7N10 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe

7n10l

Abstract: UTC 7N10G-AA3-R 7n10
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe

7N10

Abstract: UTC 7N10G-AA3-R 39-4B
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N10 Preliminary Power MOSFET 100V N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power FET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and

7N10

Abstract: UTC 7N10G-AA3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N10 Preliminary Power MOSFET 100V N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power FET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe

7N10

Abstract: UTC 7N10G-AA3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N10 Preliminary Power MOSFET 100V N-CHANNEL MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power FET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and

7n10l

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N10 Preliminary Power MOSFET 7 Amps, 100 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power FET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N10Z Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N10Z is an N-Channel enhancement mode power MOSFET providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10Z uses planar

7n10l

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe

7n10l

Abstract: 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
Contextual Info: 7N10LE, 7N10LESM Data Sheet Title FD7 0L, D7 0LS bt A, 0V, 00 m, an, gic vel, wer OSTs utho October 1999 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs Features These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes

7n10l

Abstract: RFD7N10LESM 7n10le AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
Contextual Info: 7N10LE, 7N10LESM Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum

2N1025

Abstract: 2N1026 2N1469 2N327A
Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N935 — 2N936 — 2N937 — 2N938 — 2N939 — 2N940 — GENERAL PURPOSE SILICON EPITAXIAL JUNCTION PNP TRANSISTORS 2N327A 2N328A 2N329A

7N10

Abstract: ZXMN10A07Z ZXMN10A07ZTA mosfet structure
Contextual Info: ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=100V; RDS(ON)=1 ; D=1.15A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low

7n10le

Abstract: AN7254 AN7260 RFD7N10LE RFD7N10LESM RFP7N10LE pspice model for ttl TC247
Contextual Info: S E M I C O N D U C T O R February 1994 7N10LE, 7N10LESM 7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Features Packaging • 7A, 100V JEDEC TO-220AB TOP VIEW • rDS(ON) = 0.300Ω • 2KV ESD Protected

7n10l

Abstract: 7n10le pspice model for ttl AN7254 AN7260 RFD7N10LE RFD7N10LESM RFD7N10LESM9A TB334
Contextual Info: 7N10LE, 7N10LESM Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum

Contextual Info: 7N10LE, 7N10LESM S em iconductor April 1999 Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

SOT89 MARKING CODE

Contextual Info: A Product Line of Diodes Incorporated ZXMN10A07Z ADVANCE INFORMATION 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits V BR DSS RDS(on) Max 100V 700mΩ @ VGS = 10V 900mΩ @ VGS = 6V • • • • • • • ID max

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

diode gee a9

Abstract: HTC one m7
Contextual Info: SPP 7N10L Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.026 fl 47 A b 100 V • Logic Level

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

7N10

Abstract: ZXMN10A07Z ZXMN10A07ZTA
Contextual Info: ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=100V : RDS(on)=0.7 ; ID=1.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes

Contextual Info: 7N10F7 N-channel 100 V, 0.027 Ω typ., 7 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data Features 1 2 Order code VDS RDS on max ID 7N10F7 100 V 0.035 Ω 7A • N-channel enhancement mode 3 • Lower RDS(on) x area vs previous generation