RY 552 Search Results

DS-LM3S6965

Abstract: LM3S6965 MR24
Contextual Info: P RE LIMIN A RY LM3S6965 Microcontroller D ATA SHE E T D S -LM3S 6965 - 1 9 7 2 C o p yri g h t 2 0 0 7 L u mi n a ry Mi cro, Inc. Legal Disclaimers and Trademark Information INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH LUMINARY MICRO PRODUCTS. NO LICENSE, EXPRESS OR

7524 Core Memory Sense Amplifier

Abstract: 75233 D 7520 C diagram an 7520 7520 ta 5520
Contextual Info: FAIRCHILD LINEAR INTEGRATED CIRCUITS • 5520/7520 SERIES 11-101 5520/7520 SERIES CORE MEMORY SENSE AMPLIFIERS FAIRCHILD LINEAR INTEGRATED C IR CU ITS G E N E R A L D E S C R IP T IO N — T h e 5 5 2 0 /7 5 2 0 Series D ual M e m o ry Sense A m p lifie rs are designed f o r use in high speed core m e m o ry systems. These

Contextual Info: p PriM 9H 8!! iQ Q Q Revised A ugust 1999 EMICONDUCTGRTM 74F552 Octal Registered Transceiver with Parity and Flags General Description Features The 74F 552 octal transceiver contains tw o 8-bit registers for te m p o ra ry storage o f data flowing in either direction.

LT1086

Contextual Info: LT1086MIG–05 LT1086MIG–05 LT1086MIG–12 MILITARY VERSION PR EL IM INA RY LOW DROPOUT 1.5 AMP POSITIVE VOLTAGE REGULATOR TO–257AA Isolated Metal Package 4.83 0.190 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) FEATURES 10.41 (0.410)

VDB50

Contextual Info: PR EL IM INA RY TetraFET D1011UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss

Contextual Info: PR EL IM INA RY TetraFET D1211UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss

D2019

Contextual Info: PR EL IM INA RY TetraFET D2019UK-p METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss

54ABT125

Abstract: 54*125
Contextual Info: P hilips Sem iconductors M ilita ry Advanced BiCMOS P roducts P roduct specification Quad buffer 3-State FEATURES 54ABT125 • ESD protection exceeds 2000V per MIL STD 883 Method 3015 and 200V per Machine Model • Quad bus interface • 3-State buffers

LM1086 12v

Abstract: LM1086
Contextual Info: LM1086–220M–05 LM1086–05–220M LM1086–12–220M SEME LAB MILITARY VERSION PR EL IM INA RY LOW DROPOUT 1.5 AMP POSITIVE VOLTAGE REGULATOR TO–220 Isolated Metal Package 4.70 5.00 0.70 0.90 FEATURES 3.56 Dia. 3.81 10.41 10.92 13.39 13.64 16.38 16.89

15A Adjustable Positive Voltage Regulator

Abstract: LT1086-12/LT1086H
Contextual Info: LT1086–220M–05 LT1086–05–220M LT1086–12–220M SEME LAB MILITARY VERSION PR EL IM INA RY LOW DROPOUT 1.5 AMP POSITIVE VOLTAGE REGULATOR TO–220 Isolated Metal Package 4.70 5.00 0.70 0.90 FEATURES 3.56 Dia. 3.81 10.41 10.92 13.39 13.64 16.38 16.89

MC34063 step-down

Abstract: dc-dc mc34063 Step-Down, External PNP Saturated Switch 12 v to 5 v MC34063 MC34063 DIP mc34063 constant current seme lab mc34063 equivalent
Contextual Info: IP35063 IP33063 IP34063 S E M E LAB DC-DC CONVERTER CONTROL CIRCUIT TOP VIEW SWITCH COLLECTOR -rn ^ nr ^ SWITCH EMITTER ry TIMING CAPACITOR nr [A DRIVER COLLECTOR FEATURES ] ^pk SENSE I V CC • Low Standby Current COMPARATOR INVERTING INPUT • Current Limiting

D2220

Contextual Info: PR EL IM INA RY TetraFET D2220UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss

d2219uk

Contextual Info: PR EL IM INA RY TetraFET D2219UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss

54ABT125

Contextual Info: P hilips Sem iconductors M ilita ry Advanced BiCMOS P roducts P roduct specification Quad buffer 3-State FEATURES 54ABT125 • ESD protection exceeds 2000V per MIL STD 883 Method 3015 and 200V per Machine Model • Quad bus interface • 3-State buffers

a81s

Abstract: 80C51 83C552 87C552
Contextual Info: P hilips Sem iconductors M ilita ry M icroco n tro lle r P roducts P roduct specification Single-chip 8-bit EPROM microcontroller with 10-bit A/D, capture compare timer, high-speed outputs, PWM CFEATURES 87C552 PIN CONFIGURATION • 80C51 central processing unit

LT1086-12

Abstract: 12V 5A adjustable regulator LT1086
Contextual Info: LT1086–220M–05 LT1086–05–220M LT1086–12–220M SEME LAB MILITARY VERSION PR EL IM INA RY LOW DROPOUT 1.5 AMP POSITIVE VOLTAGE REGULATOR TO–220 Isolated Metal Package 4.70 5.00 0.70 0.90 FEATURES 3.56 Dia. 3.81 10.41 10.92 13.39 13.64 16.38 16.89

CSM 6850

Abstract: mg80960xa 80960XA BV EI 303 3628 80960CA 80960KA 80960KB 80960MC M8259A 77106
Contextual Info: 80960XA EMBEDDED 32-BIT MICROPROCESSOR WITH 33RD TAG BIT TO SUPPORT OBJECT-ORIENTED PROGRAMMING AND DATA SECURITY M ilita ry • Implements JIAWG 32-Bit ISA Standard ■ High-Performance Embedded Architecture — 25 MIPS Burst Execution at 25 MHz — 9.4 MIPS* Sustained Execution at

Contextual Info: LM1086–220M–05 LM1086–05–220M LM1086–12–220M S EM E LA B MILITARY VERSION PR EL IM INA RY LOW DROPOUT 1.5 AMP POSITIVE VOLTAGE REGULATOR TO–220 Isolated Metal Package 4.70 5.00 0.70 0.90 FEATURES 3.56 Dia. 3.81 10.41 10.92 13.39 13.64 16.38 16.89

d 4464 c

Contextual Info: 552 EHSemiconductor National 54F/74F552 Octal Registered Transceiver with Parity and Flags General Description T h e 'F552 octa l transceiver co ntains tw o 8-bit registers fo r te m p o ra ry storage o f data flow ing in e ithe r direction. Each register has its own clo ck pulse and clo ck enable input as

MQ80960MC

Abstract: LADT4 MQ80960MC-25/B MG80960MC 80960MC MQ80960MC-20/B DIODE 255 KO Intel 80960kb programmers reference LA01 80960KA
Contextual Info: in te i 80960M C EMBEDDED 32-BIT MICROPROCESSOR WITH INTEGRATED FLOATING-POINT UNIT AND MEMORY MANAGEMENT UNIT M ilita ry High-Performance Embedded Architecture — 25 MIPS Burst Execution at 25 MHz — 9.4 MIPS* Sustained Execution at 25 MHz On-Chip Floating-Point Unit

intel 8051 timing characteristics

Abstract: 2001 NVRAM 18-PIN SC22100CN SC22101 Micron TLC intel 8185
Contextual Info: SIERRA SEMICONDUCTOR High Endurance Electrically Erasable, Prog. Memories The SC22100 is a 32 by 8 256-bit , 5-Volt programmable non-volatile, parallel access mem ory built with S ierra's p ro p rieta ry 2 m icron CMOS floating gate process. Data and address lines are multiplexed,

E138034

Abstract: bdx 540 bdx 538 UL444 NS100N BDX 71 0 261 230 134 bdx 545 BDX 58
Contextual Info: @ RELEÁáH IS UWPUBU5HBB. COPYRIGHT 19 BY AMP m P-UBUóÁTIÓkl- TFT LOC - ALL RIfiHTS RESERVED. INCORPORATED. DI5T REVISIONS EH CA T EG D RY 5e PERFORMANCE C H A R A C TE R IS TIC S FREQUENCY ATTENUATION MHz) D (dB/lOOn) MAXIMUM NEXT PSNEXT

relay driver

Abstract: 2wire 4wire telephone
Contextual Info: HC-5524 Semiconductor F e b ru a ry 1999 D a ta S h e e t F ile N u m b e r 2 7 9 8 .6 Features EIA/ITU 24V PABX SLIC with 25mA Loop Feed • Dl Monolithic High Voltage Process The HC-5524 telephone Subscriber Line Interface Circuit integrates most of the BORSCHT functions on a monolithic

Contextual Info: v3.0 CorePCI Target 33/66 MHz Pr od u c t S u mm a ry Version Intended Use This data sheet defines the functionality of Version 5.1 of the CorePCI macro. • High-Performance PCI Target Applications – 32/64-Bit, 66MHz, 3.3V Section – 32/64-Bit, 33MHz, 5V or 3.3V