R714X Search Results

R711XPT

Abstract: 340D-01 5 amp diode rectifiers ultrafast dual diode 15 amp. 300 volts R714XPT FAST RECOVERY RECTIFIERS Diode R711X R710XPT R712XPT 200 Ampere power diode
Contextual Info: MOTOROLA SC DIODES/OPTO b4E » • L.3b?2S5 0DäbSS3 SSQ MOT? MOTOROLA ■ SEM ICONDUCTOR TECHNICAL DATA R710XPT R711XPT R712XPT R714XPT R712XPT I s a Motorola Preferred Devico SWITCHMODE POWER RECTIFIERS ULTRAFAST RECOVERY RECTIFIERS designed for special applications su c h a s dc pow er supplies,

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

R711

Abstract: R702 R704 R712X R706 R711X R712 R714 R714X 1.5A COMMON CATHODE
Contextual Info: 30 Amp Dual Power Rectifiers R702-R716X r A~i t ¥ Minimum Baseplate A=Common Anode C 1 Dim. Inches — D V Baseplate Common Cathode o -W — j — N -o Baseplate D=Doubler A B C D E F G H J K L M M illim eter Maximum Minimum - .875 .450 .250 .312 .038

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

MDA2501

Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
Contextual Info: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090

20N15

Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.

Varo R711

Abstract: R712 varo diode Varo R712X varo semiconductor R704 R716 R711 R711X R712X
Contextual Info: vy VARO SEMICONDUCTOR, INC., P.O. Box 469013 1000 N. Shiloh; Garland, Texas 75046-9013 214 271 -8511 TW X 910-860-5178 VARO 30 Amp Center Tapped Silicon Integrated Rectifiers Controlled Avalanche Types with250V, 450V, and 650V Minimum Avalanche Ratings Non-Controlled Avalanche Types with

Varo R711

Abstract: R714X R712 Varo R712X R711X VARO varo semiconductor varo R712 Varo Semiconductor avalanche R712X
Contextual Info: VARO SEMICONDUCTOR. INC. P.O. BOX 676. 1000 N. SHILOH, GARLAND, TEX. 75040 214 272-4551 TWX 910-860-5178 30AMP CENTER TAPPED SILICON INTEGRATED RECTIFIER •u- TO-3 CASE AC POSITIVE AC AC NEGATIVE AC ■ Controlled Avalanche series: 250V, 450V & 650V min. avalanche ratings

R712

Abstract: R702-R7 R702 R714 R706 R712X R704 R711 R711X R714X
Contextual Info: 30 Amp Dual Power Rectifiers R702-R7 ¥ r A- i t Dim. Inches Minimum Baseplate A=Common Anode C V I — D Baseplate Common Cathode oN | M illim e te r N o Baseplate D=Doubler A B C D E F G H J K L M Maximum Minimum _ .875 .450 .250 .312 .038 1.177 .655 .420

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

Contextual Info: 30 Amp Dual Power Rectifiers R702- R71 6X ii r r A^ L _ l± n Dim. Inches Minimum Baseplate A=Common Anode l T I— M illim e te r D V Baseplate Common Cathode °N | N ° Baseplate D=Doubler A B C D E F G H J K L M Maximum Minimum - .875 .450 .250 .312 .038

R716X

Abstract: R711
Contextual Info: MICRO QUALITY / S E M IC O N D U C T O R , IN C . 30 Amp Center Tapped Silicon Integrated Rectifiers Controlled Avalanche Types with 250V, 450V, and 650V Minimum Avalanche Ratings Non-Controlled Avalanche Types with 100V, 200V, 400V and 600V VRRM Ratings High Cycle Surge Current

MUR1560 equivalent

Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
Contextual Info: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

J377

Abstract: silicon power J377 R704 Diode IR714 R711X R706 R711 R716 R702 R712
Contextual Info: ShE T> m m C R O S E M I CORP/ MICRO bllS'lD? GDD1321 ñbS • MÖL / ^2307 M IC R O QUALITY / SEMICONDUCTOR, INC 30 Amp Center Tapped Silicon Integrated Rectifiers Controlled Avalanche Types with 250V, 450V, and 650V Minimum Avalanche Ratings Non-Controlled Avalanche Types with

GFB7400D

Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest

UAA2001

Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­

transistor U1620R

Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
Contextual Info: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave

A14F diode

Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
Contextual Info: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.