S3A3 Search Results

Lasertron qlm

Abstract: s3a3
Contextual Info: LASERTRW INC MSE „ q s3a33ss D GQ 0272 2 m iS R T-HI-01 Qa.PiaB^a^ 2.5 mW 1300 nm Laser • H H ■ H Telecom access and junction applications 2.5 mW rated output power 1300 nm wavelength High-reliability RWG laser chip Cooled 14-pin DIL package, 501125 nm multimode fiber

thermistor 054

Contextual Info: 4SE LASERTRON INC J> m S3A33S5 0000205 5 Ö L S R J - Lj -cq QLID35S<D2 5 & 8 nW Cooled LED Telecom access and junction applications 5 fiW and 8 fiW rated output pow ers available 1300 nm wavelength Cooled 14-pin DIL package, single-mode fiber Description

pinFET

Abstract: cascode transimpedance Lasertron detector QDFH-9003
Contextual Info: LASERTRON INC MSE D S3A335S G0G0310 b ES LSR T ~ y / ~ 5 & Q 1D F K 3 High-lm pedance Integrating pinFET Receiver B B 3 H H Telecom trunk and junction applications High-impedance integrating circuit configuration Data rates up to 1.0 Gb/s Industry-standard 14-pin DIL package

CW003

Abstract: anaa s3a3 310HM 33dd
Contextual Info: Q I20IMS =91=1 ümmONiMvaa 'A]d im »Ç + n o i yvnnoN V S 9300T S t 0TQQ mm a ik 06X93 H3SJ I Q3A0yddV nmm S IO 'O t saiaas aa ’S T N 31V0S n o i iV H io ia r a o o ’ o in o j^ is o d ^ o a u T io o ’M A A i q3 M 3 13V 1N 03 m i l - [m ] XtOL o ç i'o

P2T-3

Abstract: k 3436 transistor
Contextual Info: r z 7 S C S -T H O M S O N È HCC/HCF40182B LOOK-AHEAD CARRY GENERATOR • GENERATES HIGH-SPEED CARRY ACROSS FOUR ADDERS OF ADDER GROUPS ■ HIGH-SPEED OPERATIONAL : t p H L = tPLH = V dd = 10V EY Plastic Package Ml (Micro Package) June 1989 C1 (Plastic Chip Carrier)

Solitron J775-2

Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
Contextual Info: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188

DD3150

Abstract: 316 bcg 563-HH-3421-BC A42 BF 331 531002b00000g to220 mica 1591-TSBK NG-9512E 131-6 wj 78 1554d
Contextual Info: ENCLOSURES AND THERMAL Plastic Enclosures Altech. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1866, 1867 Bud . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1868, 1869, 1870, 1871, 1872, 1873 Bulgin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1874

w83 323

Abstract: W83L517 R5C576
Contextual Info: S c h e m a tic D ia g ra m s Appendix B:Schematic Diagrams Mainboard S h e et 1 o f 27 P A G E !-B L O C K D IAG R AM PAGE2 -C LO C K GENERATOR PAGE3 -C P U CK-TITAN CLOCK Generator PAGE7 -GM CK 133 MHz AGTL P SB LCD PANEL ATI VG A AGP 4X M o b i l i ty-P6

MH1SS1

Abstract: MHB4011 MH5400S Katalog tesla diod C520D A244D MAC198 MA3006 KF520 B260D
Contextual Info: Prehled diskrétních polovodicovÿch soucástek a dalsích dovâzenÿch typú z nèkdej si RVHP TRANZISTORY TYRISTORY • TRIAKY • DIAKY DIODY • LED • DISPLEJE OPTOCLENY a dalsí prvky . spolu s náhradami . a nej pouzívanéj sí standardní zahranicní soucástky

Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0_ “ 2.8 0.14 0.48 0.38 3 2.6 2.4 1.02 7>.8<T 2.00 0.60 0.40 1.80 Marking CMBZ5230B 31B

ch cs s101 d

Contextual Info: TOSHIBA TLCS-900 Series TMP96C081F CMOS 16-bit Microcontrollers TMP96C081F 1. Outline and Device Characteristics The TMP96C081F are high-speed advanced 16-bit microcon­ trollers developed for controlling medium to large-scale equip­ ment. The TMP96C081F are housed in a 100-pin flat package.

