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    fm25v05-g

    Abstract: FM25V05 fm25v05g
    Contextual Info: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		fm25v05512kbfm25vn05fm25v05-g+4fm25vn05-gfm25v05-gtrfm25vn05-gtrfm25v05g PDF

    RG5V02

    Abstract: fm25v02
    Contextual Info: Pre-Production FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		fm25v02256kbfm25vn02fm25v02-g+7fm25vn02-gfm25v02-gtrfm25vn02-gtrfm25v02-dgfm25vn02-dgfm25v02-dgtrrg5v02 PDF

    FM25V02

    Contextual Info: FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		fm25v02256kbfm25vn02fm25v02-g+6fm25vn02-gfm25v02-gtrfm25vn02-gtrfm25v02-dgfm25vn02-dgfm25v02-dgtr PDF

    FM24V10-G

    Abstract: FM24VN10-G megabit FM24V10 FM24VN10 AEC-Q100-002 FM24V10G
    Contextual Info: Pre-Production FM24V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		fm24v10overhean10-ga9646447ric1011+8fm24v10-gfm24vn10-gfm24v10-gtrfm24vn10-gtrmegabitfm24vn10aec-q100-002fm24v10g PDF

    Contextual Info: FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface


    Original     		fm24v02256kbfm24vn02100khz PDF

    RG5V02

    Abstract: FM25V02 FM25V02-GTR FM25V02-G fm25v02gtr
    Contextual Info: FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		fm25v02256kbfm25vn02fm25v02-g+8fm25vn02-gfm25v02-gtrfm25vn02-gtrfm25v02-dgfm25vn02-dgfm25v02-dgtrrg5v02fm25v02gtr PDF

    FM25V10

    Abstract: fm25v10-g FM25V fm25v10g fm25vn10-g
    Contextual Info: FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		fm25v10fm25vn10temperafm25v10fm25v10-g+5fm25vn10-gfm25v10-gtrfm25vn10-gtrfm25vfm25v10g PDF

    Contextual Info: Pre-Production FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		fm24v02256kbfm24vn02100khz+4fm24v02-gfm24vn02-gfm24v02-gtrfm24vn02-gtr PDF

    Contextual Info: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		fm25v05512kbfm25vn05fm25v05-g+3fm25vn05-gfm25v05-gtrfm25vn05-gtr PDF

    Contextual Info: FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		fm24v02256kb256kbitoverhea/25/2010+4fm24v02-gfm24vn02-gfm24v02-gtrfm24vn02-gtr PDF

    Contextual Info: FM24V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		fm24v10fm24v10-gfm24vn10-gfm24v10-gtr+1fm24vn10-gtr PDF

    Contextual Info: FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		fm25v10fm25vn10t9/2008fm25v10-g+3fm25vn10-gfm25v10-gtrfm25vn10-gtr PDF

    FM25VN10-G

    Abstract: FM25V10 FM25V10-G FM25VN10 FM25V10-GTR FM25V10gtr AEC-Q100-002 fm25v
    Contextual Info: Pre-Production FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		fm25v10fm25vn10fm25v10-gfm25vn10-g+5fm25v10-gtrfm25vn10-gtrfm25v10gtraec-q100-002fm25v PDF

    Contextual Info: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM Organized as 65,536 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI


    Original     		fm25v05512kb PDF

    Contextual Info: Pre-Production FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		fm25v05512kbfm25vn05configuration16+4fm25v05-gfm25vn05-gfm25v05-gtrfm25vn05-gtr PDF

    FM25V10-G

    Abstract: fm25v10
    Contextual Info: Pre-Production FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		fm25v10fm25vn10fm25v10-gfm25vn10-g+2fm25v10-gtrfm25vn10-gtr PDF

    Contextual Info: FM24V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		fm24v05512kbfm24vn05100khz+4fm24v05-gfm24vn05-gfm24v05-gtrfm24vn05-gtr PDF

    Contextual Info: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		fm25v05512kbfm25vn05industria5/25/2010+4fm25v05-gfm25vn05-gfm25v05-gtrfm25vn05-gtr PDF

    FM24V02G

    Abstract: FM24VN02 AEC-Q100-002 FM24V02
    Contextual Info: Pre-Production FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		fm24v02256kb256kbitoverhefm24v02+7fm24v02-gfm24vn02-gfm24v02-gtrfm24vn02-gtrfm24v02gfm24vn02aec-q100-002 PDF

    FM25V02-G

    Abstract: FM25V02-GTR FM25V02 RG5V02 FM25VN02 AEC-Q100-002 C3H marking fm25v02gtr
    Contextual Info: Pre-Production FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		fm25v02256kb256-kilobitfm25v02-g+10fm25vn02-gfm25v02-gtrfm25vn02-gtrfm25v02-dgfm25vn02-dgrg5v02fm25vn02aec-q100-002c3h markingfm25v02gtr PDF

    Contextual Info: FM24V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM Organized as 65,536 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface


    Original     		fm24v05512kb100khzfm24v0ess PDF

    Contextual Info: FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		fm24v02256kbfm24vn02100khz+4fm24v02-gfm24vn02-gfm24v02-gtrfm24vn02-gtr PDF

    FM24V05

    Contextual Info: Pre-Production FM24V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		fm24v05512kbfm24vn05100khz+4fm24v05-gfm24vn05-gfm24v05-gtrfm24vn05-gtr PDF

    fm24v10-g

    Abstract: fm24vn10-g RIC1011 FM24V10G
    Contextual Info: FM24V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		fm24v10fm24vn10100khzfm24v10-g+5fm24vn10-gfm24v10-gtrfm24vn10-gtrric1011fm24v10g PDF