PD42S18160 Search Results

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-42S1000LAD32S SERIES 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The MC-42S1000LAD32S series is a 1,048,576 words by 32 bits dynamic RAM module (Small Outline DIMM) on which 2 pieces of 16 M DRAM: ^PD42S18160L are assembled.

4218160-60

Abstract: 4218160 IC-3217 4218160G5 UPD42S18160LE-60 PD42S18160
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S18160, 4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The µ PD42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.

4218160-60

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT _ /IPD42S 1 8 1 6 0 ,4218160 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ^PD42S18160, 4218160 are 1,048,576 words by 16 bits CMOS dynam ic RAMs. The fast page mode

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S18160L, 4218160L 3.3 V OPERATION 16 M BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ^PD42S18160L, 4218160L are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode

M1314

Abstract: PD42S18160 4218160LE-60
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT //PD42S18160, 4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S18160, 4218160 are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.

UPD42S18160G5-70-7-JF

Abstract: UPD42S18160G5707JF uPD42S18160-50 UPD4216160G uPD42S18160G5-50-7JF UPD4216160G5-50 PD42S18160-60 UPD42S18160G5-60-7JF NEC 4216160 UPD4218160G5-80-7JF
Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT / PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D e s c rip tio n The /xPD42S16160, 4216160, 42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The

UPD444

Abstract: UPD444-1 MPD444
Contextual Info: fiPD444 /¿PD444-1 /iPD444-2 /iPD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM DESCRIPTION T h e /LfPD444 is a high-speed, lo w p o w e r s ilic o n gate C M OS 4 0 9 6 b it s ta tic R A M o rg a ­ n ize d 1 02 4 w o rd s b y 4 b its . I t uses DC stable s ta tic c ir c u itr y th ro u g h o u t and th e re ­

D42S18160

Abstract: d42s181 D42S1816 UPD42S18160LG5A-60
Contextual Info: D A T A SHEET / MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 1 6 0 L , 4 2 1 6 1 6 0 L. 4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S16160L, 4216160L, 4 2S 18160L, 4 2 18160L are 1,048, 576 w ords by 16 bits CMOS dynam ic RAMs.

Contextual Info: DATA SHEET M O S INTEGRATED CIRCUIT MC-42S1000LAD32S SERIES 1 M -W ORD BY 32-BIT DYN AM IC RA M M ODULE SO D IM M FAST PAGE MODE Description TheMC-42S1000LAD32S series is a 1,048,576 words by 32 bits dynamic RAM module (Small Outline DIMM) on which 2 pieces of 16 M DRAM: /PD42S18160L are assembled.

Contextual Info: fjPD421x160/L, 42S1x160/L x = 6, 7, 8 1,048,576 x 16-Bit Dynamic CMOS RAM ¿ Y fiW NEC Electronics Inc. Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single power supply. O ptional features

upb426c

Contextual Info: O 1- ' mPB406/406-1/406-2 mPB426/426-1/426-2 NEC NEC Electronics US.A. Ina 1024 W ORD B Y 4-BIT 4096-BIT BIPOLAR T T L PROM M icrocom puter Division i\à " it D escrip tio n ^ The/U.PB406 and /xPB 426 are high-speed, electrically pro­ gram m able, fully decoded 4096-bit T T L read-only m em o­

8080AF

Abstract: UPD8080A 4218160 UPD8080AF A10C UPD8080AF-1 PD8080AF UPD8080AF-2
Contextual Info: /¿PD8080AF mPD8080AF-2 ^fiPD8080AF-1 NEC NEC Electronics U.S.A. Inc. Microcomputer Division /XPD8080AF 8-BIT N-CHANNEL MICROPROCESSOR FAMILY DESCRIPTION T h e / jP D 8 0 8 0 A F is a c o m p le te 8 -b it p aralle l processor fo r use in general purpose d ig ita l c o m p u te r system s. I t is fa b ric a te d on a single LS I c h ip using N -c h a n n e l silicon

UPD5101L

Abstract: 5101L PD5101L PD5101 d5101l 5101L-1
Contextual Info: MPD5101L SEC N E C E le c tr o n ic s U S A In c . m P D 51 o i h Microcomputer Division 1024 BIT 256x4 ST A T IC C M O S RAM DESCR I P T I O N T h e /UPD5101L and p P D 5 1 0 1 L -1 are v e ry lo w p o w e r 1024 b it (2 56 w o rd s b y 4 bits) sta tic C M OS R an d o m Access M e m ories. T h e y m e et th e lo w p o w e r re q u ire m e n ts o f

nec 444 ram

Abstract: PD2114L PD444C MPD444C 2SO 765 PD42S18160 uPD444-3 pd2114 MPD444 nec chic
Contextual Info: fiPD444 /¿PD444-1 /iPD444-2 /iPD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM D ESCR IPTIO N The /LfPD444 is a high-speed, low power silicon gate CMOS 4096 bit static RAM orga­ nized 1024 words by 4 bits. It uses DC stable static circuitry throughout and there­

drc Rotary encoder

Abstract: UPC157C
Contextual Info: Preliminary Application Note TM V850E/MS1 32-/16-Bit Single-Chip Microcontrollers Hardware PPD703100 PPD703101 PPD703102 PPD70F3102 Document No. U14214EJ1V0AN00 1st edition Date Published August 1999 N CP(K) Printed in Japan 1999 [MEMO] 2 Preliminary Application Note U14214EJ1V0AN00

Contextual Info: blE D bM2752S 0034G34 I TflM « N E C E NEC Electronics Inc. N E C E L E C T R O N I C S INC Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single pow er supply. O ptional features

LE-60

Abstract: 42S18
Contextual Info: jtiPD421x160/L, 42S1x160/L x = 6, 7, 8 1,048,576 x 16-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The devices listed below are fast-page dynamic RAMs organized as 1 M words by 16 bits and designed to operate from a single power supply. Optional features

NEC 4216160

Contextual Info: MOS INTEGRATED CIRCUIT f iPD42S16160,4216160,42S18160,4218160 16 M -BIT DYNAM IC RAM 1 M -W ORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The mPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAMs. These differ in refresh cycle and the /iPD42S16160, 42S18160 can execute CAS before RAS self refresh (see

d5101l

Abstract: PD5101L upd5101 5101L-4 mpD5101 5101L
Contextual Info: MPD5101L SEC N E C E le c tr o n ic s U S A In c . m PD51o i h Microcomputer Division 1024 BIT 256x4 STATIC CMOS RAM DESCR I P T I O N T h e /UPD5101L and p P D 5 1 0 1 L -1 are v e ry lo w p o w e r 1024 b it (2 56 w o rd s b y 4 bits) sta tic C M OS R an d o m Access M e m ories. T h e y m e et th e lo w p o w e r re q u ire m e n ts o f

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-42S2000LAD32S SERIES 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The MC-42S2000LAD32S series is a 2,097,152 words by 32 bits dynamic RAM module (Sm all Outline D IM M ) on which 4 pieces of 16 M DRAM: /PD42S18160L are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE The ,PD42S18160L, 4218160L are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and

Contextual Info: N EC MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ HPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 w o rd s by 16 bits d yn a m ic CMOS RAMs.

nec A2C

Abstract: 8160l1
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /PD42S18160L, 4218160L are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and

IC-3217

Abstract: PD42S18160 NEC 4216160 UPD4218160G5-50
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16160, 4216160, 42S18160, 4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The µPD42S16160, 4216160, 42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The