FM25V10G Search Results

FM25V10

Abstract: FM25V10-G FM25VN10 25VN10
Contextual Info: Preliminary FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 128K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25V10 1-Mbit 128 K x 8 Serial (SPI) F-RAM 1-Mbit (128 K × 8) Serial (SPI) F-RAM Features Functional Overview • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

FM25V10

Abstract: fm25v10-g FM25V fm25v10g fm25vn10-g
Contextual Info: FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM25VN10-G

Abstract: FM25V10 FM25V10-G FM25VN10 FM25V10-GTR FM25V10gtr AEC-Q100-002 fm25v
Contextual Info: Pre-Production FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25V10-G

Abstract: fm25v10
Contextual Info: Pre-Production FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 131,072 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

AEC-Q100

Abstract: FM25V10-G aecq100 aec-q100 package Ramtron FRAM Serial Memory
Contextual Info: The "'aoa d •• '," 06 July 2010 F-RAM upgraded to automotive qualification Low power, high-performance F-RAM meets AEC-Q100 Grade 3 standards. Ramtron International’s FM25V10-G is a 1Mb, 2.0-3.6V serial F-RAM memory device that has been qualified to AEC-Q100 Grade 3 standards.

Contextual Info: Preliminary FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM • Organized as 128K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM Organized as 131,072 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI

fm25v10

Abstract: cypress flash 370
Contextual Info: FM25V10 1Mb Serial 3V F-RAM Memory Features 1M bit Ferroelectric Nonvolatile RAM Organized as 131,072 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI