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Contextual Info: • 430Z271 0054745 0T2 fKj HARRIS V D SEMICONDUCTOR February1994 ■ HAS RFD7N10LE, RFD7N10LESM RFP7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB
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430z271rfd7n10lerfd7n10lesmrfp7n10le+3o-220abo-251aa184e-9
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FF175
Abstract: 268E-5
Contextual Info: RFD7N10LE, RFD7N10LESM, RFP7N10LE H A R R IS S E M I C O N D U C T O R 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs January 1998 Features Description • 7A, 100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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rfd7n10lerfd7n10lesmrfp7n10le07e-14+837e-272e-359e-684e-832e-150e-4ff175268e-5
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7n10le
Abstract: AN7254 AN7260 RFD7N10LE RFD7N10LESM RFP7N10LE pspice model for ttl TC247
Contextual Info: S E M I C O N D U C T O R February 1994 RFD7N10LE, RFD7N10LESM RFP7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB TOP VIEW • rDS(ON) = 0.300Ω • 2KV ESD Protected
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rfd7n10lerfd7n10lesmrfp7n10leo-220ab+7o-251aa1-800-4-harris7n10lean7254an7260pspice model for ttltc247
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Contextual Info: P *3 3 S RFD7N10LE, RFD7N10LESM, RFP7N10LE 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs January 1998 Features Description • 7A, 100 V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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rfd7n10lerfd7n10lesmrfp7n10le184e-9+51e-3013e-374e-845e-368e-5
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7N10LE
Abstract: FP7N10LE RFD7N10LESM9A TO-220 package thermal resistance pspice model for ttl RFD7N10LE RFD7N10LESM RFP7N10LE TB334 TC1-1-13
Contextual Info: RFD7N10LE, RFD7N10LESM, RFP7N10LE S E M I C O N D U C T O R 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs January 1998 Features Description • 7A, 100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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rfd7n10lerfd7n10lesmrfp7n10le184e-9+121e-3013e-374e-845e-368e-57n10lefp7n10lerfd7n10lesm9ato-220 package thermal resistancepspice model for ttltb334tc1-1-13
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pspice model for ttl
Abstract: 7n10l FP7N10LE 268E-5 TC1-1-13 358e9 pspice model for CMOS TRS-10
Contextual Info: m HARRIS RFD7N10LE, RFD7N10LESM RFP7N10LE U U S E M I C O N D U C T O R February 1994 7 A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Packaging Features JEDEC TO-220AB TOP VIEW • 7A, 100V • r DS(ON) = 0 .3 0 0 Q
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rfd7n10lerfd7n10lesmrfp7n10leo-220ab+11o-251aa1e-3013e-3pspice model for ttl7n10lfp7n10le268e-5tc1-1-13358e9pspice model for cmostrs-10
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field-effect transistors
Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
Contextual Info: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .
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2n69012n69022n69032n6904+15rfl1n08lrfl1n10lrfl1n12lrfl1n15lrfl1n18lrfl1n20lfield-effect transistors05lsmrfp8n18lrfp25n06ltransistorsfield-effect transistorrfp14n05lm 615 transistortransistor 684
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FP7N10LE
Abstract: JEDEC TO-251AA RFD7N10LE RFP4N05L RFP4N06L RFD7N10LESM 7n10l
Contextual Info: RFP4N05L RFP4N06L Harris A u g u s t 19 91 N-Channel Logic Level Power Field-Effect Transistors L2FET Package Features T0-220A B TOP VIEW • 4A, 5 0 V and 60 V • rD S {0 N ) = ° - 8 n DRAIN (FLANGE) • Design O ptim ized for 5 V G a te Drives • Can b e D riven D irectly from Q M O S, NM O S, T T L Circuits
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rfp4n05lrfp4n06lmil-std-883fp7n10le+4jedec to-251aarfd7n10lerfd7n10lesm7n10l
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SSH6N80
Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Contextual Info: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205
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2sk11192sk11202sk11512sk1152+162sk11532sk11542sk11552sk11562sk11572sk1158ssh6n80irf640 equivalentbuz100 equivalentste38na50irf540 equivalentstp2na60buz10 equivalentbuk444 equivalent2sk2700 equivalentbuz71 equivalent
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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rd91ebq2n4401d1n3940q2n2907a+7d1n1190q2sc1815q2n3055q2n1132d1n750d02cz10d1n751
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irf630 irf640
Abstract: IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF
Contextual Info: МОЩНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ Power MOSFET HARRIS является мировым лидером в производстве Power MOSFET. Выпускаются как n канальные, так и p канальные транзисторы, но первые используются чаще и имеют больший
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220ab0rfp25n05rfp50n05rfp22n10+15rfp40n10irfp450irfp460irfpg40irf9510irf630 irf640irf250nirfp250 irfp460irf6404mosfet irf460irf460 to-247fet irfp450irf510 mosfet irf640mosfet irf460 to 247mosfet irf
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equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:
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1-800-4harrisequivalent data book of 10n60 mosfetmc14016cpgd4511+7an-6466cx 2859 smd74ac14 spice6120* harrishcf4018be7028 smd transistorspice irfbc40
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