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    9N15 Search Results

    9N15 Datasheets (1)

    Shikues Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge SK09N150-T7
    Shikues Semiconductor BVDSS RDS(ON), typ. ID, TO-247, VDSS, VGS ±30V Original PDF
    SF Impression Pixel

    9N15 Price and Stock

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    Rochester Electronics LLC MTB29N15ET4

    N-CHANNEL POWER MOSFET
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    DigiKey MTB29N15ET4 Bulk 47,200 149
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    Infineon Technologies AG IPT039N15N5ATMA1

    OPTIMOS 5 POWER MOSFET
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    Rochester Electronics IPT039N15N5ATMA1 3,356 1
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    Infineon Technologies AG IPT059N15N3ATMA1

    MOSFET N-CH 150V 155A 8HSOF
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    Mouser Electronics () IPT059N15N3ATMA1 2,855
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    IPT059N15N3ATMA1 2,855
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    Rochester Electronics IPT059N15N3ATMA1 46,428 1
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    Rochester Electronics LLC UPC79N15H-AZ

    IC REG LINEAR FIXED STNDRD REG
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    ABLIC Inc. S-1009N15I-M5T1U

    IC SUPERVISOR 1 CHANNEL SOT23-5
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    9N15 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    OST-9N15

    Abstract: color sensitive PHOTO TRANSISTOR OST9N15 transistor d 1303
    Contextual Info: OST-9N15 PHOTO TRANSISTOR • General Description The OST-9N15 is high sensitivity NPN silicon photo-transistor mounted in a SMD plastic package. ■ Features ˙Compact ˙Wide angular response ˙Low cost ˙Meet RoHS ■ Applications ˙Optical counters ˙Optical detectors


    Original
    OST-9N15 OST-9N15 100uA 72hrs. 24hrs) 45min 30min) color sensitive PHOTO TRANSISTOR OST9N15 transistor d 1303 PDF

    Contextual Info: 9N150 N-channel 1500 V - 1.8 Ω - 8 A - TO-247 very high voltage PowerMESH Power MOSFET Features Type VDSS RDS on ID Pw 9N150 1500 V < 2.5 Ω 8A 320 W • 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances


    Original
    STW9N150 O-247 PDF

    9N150

    Abstract: STW9N150 8A720 JESD97 9n15
    Contextual Info: 9N150 N-channel 1500 V - 1.8 Ω - 8 A - TO-247 very high voltage PowerMESH Power MOSFET Features Type VDSS RDS on ID Pw 9N150 1500 V < 2.5 Ω 8A 320 W • 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances


    Original
    STW9N150 O-247 9N150 STW9N150 8A720 JESD97 9n15 PDF

    EF 9364

    Abstract: 3E29 9n15
    Contextual Info: 1 1 997299FA 9 234567859ABCD1 1 1 DEFF1B3917B41C3291BFE4111 93239 9 9 D 1 B& $14 !1 19 ! +7&7E7"(9 199997&437E979)FF9*9 19 +


    Original
    234567859ABCD1 1C329 1BFE41 95DEE 9388D 9E719 9E7607D 97B94 957495E7 496D44 EF 9364 3E29 9n15 PDF