FM25V Search Results

fm25v05-g

Abstract: FM25V05 fm25v05g
Contextual Info: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25V02 256-Kbit 32 K x 8 Serial (SPI) F-RAM 256-Kbit (32 K × 8) Serial (SPI) F-RAM Features Functional Overview • 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

RG5V02

Abstract: fm25v02
Contextual Info: Pre-Production FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM25V02

Contextual Info: FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 64K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25V10

Abstract: FM25V10-G FM25VN10 25VN10
Contextual Info: Preliminary FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 128K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25V02

Abstract: FM25VN02 FM25V02-G
Contextual Info: Preliminary FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25V05

Abstract: FM25V05-G
Contextual Info: Preliminary FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 64K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25V05

Abstract: FM25L512 25V05 AN309
Contextual Info: AN309 Differences in FM25L512 and FM25V05 Applies to 512Kb SPI F-RAM Devices DESCRIPTION This document points out the differences the FM25L512 and FM25V05 F-RAM devices. For most designs, the FM25V05 device can be considered a superset of the FM25L512. The two devices are

Contextual Info: FM25V10 1-Mbit 128 K x 8 Serial (SPI) F-RAM 1-Mbit (128 K × 8) Serial (SPI) F-RAM Features Functional Overview • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

RG5V02

Abstract: FM25V02 FM25V02-GTR FM25V02-G fm25v02gtr
Contextual Info: FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25V20 2-Mbit 256 K x 8 Serial (SPI) F-RAM 2-Mbit (256 K × 8) Serial (SPI) F-RAM Features Functional Overview • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

FM25V10

Abstract: fm25v10-g FM25V fm25v10g fm25vn10-g
Contextual Info: FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

marking c2h

Abstract: RG5V20 FM25V20-G
Contextual Info: Pre-Production FM25V20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM • Organized as 256K x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25V20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM • Organized as 256K x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM25VN10-G

Abstract: FM25V10 FM25V10-G FM25VN10 FM25V10-GTR FM25V10gtr AEC-Q100-002 fm25v
Contextual Info: Pre-Production FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25V01

Abstract: FM25V01-G FM25VN01 FM25V01-GTR marking 0BH AEC-Q100-002 FM25VN01-G
Contextual Info: Preliminary FM25V01 128Kb Serial 3V F-RAM Memory Features 128K bit Ferroelectric Nonvolatile RAM • Organized as 16,384 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25V01

Abstract: FM25VN01 FM25CL64 AN311
Contextual Info: AN311 FM25V01 Replaces Two FM25CL64s Upgrade Your Board with new F-RAM Device DESCRIPTION The new FM25V01 is a new 128Kbit SPI F-RAM memory which extends the V-family to a lower density. This technical brief highlights the differences between the FM25V01 and FM25CL64 64Kbit devices,

FM25V02

Abstract: FM25V02 -G AN308 FM25L256B DIFFERENCE AN308
Contextual Info: AN308 Differences in FM25L256B and FM25V02 Applies to 256Kb SPI F-RAM Devices DESCRIPTION This document points out the differences the FM25L256B and FM25V02 F-RAM devices. For most designs, the FM25V02 device can be considered a superset of the FM25L256B. The two devices are

Contextual Info: FM25V20A 2-Mbit 256 K x 8 Serial (SPI) F-RAM 2-Mbit (256 K × 8) Serial (SPI) F-RAM Features Functional Overview • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM Organized as 65,536 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI

Contextual Info: FM25V20 2-Mbit 256 K x 8 Serial (SPI) F-RAM 2-Mbit (256 K × 8) Serial (SPI) F-RAM Features Functional Overview • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes