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    f g megamos

    Abstract: megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE
    Contextual Info: I X Y S CORP 16E 5 IS 4b fit55t Q000563 H H§ I T t-m MODULESand PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested


    OCR Scan     		ofMIL-S-19500 MIL-M-38510. f g megamos megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE PDF

    f g megamos

    Abstract: megamos 13 megamos IXGE75N100Z ID 48 Megamos
    Contextual Info: I X Y S CORP 16E 5 IS 4 b fit55t Q000563 H H§ ITt-m MODULES and PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested


    OCR Scan     		fit55t Q000563 f g megamos megamos 13 megamos IXGE75N100Z ID 48 Megamos PDF

    IXTE12N

    Contextual Info: I 1ÔE D X Y S CORP • MböbESb 0G00b33 H □ IX Y S IXTE12N 50X4 MAXIMUM RATINGS PER DEVICE Drain-Source Voltage (1) Drain-Gate Voltage (R q s = I.OMft) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient Drain Current Continuous (To = 25<!C)


    OCR Scan     		0G00b33 IXTE12N IXTE12N50X4 PDF