FM24V02 Search Results

AN206

Abstract: FM24L256 FM24V02 24V02
Contextual Info: AN206 Differences in FM24L256 and FM24V02 Applies to 256Kb I2C F-RAM Devices DESCRIPTION This document points out the differences the FM24L256 and FM24V02 F-RAM devices. For most designs, the FM24V02 device can be considered a superset of the FM24L256. The two devices are

FM24V02-GTR

Abstract: FM24V02 FM24V05 FM24VN02 FM24VN05
Contextual Info: Product Preview FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

Contextual Info: Pre-Production FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM24V02

Abstract: FM24V05 FM24VN02 FM24VN05
Contextual Info: Preliminary FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM24V02G

Abstract: FM24VN02 AEC-Q100-002 FM24V02
Contextual Info: Pre-Production FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM24V02 256-Kbit 32 K x 8 Serial (I2C) F-RAM 256-Kbit (32 K × 8) Serial (I2C) nvSRAM Features Functional Overview • 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM24V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

MOXA

Abstract: FM25V02 1E14 FM24V02 LT3758 RAMTRON ram spi
Contextual Info: Ramtron announces serial nonvolatile F-RAM devices: News from Ramtron International Page 1 of 2 Electronicstalk Products and services for electronics design and manufacturing engineers Google Ads Ramtron announces serial nonvolatile F-RAM devices

fm24l256-g

Abstract: FM24L256
Contextual Info: Preliminary FM24L256 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Unlimited Read/Write Cycles • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

RAMTRON

Abstract: 130nm CMOS 256kb ferroelectric FM28V020 1E14 FM18L08 FM24V02 FM24V05 FM24V10
Contextual Info: Electronics Components World - Ramtron Launches V-Family 256-Kilobit Parallel F-RAM Page 1 of 3 New Products / Ramtron Launches V-Family 256-Kilobit Parallel F-RAM Publication date: 11 August 2009 Ramtron Launches V-Family 256-Kilobit Parallel F-RAM Ramtron International Corporation Nasdaq: RMTR , a leading developer and supplier