QSE213 Search Results

QEE213

Abstract: QSE213 Infrared Phototransistor
Contextual Info: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE213 PACKAGE DIMENSIONS 0.060 1.50 0.174 (4.44) R 0.030 (0.76) ;@;@ 0.047 (1.20) 0.224 (5.71) 0.177 (4.51) 0.030 (0.76) 0.5 (12.7) MIN SCHEMATIC Collector EMITTER 0.060 (1.52) 0.020 (0.51) SQ. (2X) Emitter 0.100 (2.54)

Infrared Phototransistor

Abstract: QEE213 QSE213 QSE214
Contextual Info: QSE213/QSE214 Plastic Silicon Infrared Phototransistor Features Description • ■ ■ ■ ■ ■ The QSE213/QSE214 is a silicon phototransistor encapsulated in a medium angle, infrared transparent, black thin plastic sidelooker package. NPN Silicon Phototransistor

"infrared phototransistor"

Abstract: all datasheet phototransistor Infrared Phototransistor QEE213 QSE213 QSE214
Contextual Info: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE213 QSE214 PACKAGE DIMENSIONS 0.060 1.50 0.174 (4.44) R 0.030 (0.76) 0.047 (1.20) 0.224 (5.71) 0.177 (4.51) 0.030 (0.76) 0.5 (12.7) MIN EMITTER SCHEMATIC 0.060 (1.52) 0.020 (0.51) SQ. (2X) 0.100 (2.54) Collector

Infrared Phototransistor

Abstract: "infrared phototransistor" all datasheet phototransistor QEE213 QSE213C QSE214C
Contextual Info: QSE213C/QSE214C Plastic Silicon Infrared Phototransistor Features Description • ■ ■ ■ ■ ■ The QSE213C/QSE214C is a silicon phototransistor encapsulated in a medium angle, infrared transparent, clear thin plastic sidelooker package. NPN Silicon Phototransistor

QEE213

Abstract: QSE213 QSE243
Contextual Info: PLASTIC INFRARED LIGHT EMITTING DIODE QEE213 PACKAGE DIMENSIONS 0.060 1.50 0.174 (4.44) R 0.030 (0.76) 0.047 (1.20) 0.224 (5.71) ;@;@ 0.177 (4.51) 0.030 (0.76) 0.5 (12.7) MIN SCHEMATIC EMITTER 0.060 (1.52) 0.020 (0.51) SQ. (2X) ANODE 0.100 (2.54) CATHODE

QEE213

Abstract: QSE213 QSE243
Contextual Info: QEE213 Plastic Infrared Light Emitting Diode Features Description • ■ ■ ■ ■ The QEE213 is a 940nm GaAs LED encapsulated in a medium angle, thin plastic sidelooker package. Wavelength = 940 nm, GaAs Package Type: Sidelooker Medium Beam Angle, 50°

QRB1134

Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
Contextual Info: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6

QEE273

Abstract: QSE213 QSE243 dc870 photosensor, 850nm
Contextual Info: QEE273 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ= 850nm The QEE273 is an 850nm AlGaAs LED encapsulated in a medium wide angle, thin plastic sidelooker package. ■ Package Type = Sidelooker ■ Chip Material = AlGaAs

L14F1 phototransistor datasheet

Abstract: L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor
Contextual Info: Optoelectronics Light Emitting Diodes Light Emitting Diodes LED , Plastic Package Ie (mW/sr) CIF = 100 mA Max IR (µA) @ VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength (nm) λp Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940

Contextual Info: QEE273 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ= 850nm The QEE273 is an 850nm AlGaAs LED encapsulated in a medium wide angle, thin plastic sidelooker package. ■ Package Type = Sidelooker ■ Chip Material = AlGaAs

4n35 optocoupler spice model

Abstract: L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

MAN6760 function

Abstract: KAR00042 KAR00044 KOI00003 KAT00022A kva00272 KAT00049 Fairchild kar00042 KAR00044A KDT00026
Contextual Info: Date Created: 2/12/2004 Date Issued: 2/19/2004 PCN # 20040702 INFORMATION ONLY NOTIFICATION This is to inform you that a minor change is being made to the following product s . This notification is for your information only. Updated process quality documentation, such as FMEAs and Control Plans, are available

MC0628R

Abstract: mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 FDD8896 "drop-in replacement" FQPF3N60C FQP50N06 equivalent FDS8884
Contextual Info: Discontinued Product s 4296_ST42091 5092_F50188E 5FS1_NB5F009 73282 74ABT646CMSA 74ABT646CMSAX 74ABT646CMTC 74ABT646CSC 74AC251SJ 74AC299SJX 74AC74CW 74ACT151SJ 74ACT16646SSC 74ACTQ08SJX Replacement Product(s) NONE NONE FDS3580 None 74ABT646ADB 74ABT646ADB

L14F1 phototransistor datasheet

Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
Contextual Info: Infrared Products Selection Guide Analog Discrete Interface & Logic Optoelectronics July 2002 • • • • • • Electrical and Optical Specifications Absolute Maximum Ratings Package Specifications Ordering Information Glossary of Terms Frequently Asked Questions

MC0628R

Abstract: 40373 74hc14n equivalent 4046 application note philips HCF4060BE HCF4017BE SN74121 application note MC74HC373DW mc0628 HCF4053BE
Contextual Info: R E L I A B L E . L O G I C . I N N O V A T I O N . Logic Cross-Reference Logic Cross-Reference 2003 Texas Instruments Printed in the U.S.A. by Texoma Business Forms, Durant, Oklahoma Printed on recycled paper. SCYB017A NEW First Revision Logic Cross-Reference

phototransistor 600 nm

Abstract: lens photodiode phototransistor Phototransistor to-18 QSD124 Phototransistor QSE773 QSC112 phototransistor application circuit photo-transistor QSC114
Contextual Info: Optoelectronics Plastic Silicon Photosensors Part Number IC ON (mA) Test Conditions VCE (V) Ee (mW/cm2) λp (nm) min max BVCEO (V) max ICEO @ 10 V VCE (nA) max Sensor Type T-1 (3 mm) Detector Package QSC112 5 0.5 880 AlGaAs 1.00 4.00 30 100 Phototransistor

phototransistor 950 nm

Contextual Info: Plastic Silicon Photosensors Sidelooker Detector Package 0.175 4.44 0.087 (2.22) 0.050 (1.27) Ø0.065 (1.65) 0.200 (5.08) Ø0.095 (2.41) 0.500 (12.70) MIN EMITTER Part Number VCE (V) Test Conditions Ee ␭p (nm) (mW/cm2) IC (ON) (mA) min max BVCEO ICEO @ 10 V VCE