PSWT Search Results

PSWT 160

Contextual Info: Thyristor Modules PSWT 160 PSYT 160 ITRMS VRRM = 180 A = 800 - 1600 V Preliminary Data Sheet V RSM V DSM 900 1300 1500 1700 Symbol V RRM V DRM 800 1200 1400 1600 Type PSWT 160/08 PSWT 160/12 PSWT 160/14 PSWT 160/16 Type PSYT 160/08 PSYT 160/12 PSYT 160/14

PSWT 70

Contextual Info: Thyristor Modules PSWT 70 PSYT 70 ITRMS VRRM = 80 A = 800 - 1600 V Preliminary Data Sheet V RSM V DSM 900 1300 1500 1700 Symbol V RRM V DRM 800 1200 1400 1600 Type PSWT 70/08 PSWT 70/12 PSWT 70/14 PSWT 70/16 Type PSYT 70/08 PSYT 70/12 PSYT 70/14 PSYT 70/16

PSWT 90

Abstract: pswt
Contextual Info: Thyristor Modules PSWT 90 PSYT 90 ITRMS = VRRM = 165 A 800 - 1600 V Preliminary Data Sheet V RSM V DSM 900 1300 1500 1700 Symbol V RRM V DRM 800 1200 1400 1600 Type PSWT 90/08 PSWT 90/12 PSWT 90/14 PSWT 90/16 Type PSYT 90/08 PSYT 90/12 PSYT 90/14 PSYT 90/16

mje13009g

Abstract: MJE130 2N2222 transistor to drive a relay MJE13009 MJE13009D
Contextual Info: MJE13009G SWITCHMODE Series NPN Silicon Power Transistors The MJE13009G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,

Contextual Info: TPS40140 DUAL OR 2-PHASE, STACKABLE CONTROLLER www.ti.com SLUS660F – SEPTEMBER 2005 – REVISED SEPTEMBER 2009 1 INTRODUCTION 1.1 FEATURES • VDD From 4.5 V to 15 V, With Internal 5-V Regulator VOUT From 0.7 V to 5.8 V Converts From 15-V Input to 0.7-V Output at

MJE13003K

Abstract: Transistor 2N2222 NPN TO92 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 npn transistors 700V 1A core ferroxcube Benchmark NPN Transistor 1.5A 700V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.

pswt

Abstract: MJE13003 TO-92 NPN Transistor 1.5A 700V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch

mje13009 equivalent

Abstract: 2N2222 SOA mje13009l MJE13009L-T3P-T QW-R214-011 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They

MJE13009

Abstract: 2N2222 transistor output curve mje13009l mje13009 CIRCUIT 2N2222 SOA MJE13009G tr 2n2222 MJE13009L-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such

mje13003

Abstract: 2n2222 npn switching transistor mje13003 equivalent UTCMJE13003 2N2222 NPN Transistor features
Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly

pnp 222A

Abstract: MJE5850 MJE5851 MJE5852 1N4934 1N4937 MJE15028 MJE15029 mje5851 transistor Motorola AN222A
Contextual Info: MOTOROLA Order this document by MJE5850/D SEMICONDUCTOR TECHNICAL DATA Designer's MJE5850 MJE5851* MJE5852 *  Data Sheet SWITCHMODE Series PNP Silicon Power Transistors *Motorola Preferred Device 8 AMPERE PNP SILICON POWER TRANSISTORS 300, 350, 400 VOLTS

Contextual Info: Dual Channel/Dual Phase PMBus ChargeMode Control DC/DC Digital Controller ZL8800 Features The ZL8800 is a dual output or dual phase digital DC/DC controller. Each output can operate independently or be used together in a dual phase configuration for high current

2n222 TRANSISTOR

Abstract: MJE13005G equivalent mje13005 transistors mje13005 transistor 2n222 circuit based on MJE13005 1N493 AMP24 1N5820 2N222
Contextual Info: MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls,

intersil zl2006 an33

Abstract: 2N3904 AN33 BAT54 ZL2006 usb ferrite fb1
Contextual Info: ZL2006 NS ES IG W D T E R N A R P D FO E M EN T E D EN LA C O M M ED R EP R EC D 00 1 N T 6 E O L N Z OM M RE C Data Sheet December 15, 2010 FN6850.1 Adaptive Digital DC-DC Controller with Drivers and Current Sharing Description Features The ZL2006 is a digital DC-DC controller with

AN2035

Abstract: PIN CONFIGURATION 7411 2N3904 JESD22-A114E JESD78 TB379 ZL2008 AN2033 FN6859 MARKING SA transistor
Contextual Info: ZL2008 Features The ZL2008 is a digital DC/DC controller with integrated MOSFET drivers. Current sharing allows multiple devices to be connected in parallel to source loads with very high current demands. Adaptive performance optimization algorithms improve power conversion efficiency. Zilker

intersil fet

Abstract: 2N3904 AN13 BAT54 ZL2005 Tachometer circuit 2011
Contextual Info: ZL2005 NS E SI G D N EW A RT FO R M EN T P D E E D C M EN Data Sheet P LA C O M D ED R E 6 E R T N E NO ZL2 OM M R EC February 23, 2011 FN6848.2 Digital-DC Integrated Power Management and Conversion IC Description Features The ZL2005 is an innovative mixed-signal power

MJ13333

Abstract: MJ13330 1N4934 1N4937 MJ13331 MJE200 MJE210
Contextual Info: MOTOROLA Order this document by MJ13333/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ13333  Data Sheet SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERE NPN SILICON POWER TRANSISTORS 400–500 VOLTS 175 WATTS The MJ13333 transistor is designed for high voltage, high–speed, power switching

buv48 equivalent

Abstract: 2n3763 motorola BUV48 1N4934 2N3763 2N6339 2N6438 BUV48A MM3735 MR854
Contextual Info: MOTOROLA Order this document by BUV48/D SEMICONDUCTOR TECHNICAL DATA BUV48 BUV48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 150 WATTS The BUV48/BUV48A transistors are designed for high–voltage, high–speed, power

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

equivalent mje13005

Abstract: transistor 2N222 mje13005-5 2n222 TRANSISTOR 1N493 1N4933 2N222 2N2905 MJE13005 MJE13005G
Contextual Info: MJE13005 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications

15Z1

Abstract: motor jun tuo 2T825 LM 3177 switching reg stepping motor EM 58b d70433gd d70433 uPD70433 PD70433 TFK 601
Contextual Info: DATA SHEET N E MOS INTEGRATED CIRCUIT C ¿ ¿ P D 7 4 3 3 V55PI 16-BIT MICROPROCESSOR DESCRIPTION The ¿iPD70433 V55P0 is a m icroprocessor in which a 16-bit CPU, RAM, serial interface, parallel interface, A/D converter, tim ers; DMA controller, interrupt controller, etc., are integrated