JUPD4216100 Search Results

Contextual Info: SEC pPD4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The juPD4216100 and the /iPD4217100 are fast-page dynamic RAMs organized as 16,777,216 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili­

SA9C

Contextual Info: SEC fiPD4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description T he juPD4216100 and the /JPD4217100 are fast-page dynam ic RAMs organized as 16,777,216 words by 1 bit and designed to o p e ra te from a single +5-volt power supply. A dvanced polycide technology m inim izes sili­

4216100

Abstract: sm 0038 PIN DIAGRAM M81B42
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4216100,4217100 16 M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE Description The /iPD4216100, 4217100 are 16 777 216 w o rd s b y 1 b it d y n a m ic CMOS RAMs. These are packed in 26-pin Plastic TSOP II and 26-pin Plastic SOJ.

Contextual Info: NEC MOS INTEGRATED CIRCUIT MPD4216100, 4217100 16M -B IT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCRIPTION The fiPD4216100, 4217100 are 16 777 216 words by 1 bit dynamic CMOS RAMs. They differ in refresh cycle execution. FEATURES • 16 777 216 words by 1 bit organization

Contextual Info: NEC pPD4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Prelim inary Information Description T he /JPD4216100 and the /JPD4217100 are fast-page dynam ic RAMs organized as 16,777,216 words by 1 bit and designed to o p e ra te from a single +5-volt power

uPD4216100

Abstract: 4216100
Contextual Info: NEC ELECTRONICS INC blE » • b4E7S2S 0033^ 34 SES MNECE » ,-y I W NEC Electronics Inc. fiPD4216100, 4217100 16,777,216 x 1-Bit Dynamic CMOS RAM T W Description The pPD4216100 and the /iPD4217100 are fast-page dynamic RAMs organized as 16,777,216 words by 1 bit