RA5ONLY Search Results

C1000B

Abstract: 3020C
Contextual Info: KM416C1000BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

DG34B

Contextual Info: KM44C4 1 04B S CMOS DR AM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

KM44C4104bk

Abstract: cd-rom circuit diagram
Contextual Info: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

marking WMM

Abstract: RA52 1cas5 22r29
Contextual Info: 1 MEG x 4 DRAM DRAM QUAD CAS PARITY, FAST PAGE MODE FEATURES • Four independent CAS controls, allowing individual m anipulation to each of the four data In p u t/O u tp u t ports DQ1 through DQ4 . • Offers a single chip solution to byte level parity for 36bit w ords w hen using 1 Meg x 4 DRAMs for mem ory

Contextual Info: ADVANCE MICRON 4 MEG TECHNOLOGY. INC U SMALL-OUTLINE DRAM MODULE 16 MEGABYTE, 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH 72-Pin Small-Outline DIMM DE-5 SOJ version (DE-3) TSOP version -6 -7 D DT Packages 7 2 -pin Small-Outline DIMM (gold) Refresh Standard/32m s

Contextual Info: blllSM'ì 0004371 2E2 B U R N SSE D MICRON TECHNOLOGY INC ADVANCE ic n o N MT4C8512/3 5 1 2 K x 8 DRAM DRAM 512K x 8 DRAM FAST PAGE M O D E • Industry standard x8 pinouts, timing, functions and packages • Address entry: 10 row addresses, nine column addresses

KM44C1003c

Contextual Info: KM44C1003C CMOS DRAM 1 Mx 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 , power

rbbb

Contextual Info: KM416V254DJ ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

Contextual Info: K M 4 4 C 4 10 5 B K CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.

KM416C64

Contextual Info: KM416C64 CMOS DRAM 6 4 K x 1 6 B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 65,536 x 16 bit Extended Date Out CMOS DRAMs. Extended Date Out Mode offers high speed random access of memory cells within the same row. Access time 55, 60 or 70 , power consumption

Contextual Info: SAMSUNG ELECTRONICS INC b 4E D • 7T b 4142 G a m b a s KMM5362000A1/A1G 41b ■ SMGK DRAM MODULES 2M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000A1 is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung

Contextual Info: MT4C1024 L 1 MEG X 1 DRAM (M IC R O N DRAM 1 MEG x 1 DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cy cle re fre sh in 8m s (M T 4C 1024) o r 6 4 m s (M T 4C 1024 L) • In d u stry -stan d a rd x l p in o u t, tim in g , fu n ctio n s and p ack ag e s

51C256L

Abstract: 51C256L-12 51C256L-15 51C256L-20 28003* intel
Contextual Info: [P iF S iiU B lO tM Ä ß W in te T 51C256L LOW POWER 256K x 1 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum CHMOS Standby Current (mA) • Low Power Data Retention - Standby current, CHMOS — 1 0 0 /¿A (max.) - Refresh period, RAS-Only — 32ms (max.)

Contextual Info: DENSE-PAC MICROSYSTEMS 640 Megabit CMOS DRAM DPD16MX40PKW5 PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The DPD16MX40PKW5 is the 16 Meg x 40 ECC Dynamic RAM module in the family of SuperSIMM modules that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of 4 stacks consisting of four 16 Meg x

20100c

Abstract: 13409C
Contextual Info: CELESTICA 8M x 36 PARITY FPM SIMM FEATURES • • 72-pin industry standard 4-byte single-in-line memory module Compliant with JEDEC standards 21 -C and MO-116 Supports 90°, 40° and 22.5° connectors High performance, CMOS Single 5V ± 10% power supply

20264C

Contextual Info: CELESTICA„ 8M x 72 EDO ECC UNBUFFERED DIMM FEATURES 168-pin industry standard eight-byte dual-in-line memory module JEDEC compliant: 21-C, Figure 4.5.3-A, B, F, D, N Release 7 No. 95 MO-161 High performance, CMOS Single 3.3V ± 0.3 power supply LVTTL-compatible inputs and outputs

200jjs

Contextual Info: CELESTICA 2M x 64 FPM BUFFERED DIMM FEATURES • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: 21 C, Fig. 4-13A, B, C, D, F Release 4 : No. 95 MO-161 CAS, WE, OE and Address lines are buffered High performance, CMOS Single 3.3 ± 0.3V power supply

Contextual Info: CELESTICA 1M x 64 FPM UNBUFFERED DIMM FEATURES • • • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: 21-C, Fig. 4-13A, B, C, D, I No. 95 MO-161 High performance, CMOS Single 3.3 ± 0.3V power supply LVTTL-compatible inputs and outputs

Contextual Info: CELESTICA 2M x 64 FPM UNBUFFERED DIMM FEATURES • • • • • • • • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: 21-C, Fig. 4-13A, B, C, D, I No. 95 MO-161 High performance, CMOS Single 3.3 ± 0.3V power supply LVTTL-compatible inputs and outputs

Contextual Info: H Y 5 1 V 1 6 1 O O A “H Y U N D A I S e r ie s 16MX 1-bit CMOS DRAM PRELIMINARY DESCRIPTION TTie HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. The HY51V16100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: ♦HYUNDAI H Y 5 1 4 1 0 0 S e rie s 4M X 1-bit CMOS DRAM SEMICONDUCTOR DESCRIPTION The HY514100 is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: HY51V17405B Series •HYUNDAI 4M x 4-bit CMOS DRAM with Burst EDO DESCRIPTION The HY51V17405B is the new generation and fast dynamic RAM organized 4,194,304x4-bit. The HY51V17405B utilized Hyundai's CMOS silicon gate process technology as well as advenced circuit techniques to prove wide

030b4T

Abstract: C1204B
Contextual Info: KM416V1004BJ ELECTRONICS CMOS D R A M 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power