S6202 Data Sheet SiC Schottky Barrier Diode Bare Die VR 650V IF 10A*1 15nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type

Contextual Info: Preliminary S6202 Semiconductor BATTERY PROTECTION IC FOR 1-CELL PACK General Description This is a battery protect solution IC which is integrated the protection IC developed for 1-cell series use in lithium Ion/lithium polymer rechargeable batteries and dual common drain N-channel MOSFET. It functions to protect the

SiE812DF

Abstract: SiE812DF-T1-E3
Contextual Info: SiE812DF Vishay Siliconix New Product N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package

L9939

Abstract: B897 k9920 L9924 k1917 JESD22-B100 K9928 K2837 P9848 h9910
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS October 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT October 1999 TABLE OF CONTENTS Section I: Introduction Section II:

D2061 transistor

Abstract: B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064
Contextual Info: ORDER NO. MD0604120A3 DVD Stereo System SA-VK650GCP Colour S . Silver Type Please use this manual together with the service manual for Model No. [SA-VK650GC/GN/GS/GCS/GCT-S, Order No. MD0604118C3]. Specifications n SYSTEM SC-VK650(GCP) Notes: Music Center: SA-VK650 (GCP)

h9740

Abstract: k1917 B934 L9726 Y9846 H9817 n9831 l9735 9806 9826 320
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS January 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT January 1999 TABLE OF CONTENTS Section I: Introduction Section II:

SiE812DF

Abstract: SiE812DF-T1-E3
Contextual Info: SiE812DF Vishay Siliconix New Product N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package

l9938

Abstract: K9950 h9940 l9923 L9939 l9940 z9936 z9939 l9934 PQFP208 drawing
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS October 2000 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT October 2000 TABLE OF CONTENTS Section I: Introduction Section II:

h9910

Abstract: K9930 L9938 PB44 L9939 h9940 L9924 Z178 K2837 K3296
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS April 2000 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT April 2000 TABLE OF CONTENTS Section I: Introduction Section II:

pj 899 diode

Abstract: B897 K9814 k1917 JESD22-B100 B953 L9833 N9808 P9812 9806
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS April 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT April 1999 TABLE OF CONTENTS Section I: Introduction Section II:

Contextual Info: SiE812DF Vishay Siliconix New Product N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for COMPLIANT Double-Sided Cooling • Leadframe-Based New Encapsulated Package

L9939

Abstract: k9920 h9910 K1917 L9924 K2837 B897 k3296 JEDEC-22-A113-A K9926
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS October 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT October 1999 TABLE OF CONTENTS Section I: Introduction Section II:

K2837

Abstract: h9910 pj 899 diode l9845 k1917 B897 74100 ipc 9850 74FST163245 L9726
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS JULY 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT July 1999 TABLE OF CONTENTS Section I: Introduction Section II:

h9910

Abstract: h9940 L9939 z9939 l9923 hyundai 9734 ram K9930 l9934 733W K2837
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS January 2000 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT January 2000 TABLE OF CONTENTS Section I: Introduction Section II:

h9910

Abstract: 74FST163245 B897 PL84 K2837 9806 h9910 datasheet ipc 9850 pj 899 diode JEDEC-22-A113-A
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS JULY 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT July 1999 TABLE OF CONTENTS Section I: Introduction Section II:

SC-70-6

Abstract: SiA911DJ SiA911DJ-T1-E3
Contextual Info: SiA911DJ Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.094 at VGS = - 4.5 V - 4.5a 0.131 at VGS = - 2.5 V - 4.5a 0.185 at VGS = - 1.8 V - 4.5a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

SiB411DK

Abstract: SC75 SiB411DK-T1-E3
Contextual Info: SiB411DK Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.066 at VGS = - 4.5 V - 9a 0.094 at VGS = - 2.5 V - 9a 0.130 at VGS = - 1.8 V - 9a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

Contextual Info: Si8429DB Vishay Siliconix New Product P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 11.7 0.042 at VGS = - 2.5 V - 10.7 0.052 at VGS = - 1.8 V - 9.6 0.069 at VGS = - 1.5 V - 8.3 0.098 at VGS = - 1.2 V