JJPD421 Search Results

3we22

Abstract: 8001P
Contextual Info: blE ]> n e • bllE7SES 0033^02 Tflfl HNECE jjPD421x 800/L, 42S1x800/L w NEC Electronics Inc. NEC ELECTRONICS INC Description The devices listed below are fa s t-p a g e dynam ic RAMs o rganized as 2M words by 8 bits a n d designed to o p e ra te from a single pow er supply. O ptional features

D4217400

Abstract: nec 4217400
Contextual Info: JJPD4216400, 4217400 4,194,304 X 4-Bit Dynamic CMOS RAM M J jW NEC Electronics Inc. Description The ¿/PD4216400 and the /JPD4217400 are fast-page dynamic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili­

nec 4217400

Abstract: nec 4216400 4216400
Contextual Info: N E C ELECTRONICS INC blE D NEC NEC Electronics Inc. • h4275S5 RRb H N E C E JJPD4216400, 4217400 4,194,304 X 4-Bit Dynamic CMOS RAM ~ h Description T he ¿/PD4216400 and the //PD 4217400 are fast-page d ynam ic RAMs organized as 4,194,304 words by 4 bits

UPD4216412

Contextual Info: SEC pPD4216412, 4217412 4,194,304 X 4-Bit Dynamic CMOS RAM NEC Electronics Inc. Advance Information The jjPD4216412 and the ¿¿PD4217412 are staticcolumn dynamic RAMs with write-per-bit organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced polycide tech­

d31010

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-422000F32 2 M -W O R D BY 32-BIT DYNAMIC RAM MODULE HYPER PAGE MODE EDO Description The M C -422000F32 is a 2,097,152 words by 32 bits dynamic RAM m odule on which 4 pieces of 16 M DRAM: jjPD4218165 are assembled.

LE-70

Abstract: LE-60
Contextual Info: SEC JJPD4216101, 4217101 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Advance Information Description The/iPD4216101 and the/jPD4217101 are nibble-mode dynamic RAMs organized as 16,777,216 words by 1 bit and designed to operate from a single +5-volt power

upd42101

Abstract: PD42101 ZXd 27
Contextual Info: NEC jn P D 4 2 1 0 1 Line Buffer for NTSC TV NEC Electronics Inc. Description Pin Configuration The jiPD42101 is a 910-word by 8-bit line buffer fabri­ cated with a CMOS siiicon-gate process. The device helps to create an NTSC flicker-free television picture

UPD4216402

Contextual Info: NEC pPD4216402, 4217402 4,194,304 X 4-Bit Dynamic CMOS RAM NEC Electronics Inc. Advance Information Description The /JPD4216402 and the /JPD4217402 are staticcolumn dynamic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt

Contextual Info: X NEC Electronics Inc. pPD42116x = 420, 820, 920, 162, 182 16-Megablt Synchronous Dynamic CMOS RAM Advance Information Description The juPD42116x is a synchronous DRAM (SDRAM) using a single 3.3-volt power supply and with all input signals synchronized to an external clock. Commands are

PD42101

Contextual Info: NEC ffPD42101 Line Buffer for NTSC TV NEC Electronics Inc. Description Pin Configuration The ¿iPD42101 is a 910-word by 8-bit line buffer fabri­ cated with a CMOS silicon-gate process. The device helps to create an NTSC flicker-free television picture noninterlaced scan conversion by providing intermedi­

Contextual Info: SEC pPD4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The juPD4216100 and the /iPD4217100 are fast-page dynamic RAMs organized as 16,777,216 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili­

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4216400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The /JPD4216400, 4217400 are 4 194 304 w o rd s by 4 bits d yn a m ic CMOS RAMs. These d iffe r in refresh cycle. These are packed in 26-pin plastic TSOP II and 26-pin plastic SOJ.

Contextual Info: fjPD421x160/L, 42S1x160/L x = 6, 7, 8 1,048,576 x 16-Bit Dynamic CMOS RAM ¿ Y fiW NEC Electronics Inc. Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single power supply. O ptional features

Contextual Info: blE D bM2752S 0034G34 I TflM « N E C E NEC Electronics Inc. N E C E L E C T R O N I C S INC Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single pow er supply. O ptional features

nec 4217400

Abstract: 4217400 upd4217400
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4216400,4217400 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿ PD4216400, 4217400 are 4 194 304 w o rd s by 4 b its d yn a m ic CMOS RAMs. These d iffe r in refresh cycle. These are packed in 26-pin plastic TSOP (II and 26-pin plastic SOJ.

SA9C

Contextual Info: SEC fiPD4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description T he juPD4216100 and the /JPD4217100 are fast-page dynam ic RAMs organized as 16,777,216 words by 1 bit and designed to o p e ra te from a single +5-volt power supply. A dvanced polycide technology m inim izes sili­

NEC 4216160

Contextual Info: MOS INTEGRATED CIRCUIT f iPD42S16160,4216160,42S18160,4218160 16 M -BIT DYNAM IC RAM 1 M -W ORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The mPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAMs. These differ in refresh cycle and the /iPD42S16160, 42S18160 can execute CAS before RAS self refresh (see

4623A

Abstract: K311 LE-60 GD34063
Contextual Info: blE » • b427525 0D34G75 flìfl «NECE jiPD421x180/L, 42S1x180/L x = 6, 7, 8 NEC Electronics Inc. 1,048,576 x 18-Bit Dynamic CMOS RAM _N E C ELECTRONICS INC 7~~ '¿U-l# W M li W Description The devices listed below are fast-page dynamic RAMs

D421000

Contextual Info: W H iW * 1 * fiPD421000 1,048,576 x 1-Bit NEC Electronics Inc. Dynamic CMOS RAM April 1992 Description Pin Configurations The ¿/PD421000 is a fast-page dynamic RAM organized as 1,048,576 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced polycide

Contextual Info: ffPD421x900/L, 42S1X900/L x = 6, 7 2,097,152 X 9-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Description The devices listed below are fast-page dynamic RAMs organized as 2M words by 9 bits and designed to operate from a single power supply. Optional features

GX-70

Abstract: C80l ice power 200 asc IN6010
Contextual Info: SEC fiPD421000 1,048,576 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description Pin Configurations The /JPD421000 is a fast-p ag e dynam ic RAM organized as 1,048,576 words by 1 bit and designed to o perate from a s in g ie + 5 -v o lt pow er supply. Advanced polycide

18B-7

Abstract: 18B-8 JJPD42102 JUPD42102
Contextual Info: NEC . NEC Electronics Inc. ffPD42102 Line Buffer for PAL TV Description Pin Configuration The fiPD42102 is a 1,135-word by 8-bit line buffer fabri­ cated with a CMOS silicon-gate process. The device helps to create a PAL flicker-free television picture non­

nec 4217400

Abstract: PD4217400
Contextual Info: SEC fiPD4216400, 4217400 4,194,304 X 4-Bit Dynamic C M O S RAM NEC Electronics Inc. Description The juPD4216400 and the /ljPD4217400 are fast-page dynam ic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single + 5 -vo lt power supply. Advanced polycide technology m inim izes sili­

nec v80

Contextual Info: SEC NEC Electronics Inc. J1PD4216410, 4217410 4,194,304 X 4-Bit Dynamic CMOS RAM Advance information Description The /L/PD4216410 and the ^PD4217410 are fast-page dynamic RAMs with write per-bit organized as 4,194,304 words by 4 bits and designed to operate from a single