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    25VN10 Search Results

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    25VN10 Price and Stock

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    Infineon Technologies AG FM25VN10-G

    IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
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    TME FM25VN10-G 485
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    • 10000 $14.31
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    Avnet Americas FM25VN10-G Tube 26 Weeks 485
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    • 1000 $8.21
    • 10000 $7.61
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    Newark FM25VN10-G Bulk 480 1
    • 1 $15.60
    • 10 $14.54
    • 100 $13.49
    • 1000 $13.07
    • 10000 $13.07
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    EBV Elektronik FM25VN10-G 27 Weeks 485
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    Flip Electronics FM25VN10-G 9,700
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    Infineon Technologies AG FM25VN10-GTR

    IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SOIC8
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    TME FM25VN10-GTR 2,500
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    Avnet Americas FM25VN10-GTR Tape & Reel 26 Weeks 2,500
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    • 10000 $10.45
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    Newark FM25VN10-GTR Cut Tape 2,173 1
    • 1 $18.59
    • 10 $18.59
    • 100 $18.59
    • 1000 $18.59
    • 10000 $18.59
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    EBV Elektronik FM25VN10-GTR 27 Weeks 2,500
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    Flip Electronics FM25VN10-GTR 9,700
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    Cypress Semiconductor FM25VN10-G

    FRAM (Ferroelectric RAM) 1Mbit 128k x 8 2V - 3.6V SPI 40MHz 9ns 8-SOIC Tube
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    Rochester Electronics FM25VN10-G 3 1
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    • 100 $9.32
    • 1000 $8.34
    • 10000 $7.85
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    Ramtron International Corporation FM25VN10-G

    FRAM (Ferroelectric RAM) 1Mbit 128k x 8 2V - 3.6V SPI 40MHz 9ns 8-SOIC Tube
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    Rochester Electronics FM25VN10-G 13 1
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    • 100 $9.32
    • 1000 $8.34
    • 10000 $7.85
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    United Chemi-Con Inc SMH25VN103M22X40T2

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    Master Electronics SMH25VN103M22X40T2
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    • 10000 $1.25
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    25VN10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FM25V10

    Abstract: FM25V10-G FM25VN10 25VN10
    Contextual Info: Preliminary FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 128K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original
    fm25v10fm25vn1025vn10a6340282a+5ric0824fm25v10-gfm25vn10-gfm25v10-gtrfm25vn10-gtr PDF

    Contextual Info: Preliminary FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 128K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original
    fm25v10fm25vn10340282a25v10+3a6340282aric082425vn10 PDF