S300N Search Results

IC MARKING A60

Abstract: IC 741 cn
Contextual Info: fa427S25 0D452bl *NECE MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 9 0 0 L ,4 2 S 1 7 9 0 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O DE P R E L IM IN A R Y DESCRIPTIO N The NEC # PD42S16900L and n PD42S17900L are 2 097 152 words by 9 b its dynamic CMOS RAM

IRF013

Abstract: D33A power MOSFET IRF610 1RF610 irf610 samsung irf610 mosfet IRF61Q irf610 613 33A
Contextual Info: N-CHANNEL POWER MOSFETS IRF610/611/612/613 FEATURES TO-220 • Lower R d s ON • Improved inductive ruggedness • Fast switching times • • • • Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

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DA RH

Abstract: S810N
Contextual Info: powinpe/£¿60frdwD/9U]oq/ 9 N I M V d Q L dO d 3 H L 0 1 S n 0 <3> 17 133HS 680980 s^ooi-ayvoa ON ONIMVdQ HOSd 33ds l o n a o d d oovoNdaod 26A62A0 I 3 1 3 V ld 3 3 3 d SOL¿ L ’D d ' ß j n q s ! J J D H a3 iv a od ao o Ni duv HS INId 1 NO 0 3d / i h u m

Contextual Info: 8-CHANNEL SOURCE D RIVERS U D N 2580A and U D N 2585A This versatile family of integrated circuits will work with many combinations of logic- and load-voltage levels, meeting interface requirements beyond the capabilities of standard logic buffers. Series

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Contextual Info: bMS7SaS DOMSSSÜ 84T B N E C E MOS INTEGRATED C IR CU IT /¿PD42S16160,42S17160,42S18160 16 M BIT D Y N A M IC RAM FAST PAGE M O D E & BYTE R E A D /W R IT E M O DE - P R E L I M I N A R Y -DESCRIPTIO N The NEC ; ì PD42S16160, ¿¿PD42S17160 and /¿PD42S18160 are 1 048 576 words by 16 b it s dynamic

Contextual Info: I X Y S CORP IflE D 4bflb22b GOOOfc.34 b PIXYS I X T E 14 N 40 X 4 MAXIMUM RATINGS PER DEVICE IXTE14N40X4 Sym. Drain-Gate Voltage (Rqs = I.OMO)(1) Voss Vdc Vd g r 400 Vdc Vgs Vdc Vgsm ±3 0 V Gate-Source Voltage Continuous Gate-Source Voltage Transient Drain Current Continuous (To = 25,C)

4000 SERIES CMOS

Contextual Info: HARRIS SENICOND SECTOR 43E 7 ^ 5 2 - 1 IH6201 4305571 D 003bfl5fl 8 B I H A S IH6201 H A R R IS S E M I C O N D U C T O R Dual CMOS Driver/Voltage Translator GENERAL DESCRIPTION FEATURES The IH6201 is a CMOS, Monolithic, Dual Voltage Transla­ tor; it takes low level TTL or CMOS logic signals and con­

HD-20

Contextual Info: poajojpe/e^^diüD/^o^dep/tzO^sp/pg^OAJSS/eujoq/ 9 N IM V d d L8 0 L z U _ L " t7 133HS 31V0S 02-QH 3000 30VO 03dS 3 Z I5 wi31IHIldHV NOIlVOIdddV Odds 5 >]3 0 1 M 3 d 3 5 QddV QddV »HO Z6~f r ~Z dWV O N IlN fìO N d O lO dN N O O OdVOd Od dA1 OddNdWWOOdd dA1

DPAC

Contextual Info: MJD112 NPN SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I PACK, “ - 1 ” Suffix) Electrically Similar to Popular TIP112

K 1723

Abstract: S35099-5
Contextual Info: poiuujpe/e¿60t7diuD/eujoq/ £¿60tOuJD gs:62:0L 0N I ñ ¥ d ü L dO d d W O lS O O L <3> 17 1 3 3 HS 30V0S 1 H 0 IdM LO-NVf-t^O ¿8-E A3y £-9S¿ L dWV INOO 660d£d ON ONIMVdQ ON NOSd 3 Z I5 03dS Odds i d n a o d d S O L¿ L ’D d ' ß jn qs iJJDH d31Vd0dd00NI

IXTE12N

Contextual Info: I 1ÔE D X Y S CORP • MböbESb 0G00b33 H □ IX Y S IXTE12N 50X4 MAXIMUM RATINGS PER DEVICE Drain-Source Voltage (1) Drain-Gate Voltage (R q s = I.OMft) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient Drain Current Continuous (To = 25<!C)

Contextual Info: H Y U H O f l l * HY51 V64800A.HY51 V65800A 8MxS, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 8,388,608 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow

8630-3056N

Abstract: MIL-C-24308 d-sub connectors DM53740-1NC DM53743-5000NC 8635-4100 8635-4110 8630-3098N FCI SOURIAU DEM09P SEMA09SN
Contextual Info: D-SUB Series Description Applications • 5 layouts • PCB board and cable version with solder or crimp contacts • Mixed versions available : coax. power. thermocouple. • All types of accessories. For military and aerospace applications. Standards MiL-C 24308C