diode gee a9
Abstract: HTC one m7
Contextual Info: SPP 47N10L Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.026 fl 47 A b 100 V • Logic Level
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47n10lspp47n10lspb47n10lp-t0220-3-1+8q67040-s4177p-t0263-3-2q67040-s4176s35bq5q133777sqt-89diode gee a9htc one m7
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47N10L
Abstract: transistor FS 22 SM 10 j50g SPB47N10L SPP47N10L
Contextual Info: Preliminary Data SPP 47N10L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.026 Ω Continuous drain current ID Enhancement mode • Avalanche rated 100 V 47 A • Logic Level
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47n10lspp47n10lp-to220-3-1q67040-s4177+5spb47n10lp-to263-3-2q67040-s4176transistor fs 22 sm 10j50g
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47N10L
Abstract: smd diode code marking 33A SPP47N10L SPB47N10L SPI47N10L KJ SMD DIODE MARKING
Contextual Info: Preliminary data 47N10L 47N10L,47N10L SIPMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated 100 VDS P-TO262-3-1 RDS on 26 m ID 47 A P-TO263-3-2
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spi47n10lspp47n10lspb47n10lp-to262-3-1+6p-to263-3-2p-to220-3-1q67040-s417747n10lsmd diode code marking 33akj smd diode marking
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PEF 24628
Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by
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b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819
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BCM 4336
Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06
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b192-h6780-g9-x-7600d-81669vdsl5100i-evdsl6100i-e+10bcm 43362a0565c23352a280zc1740 bipolar transistortransistor a1267a1273 transistorc2335 r2b05652b265
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47N10L
Abstract: SPI47N10L 47N10 SPB47N10L SPP47N10L
Contextual Info: Preliminary data 47N10L 47N10L,47N10L SIPMOS Power-Transistor Product Summary Feature N-Channel VDS Enhancement mode R DS on 26 m Logic Level ID 47 A 175°C operating temperature P-TO262-3-1 P-TO263-3-2 100 V P-TO220-3-1 Avalanche rated
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spi47n10lspp47n10lspb47n10lp-to262-3-1+5p-to263-3-2p-to220-3-1q67040-s417747n10l47n10
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