MEGABIT Search Results

27A6

Contextual Info: TMS28F210 1048576-BIT FLASH MEMORY I SMJS210B - DECEMBER 1892 - REVISED JUNE 1995 N PACKAGE TOP VIE W Pin Compatible With Existing 1-Megabit EPROMs All Inputs/Outputs TTL Compatible Vcc Tolerance ±10% Maximum Access/Minimum Cycle Time ’28F210-10 100 ns

27LV010A

Contextual Info: TMS27LV010A1 048 576-BIT UV ERASABLE LOW VOLTAGE PROGRAMMABLE ROM TMS27LV010A1 048 576-BIT LOW VOLTAGE ONE-TIME PROGRAMMABLE ROM SMLS113-DECEMBER 1992 x 8 J AND N PACKAGESt TOP VIEW Single 3.3-V Power Supply Operationally Compatible With Existing 1-Megabit EPROMs

Contextual Info: SMJ27C210 1 048576-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY SM G S028A — MARCH 19B8 — REVISED N O VEM BER 1990 J Package Top View Single 5-V Power Supply Operationally Compatible With Existing Megabit EPROMs 40-Pln Dual-In-line Package All Inputs and Outputs Fully TTL

AM29F016D-120

Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Contextual Info: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm

Contextual Info: PDM31034 PRELIMINARY 1 Megabit 3.3V Static RAM 128K x 8-Bit Revolutionary Pinout Description Features n High-speed access times Com’l: 9, 10, 12, 15 and 20 ns Ind’l.: 12, 15 and 20 ns Automotive: 15 and 20 ns n Low power operation typical - PDM31034SA

NS41024S55

Abstract: NS41024S55E-SMD PDM41024W
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 11/28/95 Last Update Date: 12/20/96 Last Major Revision Date: 11/28/95 MDNS41024S55-X REV 0B0 1 Megabit Static RAM 128K x 8 bit General Description NS41024S55 is a high performance, standard power version CMOS static RAM organized as

NS41024S35

Abstract: PDM41024W
Contextual Info: MILITARY DATA SHEET Original Creation Date: 11/28/95 Last Update Date: 12/20/96 Last Major Revision Date: 11/28/95 MNNS41024S35-X REV 0B0 1 Megabit Static RAM 128K x 8 bit General Description NS41024S35 is a high performance, standard power version CMOS static RAM organized as

am29f400bb

Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
Contextual Info: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements

NS41024S25

Abstract: NS41024S25E-SMD PDM41024W 5962-8959837MMA
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 11/28/95 Last Update Date: 12/20/96 Last Major Revision Date: 11/28/95 MDNS41024S25-X REV 0B0 1 Megabit Static RAM 128K x 8 bit General Description NS41024S25 is a high performance, standard power version CMOS static RAM organized as

NS41024S45

Abstract: NS41024S45E-SMD PDM41024W
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 11/28/95 Last Update Date: 12/20/96 Last Major Revision Date: 11/28/95 MDNS41024S45-X REV 0B0 1 Megabit Static RAM 128K x 8 bit General Description NS41024S45 is a high performance, standard power version CMOS static RAM organized as

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

XM28C010P

Contextual Info: XM28C010P 1 Megabit Puma Module 32K x 32 Bit High Speed 5 Volt Byte Alterable Nonvolatile Memory Array • High Reliability —Endurance: 100,000 Cycles —Data Retention: 100 Years FEATURES • High Speed, High Density Memory Module —150ns, 120ns, 90ns and 70ns Access Times

NS41024S45

Abstract: PDM41024W
Contextual Info: MILITARY DATA SHEET Original Creation Date: 11/28/95 Last Update Date: 12/20/96 Last Major Revision Date: 11/28/95 MNNS41024S45-X REV 0B0 1 Megabit Static RAM 128K x 8 bit General Description NS41024S45 is a high performance, standard power version CMOS static RAM organized as

A22 SMD CODE

Abstract: A22 SMD MARKING CODE AM30LV0064DJ40
Contextual Info: Am30LV0064D 64 Megabit 8 M x 8-Bit CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read, erase, and program operations — Separate VCCQ for 5 volt I/O tolerance

NS41024L45

Abstract: PDM41024W
Contextual Info: MILITARY DATA SHEET Original Creation Date: 11/28/95 Last Update Date: 12/20/96 Last Major Revision Date: 11/28/95 MNNS41024L45-X REV 0B0 1 Megabit Static RAM 128K x 8 bit General Description NS41024L45 is a high performance, low power version CMOS static RAM organized as 131,072 X

NS41024L17

Abstract: PDM41024W
Contextual Info: MILITARY DATA SHEET Original Creation Date: 11/27/95 Last Update Date: 12/20/96 Last Major Revision Date: 11/27/95 MNNS41024L17-X REV 0B0 1 Megabit Static RAM 128K x 8 bit General Description NS41024L17 is a high performance, low power version CMOS static RAM organized as 131,072 X

Contextual Info: 4*ìE T> Sabf l MSb 000E073 174 _ I MMHS MATRA M H S January 1991 Preliminary M 65M748 HI-REL DATA SHEET 256 k x 8 SRAM MODULE FEATURES • HIGH DENSITY 2 MEGABIT SRAM MODULE ASYNCHRONOUS ■ MILITARY ACCESS TIME : 35*/45/55 ns 5 VOLT OPERATION ■ LOW POWER CONSUMPTION

Contextual Info: MTE » Preliminary • SñbñMSb DDG2Q61 EMG IfilMl llllr iilll MATRA ■ M H S _ T - ^ January 1991 N H S M 65M724 HI-REL DATA SHEET 128 k X 8 SRAM MODULE FEATURES . . . HIGH DENSITY 2 MEGABIT SRAM MODULE MILITARY ACCESS TIME; 35*/45/55 ns LOW POWER CONSUMPTION

Contextual Info: PRELIMINARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

AM28F020

Contextual Info: FINAL Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

Memory

Abstract: FTS8L32512V
Contextual Info: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.

W49F020T

Abstract: W49F020
Contextual Info: W49F020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase operations with

1664t

Abstract: AT52BR1662T AT52BR1664T tba 790
Contextual Info: Features • 16-megabit x16 Flash and 2-megabit/4-megabit SRAM • 2.7V to 3.3V Operating Voltage • Low Operating Power – 40 mA Operating Current (Maximum) – 50 µA Standby Current (Maximum) • Industrial Temperature Range Flash • 2.7V to 3.3V Read/Write