7N10L Search Results

7n10l

Abstract: 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
Contextual Info: 7N10LE, 7N10LESM Data Sheet Title FD7 0L, D7 0LS bt A, 0V, 00 m, an, gic vel, wer OSTs utho October 1999 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs Features These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes

7n10l

Abstract: RFD7N10LESM 7n10le AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
Contextual Info: 7N10LE, 7N10LESM Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe

Contextual Info: • 430Z271 0054745 0T2 fKj HARRIS V D SEMICONDUCTOR February1994 ■ HAS 7N10LE, 7N10LESM 7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB

7n10le

Abstract: AN7254 AN7260 RFD7N10LE RFD7N10LESM RFP7N10LE pspice model for ttl TC247
Contextual Info: S E M I C O N D U C T O R February 1994 7N10LE, 7N10LESM 7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB TOP VIEW • rDS(ON) = 0.300Ω • 2KV ESD Protected

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe

7n10l

Abstract: UTC 7N10G-AA3-R 7n10
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe

7n10l

Abstract: 7n10le pspice model for ttl AN7254 AN7260 RFD7N10LE RFD7N10LESM RFD7N10LESM9A TB334
Contextual Info: 7N10LE, 7N10LESM Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum

Contextual Info: 7N10LE, 7N10LESM S em iconductor April 1999 Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe

diode gee a9

Abstract: HTC one m7
Contextual Info: SPP 7N10L Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.026 fl 47 A b 100 V • Logic Level

7n10l

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N10 Preliminary Power MOSFET 7 Amps, 100 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power FET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

Contextual Info: P *3 3 S 7N10LE, 7N10LESM, 7N10LE 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs January 1998 Features Description • 7A, 100 V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

7n10l

Abstract: RFD7N10LESM9A
Contextual Info: in terrii 7N10LE, 7N10LESM D ata S h e e t 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power M O S F E T s are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum

7N10LE

Abstract: FP7N10LE RFD7N10LESM9A TO-220 package thermal resistance pspice model for ttl RFD7N10LE RFD7N10LESM RFP7N10LE TB334 TC1-1-13
Contextual Info: 7N10LE, 7N10LESM, 7N10LE S E M I C O N D U C T O R 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs January 1998 Features Description • 7A, 100V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

7n10l

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe

pspice model for ttl

Abstract: 7n10l FP7N10LE 268E-5 TC1-1-13 358e9 pspice model for CMOS TRS-10
Contextual Info: m HARRIS 7N10LE, 7N10LESM 7N10LE U U S E M I C O N D U C T O R February 1994 7 A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Packaging Features JEDEC TO-220AB TOP VIEW • 7A, 100V • r DS(ON) = 0 .3 0 0 Q