Contextual Info: Vm to -s-f 96ES5IS ivoNsatJosra mu 138 mm sod N33H3 f ia ’SIN *d n i s a m x s n a N i u3annN snwwq 3iva Jfl EAOMdctf Nnwua 3TVDS u i o o ’o r a o j ^ i s o d ^ o a u u o o ’m m m noLwinsiw Liieoj sio 'Ot Tonvnma . 3 IN 0 H X IS 0 J NMVd 310H 13V1N00

CSA1012

Abstract: CSC2562
Contextual Info: CSA1012, CSC2562 CSA1012 CSC2562 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR High Current Switching Applications •E oa ai DIM A B C E F G H J K L M N MIN MAX 16.51 10.67 4,83 0.90 1.15 1,40 3,75 3.88 2,29 2.79 2.54 3.43 0,56 12.70 14,73 6,35

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

310HM

Contextual Info: E Ï 2 0 Ï 3ümm S ONiMvaa 'A]d =91=1 »Ç + n o i y vn n o N V 3 iv a ^ mm a ik 06X 93 H 3 S J QlAOdddV O T0 saiaas aa ’S T N + n o i iV H io ia 11V0S nmm r a o o ’ o in o j^ is o d ^ o a u T io o ’M A A i m m i 13V1N03 31VH3J XtOL - [ m ] o ç i'o

T125 5E4

Abstract: T125 V5B120CB3 250V-T125
Contextual Info: LATALOGLE o gl o Lü _l D SWITCH - BASIC " t L \ V A V, \//LQL CL LISTING V5B120CB3 < o in CO ca O o Q 0.3 OJ +0. 2 m 0 I . 65 LO LÜ LO > -0 HOLE IN TERMINALS U < 2 _l CL LÜ GL + . I 0RE0RAVE0 LO K~) LO 0 3 . I - 0 . 0 5 HOLE LO z cc M LU s m <2 4 . 3 +0 5

Semicon volume 1

Abstract: HVC-50F s5a1 LTA 902 sx
Contextual Info: Pulse Rated 5W Zener Diode FEATURES • 1200 WATTS PEAK POWER • 5 WATTS @ 75°C AME5IENT • SURGE RATED • LOW FORWARD VO LTAG E DROP • COLD CASE DESIGN (M OLDED) • H IG H TEM PERATURE OPERATION • SPECIAL M A TC H IN G A V A ILA B LE Semicon TZC Zener diodes are high grade Solid State Voltage

BYX71-600

Abstract: BYX71-350 philips BYX71-600 BY208 BYX71 MDA2501 Solitron J775-2 30S8 BY198 GI DL005
Contextual Info: RECTRON SEMICONDUCTOR INDUSTRIAL Part No. 40266 40267 1.5KE10 1.5KE10 1.5KE10 1.5KE100 1.5KE100 1.5KE100 1.5KE100A 1.5KE100A 1.5KE100A 1.5KE10A 1.5KE10A 1.5KE10A 1.5KE11 1.5KE11 1.5KE11 1.5KE110 1.5KE110 1.5KE110 1.5KE110A 1.5KE110A 1.5KE110A 1.5KE11A 1.5KE11A

T125

Abstract: V5C110BB3 9n15
Contextual Info: LATALOGLE LISTING o SWITCH - BASIC gl CL V5C110BB3 Lü D _l < o o in CO m m o 0.3 £1 + O LO > LO LÜ O < 0.2 0 I .65 -° HOLE IN TERMINALS 3 _l CL LÜ GL + 0. I0 03. I -0.05 HONE PRETRAVEN z cc l-H LU s m < 2 CCD QZ cr LÜ Lü 3 LO en en cr REVISIONS 3 5.5.92

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

S3A1

Abstract: 1N3492
Contextual Info: SEMICONDUCTOR PRODUCTS CATALOG SWEETWATER AVENUE • P. O. BOX 328 • BEDFORD • MASSACHUSETTS • AREA CODE 617 275-8542 T o v i i i h a n d C o m liC io n ^ o f B a le T e rm s o f P a y m e n t Domestic — net 30 days if credit has been arranged. Where credit is not established, payment must be re­

A7E1

Contextual Info: O K I semiconductor M S M 5 1 1 0 0 0 B /B L 1,048,576-W ord x 1-Bit DYNAM IC RAM GENERAL DESCRIPTION The MSM511000 B/BL is a new generation dynamic RAM organized as 1,048,576-words x 1bit. The technology used to fabricate the MSM511000 B/BL is OKI's CMOS silicon gate process technology. The